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LV8012T

LV8012T

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    LV8012T - Forward/Reverse Motor Driver - Sanyo Semicon Device

  • 数据手册
  • 价格&库存
LV8012T 数据手册
Ordering number : EN7190A LV8012T Overview Bi-CMOS LSI Forward/Reverse Motor Driver LV8012T is a 2ch forward/reverse motor driver IC using D-MOS FET for output stage. As MOS circuit is used, it supports the PWM input. Its features are that the on resistance (0.75Ω typ) and current dissipation are low. It also provides protection functions such as heat protection circuit and reduced voltage detection and is optimal for the motors that need high-current. Functions • 2ch forward/reverse motor driver • Possible to respond to 3V control voltage and 6V motor voltage device • Low power consumption • Low-temperature resistance 1.2Ω • Built-in charge pump circuit • Built-in low voltage reset and thermal shutdown circuit • Four mode function forward/reverse, brake, stop. • Compact TSSOP-24 package Specifications Absolute Maximum Ratings at Ta = 25°C, SGND = PGND = 0V Parameter Supply voltage (For load) Supply voltage (For control) Output current Input voltage Allowable power dissipation Operating temperature Storage temperature * : Mounted on a substrate : Symbol VM max VCC max IO max VIN max Pd Topr Tstg 30×50×1.6mm3, glass epoxy board * Mounted on a substrate t ≤ 100ms Conditions Ratings -0.5 to 7.5 -0.5 to 6.0 1.4 -0.5 to VCC+0.5 800 -20 to +75 -55 to +150 Unit V V A V mW °C °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. http://semicon.sanyo.com/en/network 80107 MS 20060419-S00003 / 41107 TI PC B8-6194 No.7190-1/6 LV8012T Allowable Operating Ratings at Ta = 25°C, SGND = PGND = 0V Parameter Supply voltage (VM Pin) Supply voltage (VCC Pin) Input signal voltage Input signal frequenc Capacitor for charge pump Symbol VM VCC VIN f max C1, C2, C3 Conditions Ratings 2.0 to 7.0 2.7 to 5.5 0 to VCC 100 0.001 to 0.1 V kHz µF Unit V Electrical Characteristics at Ta = 25°C, VCC = VM = 5.0V, SGND = PGND = 0V, unless especially specified. Parameter Supply current for load at standby Supply current for control at standby Current drain during operation H-level input voltage L-level input voltage H-level input current (IN1, IN2, IN3, IN4) L-level input current (IN1, IN2, IN3, IN4) Pull-down resistance (EN1, 2) Output ON resistance Charge pump voltage Low-voltage detection operation voltage Thermal shutdown operation temperature Charge pump capacity (IG = 500µA) IG current dissipation (Fin = 20kHz) Charge pump start time Output block Turn on time Turn off time IG TVG TPLH TPHL CVG = 0.1µF 10 11 12 12 0.2 0.2 350 1.0 0.4 0.4 µA ms µs µs VGLOAD 9 8 9 V TTSD 8 180 °C RUP RON VG VCS Sum of ON resistances at top and bottom 6 7 8.5 2.15 2.30 10.5 2.45 V V 5 100 200 0.75 400 1.2 kΩ Ω IIL 4 -1.0 µA IC1 VIH VIL IIH Symbol IMO ICO EN = 0V EN = 0V, IN1 = IN2 = IN3 = IN4 = 0V EN = 5V, VG at no load 2.7V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 4 3 0.6×VCC 0 0.7 1.2 VCC 0.2×VCC 1.0 mA V V µA Conditions Remarks min 1 2 Ratings typ max 1.0 1.0 µA µA Unit Remarks 1. It shows current dissipation of VM pin in output OFF state. 2. It shows current dissipation of VCC pin in stand-by state. (The standard current depends on EN pin pull-down resistance.) 3. It shows current dissipation of VCC pin in state of EN = 5V (stand-by), including current dissipation of VG pin. 4. For IN1, IN2, IN3 and IN4 pins, no pull-down and pull-up resistance is needed. (High impedance pin) 5. It shows sum of upper and lower saturation voltages of OUT pin. 6. It controls charge-pump oscillation and makes specified voltage. 7. When low voltage is detected, the lower output is turned OFF. 8. When thermal protection circuit is activated, the lower output is turned OFF. When the heat temperature is fallen, it is turned ON again. 9. IG (VG pin load current) = 500µA 10. It shows VG pin current dissipation in state of PWM input for IN pin. 11. It specifies start-up time from 10% to 90% when VG is in non-load state (when setting the capacitor between VG and GND to 0.1µF and VCC is 5V). 12. It specifies 10% to 90% for start-up and 90% to 10% for shut-down. No.7190-2/6 LV8012T Package Dimensions unit : mm (typ) 3260A 1000 Pd max -- Ta Specified Board: 30×50×1.6mm3 glass epoxy board. 6.5 24 13 Allowable power dissipation, Pd max -- mW 800 4.4 6.4 600 480 400 1 0.5 (0.5) 0.22 12 0.15 0.5 200 (1.0) 1.2max 0 -20 0 20 40 60 75 80 100 0.08 Ambient temperature, Ta -- °C SANYO : TSSOP24(225mil) Pin Assignment EXTRA SGND EN1 IN1 IN2 IN3 IN4 VCC C2H C1H C2L C1L 24 23 22 21 20 19 18 17 16 15 14 13 LV8012T 1 EN1 2 VM 3 NC 4 PGND 5 OUT4 6 OUT3 7 OUT2 8 OUT1 9 PGND 10 NC 11 VM 12 VG Top view No.7190-3/6 LV8012T Block Diagram CH2 16 OSC,CHARGE_PUMP CL2 17 CH1 14 CL1 15 VCC 13 EN1 1 EN2 24 LEVEL SHIFT CMOS LOGIC H BRIDGE2 Low-voltage thermal protection 12 VG 11 VM 8 OUT1 H BRIDGE1 7 OUT2 9 PGND IN1 23 IN2 22 IN3 21 IN4 20 EXTRA 19 2 VM 6 OUT3 5 OUT4 4 PGND 18 SGND Truth table EXTRA L EN1 (EN2) H IN1 (IN3) H H L L L H H H L L IN2 (IN4) H L H L OUT1 (OUT3) Z L H L L L H L OUT2 (OUT4) Z H L L L H L L OFF ON Circuit of Charge Pump ON Mode Standby Reverse Forward Brake Standby Reverse Forward Brake - : Don’t care Z : High-Impedance * Current drain becomes zero in the standby mode. * The output side becomes OFF, with motor drive stopped, during voltage reduction and thermal protection. No.7190-4/6 LV8012T Pin Functions Pin No. 15 17 Pin name C1L C2L Function Voltage raising capacitor connection pin Equivalent Circuit VCC 14 16 C1H C2H Voltage raising capacitor connection pin VG C1H C2H 23 22 21 20 19 IN1 IN2 IN3 IN4 EXTRA Driver output changeover VCC 1 24 EN1 EN2 Logic enable pin TOUT output control pin (Pull-down resistor incorporated) VCC 200kΩ 8 7 6 5 OUT1 OUT2 OUT3 OUT4 PGND Driver output pin VM OUT OUT PGND 2 11 13 12 VM VM VCC VG Motor power supply (both terminals to be connected) Logic power supply Driver drive circuit power supply VG 0.1µF C2H 0.01µF C2L 18 SGND Logic GND 9 4 PGND PGND Driver GND (both terminals to be connected) . No.7190-5/6 LV8012T Sample Application Circuit 2.0 to 6.5V (1.0 to 4.0V) 8.5 to 10.5V 0.01µF 0.1µF C2H C2L VG 4.0 to 5.5V (2.7 to 3.6V) VM 0.01µF C1H C1L VCC EN1 EN2 IN1 OUT3 M OUT4 PGND VM EXTRA OUT1 OUT2 PGND *1 CPU IN2 IN3 IN4 SGND *1 : Connect a kickback absorption capacitor directly near IC. Coil kickback may cause rise of the voltage of VM line, and the voltage exceeding the maximum rating may be applied momentarily, resulting in deterioration or damage of IC. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice. PS No.7190-6/6
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