Ordering number : ENA1134
LV8014T
Overview
Bi-CMOS LSI
Forward/Reverse Motor Driver
LV8014T is a 2ch forward/reverse motor driver IC using D-MOS FET for output stage. As MOS circuit is used, it supports the PWM input. Its features are that the on resistance (0.75Ω typ) and current dissipation are low. It also provides protection functions such as heat protection circuit and reduced voltage detection and is optimal for the motors that need high-current.
Functions
• 2ch forward/reverse motor driver • Possible to respond to 3V control voltage and 6V motor voltage device • Low power consumption • Low-temperature resistance 1.2Ω • Built-in charge pump circuit • Built-in low voltage reset and thermal shutdown circuit • Four mode function forward/reverse, brake, stop. • Compact TSSOP-24 package
Specifications
Absolute Maximum Ratings at Ta = 25°C, SGND = PGND = 0V
Parameter Supply voltage (For load) Supply voltage (For control) Output current Output peak current Input voltage Allowable dissipation Operating temperature Storage temperature * : Mounted on a substrate : Symbol VM1, 2 max VCC max IO max IO max2 VIN max Pd max Topr Tstg 30×50×1.6mm3, glass epoxy board * Mounted on a substrate t ≤ 100ms t ≤ 10ms Conditions Ratings -0.5 to 7.5 -0.5 to 6.0 1.4 2.5 -0.5 to VCC+0.5 800 -20 to +75 -55 to +150 Unit V V A A V mW °C °C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment.
31208 TI IM B8-9014 No. A1134-1/6
LV8014T
Allowable Operating Ratings at Ta = 25°C, SGND = PGND = 0V
Parameter Supply voltage (VM Pin) Supply voltage (VCC Pin) Input signal voltage Input signal frequenc Capacitor for charge pump Symbol VM VCC VIN f max C1, C2, C3 Conditions Ratings 2.0 to 7.0 2.7 to 5.5 0 to VCC 100 0.001 to 0.1 Unit V V V kHz μF
Electrical Characteristics at Ta = 25°C, VCC = VM1 = VM2 = 5.0V, SGND = PGND = 0V, unless especially specified.
Parameter Supply current for load at standby Supply current for control at standby Current drain during operation H-level input voltage L-level input voltage H-level input current (IN1, IN2, IN3, IN4) L-level input current (IN1, IN2, IN3, IN4) Pull-down resistance (EN1, 2) RUP 100 200 400 kΩ IIL 4 -1.0 μA IC1 VIH VIL IIH Symbol IMO ICO EN = 0V EN = 0V, IN1 = IN2 = IN3 = IN4 = 0V EN = 5V, VG at no load 2.7V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 4 3 0.6×VCC 0 0.7 1.2 VCC 0.2×VCC 1.0 mA V V μA Conditions Remarks min 1 2 Ratings typ max 1.0 1.0 μA μA Unit
Ta = 25°C, VCC = VM = 5.0V, SGND = PGND = 0V
Parameter Output ON resistance Charge pump voltage Low-voltage detection operation voltage Thermal shutdown operation temperature Charge pump capacity (IG = 500μA) IG current dissipation (Fin = 20kHz) Charge pump start time Output block Turn on time Turn off time IG TVG TPLH TPHL CVG = 0.1μF 10 11 12 12 0.2 0.2 350 1.0 0.4 0.4 μA ms μs μs VGLOAD 9 8 9 V Tth 8 180 °C Symbol RON VG VCS Conditions Sum of ON resistances at top and bottom 6 7 8.5 2.15 2.30 10.5 2.45 V V Remarks min 5 Ratings typ 0.75 max 1.2 Ω Unit
Remarks 1. It shows current dissipation of VM1, VM2 pin in output OFF state. 2. It shows current dissipation of VCC pin in stand-by state. (The standard current depends on EN pin pull-down resistance.) 3. It shows current dissipation of VCC pin in state of EN = 5V (stand-by), including current dissipation of VG pin. 4. For IN1, IN2, IN3 and IN4 pins, no pull-down and pull-up resistance is needed. (High impedance pin) 5. It shows sum of upper and lower saturation voltages of OUT pin. 6. It controls charge-pump oscillation and makes specified voltage. 7. When low voltage is detected, the lower output is turned OFF. 8. When thermal protection circuit is activated, the lower output is turned OFF. When the heat temperature is fallen, it is turned ON again. 9. IG (VG pin load current) = 500μA 10. It shows VG pin current dissipation in state of PWM input for IN pin. 11. It specifies start-up time from 10% to 90% when VG is in non-load state (when setting the capacitor between VG and GND to 0.1μF and VCC is 5V). 12. It specifies 10% to 90% for start-up and 90% to 10% for shut-down.
No. A1134-2/6
LV8014T
Package Dimensions
unit : mm (typ) 3260A
1000
Pd max - Ta
Specified Board: 30×50×1.6mm3 glass epoxy board.
6.5 24 13
Allowable power dissipation, Pd max - mW
800
4.4
6.4
600 480 400
1 0.5 (0.5) 0.22
12
0.15
1.2max
0.5
200
(1.0)
0.08
0 -20
0
20
40
60
75 80
100
SANYO : TSSOP24(225mil)
Ambient temperature, Ta - °C
Pin Assignment
EXTRA SGND VCC
13 12 Top view
C2H
24
23
22
21
20
19
18
17
16
15
14
LV8014T
1
2
3
4
5
6
7
8
9
10
11
VM2
PGND
PGND
VM1
EN1
C1H
EN2
C2L
C1L
IN1
IN2
IN3
IN4
OUT4
OUT3
OUT2
OUT1
VG
NC
NC
No. A1134-3/6
LV8014T
Block Diagram
C2H 16 OSC,CHARGE_PUMP C2L 17 C1H 14 C1L 15 VCC 13 EN1 1 EN2 24 LEVEL SHIFT CMOS LOGIC H BRIDGE2
12 VG
Low-voltage thermal protection
11 VM1
8 OUT1 H BRIDGE1
7 OUT2
4 P-GND
IN1 23 IN2 22 IN3 21 IN4 20 EXTRA 19
2 VM2
6 OUT3
5 OUT4
9 P-GND
18 SGND
Truth table
EXTRA L EN1 (EN2) H IN1 (IN3) H H L L L H H H L L IN2 (IN4) H L H L OUT1 (OUT3) Z L H L L L H L OUT2 (OUT4) Z H L L L H L L OFF ON Circuit of Charge Pump ON Mode Standby Reverse Forward Brake Standby Reverse Forward Brake - : Don’t care Z : High-Impedance * Current drain becomes zero in the standby mode. * The output side becomes OFF, with motor drive stopped, during voltage reduction and thermal protection.
No. A1134-4/6
LV8014T
Pin Functions
Pin No. 15 17 Pin name C1L C2L Function Voltage raising capacitor connection pin Equivalent Circuit
VCC
14 16
C1H C2H
Voltage raising capacitor connection pin
VG
C1H C2H
23 22 21 20 19 IN1 IN2 IN3 IN4 EXTRA Driver output changeover
VCC
1 24
EN1 EN2
Logic enable pin TOUT output control pin (Pull-down resistor incorporated)
VCC
200kΩ
8 7 6 5 OUT1 OUT2 OUT3 OUT4 PGND Driver output pin
VM
OUT
OUT
PGND
2 11 13 12 VM2 VM1 VCC VG Logic power supply Driver drive circuit power supply Motor power supply
VG 0.1μF
C2H 0.01μF C2L
18
SGND
Logic GND
9 4
PGND PGND
Driver GND (both terminals to be connected) .
No. A1134-5/6
LV8014T
Sample Application Circuit
1.0 to 6.5V 8.5 to 10.5V
0.01μF 0.1μF
C2H C2L
VG
2.7 to 5.5V
0.01μF
VM1 C1H C1L VCC EN1 EN2 IN1 OUT3 M OUT4 PGND VM2 *1 SGND EXTRA OUT1 OUT2 PGND *1
CPU
IN2 IN3 IN4
*1 : Connect a kickback absorption capacitor directly near IC. Coil kickback may cause rise of the voltage of VM line, and the voltage exceeding the maximum rating may be applied momentarily, resulting in deterioration or damage of IC.
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This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice.
PS No. A1134-6/6