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LV8018W

LV8018W

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    LV8018W - 4ch PWM H-bridge Driver - Sanyo Semicon Device

  • 数据手册
  • 价格&库存
LV8018W 数据手册
Ordering number : EN6982B Bi-CMOS IC LV8018W Overview For Portable MD 4ch PWM H-bridge Driver The LV8018W is 4-chnnel PWM-drive H-bridge driver for portable MD. Functions • 4-chnnel PWM-drive H-bridge driver. • Built-in charge pump circuit. • Built-in thermal shutdown circuit. Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Supply voltage (Output block ) Supply voltage (Control block ) Predrive voltage (gate voltage) Maximum output current (ch1-ch4) Allowable power dissipation Operating temperature Storage temperature Symbol VBAT max VCC max VG max IO max Pd max Topr Tstg Independent IC Conditions Ratings 7 7 9.5 500 0.5 -20 to +85 -55 to +150 Unit V V V mA W °C °C Operating Ratings at Ta = 25°C Parameter Recommended supply voltage (Output block ) Recommended supply voltage (Control block ) Predrive voltage (gate voltage) Symbol VBAT max VCC max VG max Conditions Ratings 7 7 9.5 Unit V V V Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. N1908 MS / 41107 TI PC B8-5701 No.6982-1/7 LV8018W Electrical Characteristics at Ta = 25°C, VCC1, 2 = 3.0V, VBAT = 3.0V Parameter Standby current dissipation Current dissipation Symbol ICCO ICC (A) ICC (B) Predrive block current dissipation S/S bias current S/S input “High” voltage S/S input “Low” voltage VBATT/2 set voltage accuracy VBATT/2 limit voltage VBATT monitor input resistance Logic input bias current Logic input “High” voltage Logic input “Low” voltage Booster circuit Output voltage VGO VG Output oscillation-frequency Clamp voltage FOSC VGLIM VGOFF = “L”, VCC1, 2 = 3.6V No load IGOUT = -1mA 8.5 6.7 100 9.2 8.8 7.2 115 9.5 130 9.8 V V kHz V IGO IG ISS VSSH VSSL ∆VMON VMONLIM RMON ILG VLGH VLGL VCC2-0.6 0 VCC1-0.2 35 VCC1 50 75 ±1 VCC2 0.6 VGOFF = “L” VGOFF = “H” VG = 7V, each logic input = “L” VG = 7, input frequency 88kHz S/S = 3.0V VCC2-0.6 0 1.4 1.0 70 1.0 80 Conditions min Ratings typ max 10 1.9 1.5 105 1.5 120 VCC1 0.6 ±10 µA mA mA µA mA µA V V % V kΩ µA V V Unit MOS driver output stage (VG = 7V) Output ON resistance Output propagation delay time Ron1, 2, 3, 4 TRISE YFALL Minimum pulse width TSD circuit Operating temperature Hysteresis width TSD ∆TSD * * 150 180 30 °C °C Tmin IO = 100mA, sum of upper and lower outputs * * Output pulse width ≥ (2/3) Tmin * 200 1.3 0.2 0.1 2.0 1.0 0.7 Ω µs µs ns * : “Design” indicates the design target, not the measured value. Package Dimensions unit : mm (typ) 3163B 0.6 Pd max -- Ta Independent IC 36 37 25 24 0.5 9.0 7.0 Allowable power dissipation, Pd max -- W 0.5 0.4 0.3 0.26 0.2 48 1 0.5 (0.75) 12 0.18 13 7.0 9.0 0.1 0.15 0 -20 0 Ambient temperature, Ta -- °C 20 40 60 80 85 100 1.7max 0.1 (1.5) SANYO : SQFP48(7X7) No.6982-2/7 LV8018W Pin Assignment 1/2VBATT MON VGOFF VBATT VCC2 IN4R 36 IN4F 37 PGND6 38 OUT4F 39 BAT4 40 OUT4R 41 PGND5 42 OUT3F 43 BAT3 44 OUT3R 45 PGND4 46 NC 47 NC 48 1 MUTE 35 34 33 32 31 30 29 28 27 26 25 24 IN2F 23 PGND3 22 OUT2F 21 BAT2 20 OUT2R IN2R GND CP4 CP3 CP2 CP1 S/S LV8018W Top view 19 PGND2 18 OUT1F 17 BAT1 16 OUT1R 15 PGND1 14 IN1F 13 IN1R 2 IN3+ 3 NC 4 NC 5 NC 6 VG 7 VCC1 8 IN3− 9 NC 10 NC 11 NC 12 MUTE1 OUT1, 2, 4F L H L L Z Z Truth table Ch1, 2, 4 (for focus, tracking, and traverse) S/S H H H H H L × : Don’t Care, Z : Open MUTE1 H H H H L × IN1, 2, 4F L H L H × × IN1, 2, 4R L L H H × × OUT1, 2, 4R L L H L Z Z Ch3 (for spindle) S/S H H H H H L × : Don’t Care, Z : Open MUTE H H H H L × IN3+ L H L H × × IN3L L H H × × OUT3F L H L L Z Z OUT3R L L L H Z Z No.6982-3/7 VCC2 17 Control logic Predriver CH1 (H bridge) 30 BAT1 OUT1F IN1F 13 Focus OUT1R PGND1 PGND2 18 16 15 19 Block Diagram IN1R 14 VCC1 7 GND IN2F 24 IN2R 25 Control logic Predriver CH2 (H bridge) 29 21 22 20 23 BAT2 OUT2F Tracking OUT2R PGND3 IN3− 8 IN3+ 2 Control logic Predriver CH3 (H bridge) 44 43 45 46 42 40 BAT3 OUT3F Spindle OUT3R PGND4 PGND5 LV8018W MUTE 1 MUTE circuit MUTE1 12 MUTE1 circuit IN4F 37 IN4R 36 Vref TSD BAT4 Control logic Predriver CH4 (H bridge) 39 41 38 6 OUT4F Traverse OUT4R PGND6 * Constants of external parts are for reference and not guaranteed S/S 28 VGOFF 35 18 19 CP1 CP2 0.1µF Chip selector Internal oscillator Charge pump VG detection 20 21 CP3 CP4 0.1µF BATT MONITOR VG 1µF 27 VBATT 26 1/2VBATT MON No.6982-4/7 LV8018W Pin Functions Pin No. 1 Pin neme MUTE Channel 3 MUTE pin. L for MUTE ON. Function Equivalent Circuit VCC2 VCC2 1 2 8 IN3+ IN3- Input pins, each on the forward side and reverse side of Channel 3. (Digital input) VCC2 VCC2 2 8 6 VG Pin to provide the supply voltage to the predrive. With VGOFF = “L”, the output voltage of booster circuit is output to this pin. This voltage acts directly as the supply voltage of predrive. 7 12 VCC1 MUTE1 Pin to provide the supply voltage of analog signal system. MUTE pin common to Channel 1, 2, and 4. L for MUTE ON. VCC2 VCC2 12 14 13 IN1F IN1R Input pins, each on the forward side and reverse sides of Channel 1. (Digital input) VCC2 VCC2 13 14 18 16 17 15 19 OUT1F OUT1R BAT1 PGND1 PGND2 OUT1F : Channel 1 forward side output pin. OUT1R : Channel 1 reverse side output pin. BAT1 : Channel 1 output power pin. PGND1, 2 : Power GND pin. 17 16 18 15 22 20 21 23 OUT2F OUT2R BAT2 PGND3 OUT2F : Channel 2 forward side output pin. OUT2R : Channel 2 reverse side output pin. BAT2 : Channel 2 output power pin. PGND3 : Power GND pin. 19 21 Transistor under a neighboring H 22 20 23 24 25 IN2F IN2R Input pins, each on the forward side and reverse side of Channel 2. (Digital input) VCC2 19 Transistor under a neighboring H VCC2 24 25 Continued on next page. No.6982-5/7 LV8018W Continued from preceding page. Pin No. 27 26 Pin neme VBATT 1/2VBATT MON Function Output power connection pin Pin to monitor 1/2 of output power supply. Used to monitor the output power supply at the digital servo and to correct the voltage dependence of servo. VCC1 Equivalent Circuit 27 26 28 S/S Start/stop pin. H for start and L for stop. VCC1 28 29 30 31 32 33 34 GND VCC2 CP1 CP2 CP3 CP4 Signal GND pin. Pin to provide supply voltage of the logic signal system. CP1, 3 : Switching pins of booster circuit CP2, 4 : Pins to which the rectifier transistor of booster circuit is connected VCC2 32 34 6 31 33 VCC2 VCC2 35 VGOFF Booster circuit ON/OFF selector pin. L for booster circuit ON H for booster circuit OFF 35 37 36 IN4F IN4R Input pins, each on the forward side and reverse side of Channel 4. VCC2 VCC2 36 37 39 41 40 42 38 OUT4F OUT4R BAT4 PGND5 PGND6 OUT4F : Channel 4 forward side output pin. OUT4R : Channel 4 reverse side output pin. BAT4 : Channel 4 output power pin. PGND5, 6 : Power GND pin. 40 39 41 38 43 45 44 46 OUT3F OUT3R BAT3 PGND4 OUT3F : Channel 3 forward side output pin. OUT3R : Channel 3 reverse side output pin. BAT3 : Channel 3 output power pin. PGND4 : Power GND pin. 42 44 Transistor under a neighboring H 45 43 46 42 Transistor under a neighboring H No.6982-6/7 LV8018W Cautions for use 1. Apply power in the order from VCC to each BAT. When the external power supply is used for VG, apply power in the order from VCC, through VG, to each BAT. For each BAT, turn ON power supply after complete rising of VCC and VG voltages. 2. Each power supply must be stabilized by inserting a capacitor to GND to prevent entry of ripple and noise. In particular, the capacitor of sufficient capacitance must be used for the output because the large current flows here. The capacitor to be inserted in each power supply should be installed as near as possible to the IC pin. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2008. Specifications and information herein are subject to change without notice. PS No.6982-7/7
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