MCH3209

Ordering number : EN7129B MCH3109 / MCH3209 SANYO Semiconductors DATA SHEET MCH3109 / MCH3209 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). High allowable power dissipation. Specifications ( ) : MCH3109 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings (--30)40 (--)30 (--)5 (--)3 (--)5 (--)600 0.8 150 --55 to +150 Unit V V V A A mA W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz Ratings min typ max (--)0.1 (--)0.1 200 (380)450 (25)20 560 MHz pF Unit µA µA Marking : MCH3109 : AJ / MCH3209 : CJ Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 42806 MS IM TB-00002274 / D1504EA TS IM TB-00000344 / N3001 TS IM TA-3372, 3373 No.7129-1/5 MCH3109 / MCH3209 Continued from preceding page. Parameter Symbol VCE(sat)1 VCE(sat)2 Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--)1.5A, IB=(--)30mA IC=(--)1.5A, IB=(--)75mA IC=(--)1.5A, IB=(--)30mA IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (-30)40 (-)30 (--)5 (50)30 (270)300 (25)15 Ratings min typ (--155) 120 (--)105 (--)0.83 max (--230) 180 (--)155 (--)1.2 Unit mV mV mV V V V V ns ns ns Collector-to-Emitter Saturation Voltage Package Dimensions unit : mm 7019A-004 2.0 0.15 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT 0 to 0.02 IB1 OUTPUT IB2 VR 50Ω RB 0.25 3 2.1 1.6 RL 1 0.25 0.65 2 0.3 + 100µF VBE= --5V + 470µF VCC=12V IC=20IB1= --20IB2=500mA (For PNP, the polarity is reversed.) 0.85 0.07 1 : Base 2 : Emitter 3 : Collector SANYO : MCPH3 A mA --40m --3 0 0 --2 A --10m Collector Current, IC -- A Collector Current, IC -- A --1.6 --8mA 1.6 20m mA A MCH3109 40mA 50mA 30mA --2.0 IC -- VCE 2.0 IC -- VCE 10 mA 8m A 6mA --50m A --6mA --4mA 4mA --1.2 1.2 --0.8 0.8 2mA --2mA --0.4 0.4 0 0 --200 --400 --600 IB=0mA --800 --1000 IT03993 0 0 200 400 600 MCH3209 IB=0mA 800 1000 IT03994 Collector-to-Emitter Voltage, VCE -- mV Collector-to-Emitter Voltage, VCE -- mV No.7129-2/5 MCH3109 / MCH3209 --3.5 IC -- VBE MCH3109 VCE= --2V 3.5 IC -- VBE MCH3209 VCE=2V --3.0 3.0 Collector Current, IC -- A --2.5 Collector Current, IC -- A 2.5 --2.0 2.0 Ta=75°C 25°C --25°C --1.5 1.5 --1.0 1.0 --0.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT03995 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT03996 Base-to-Emitter Voltage, VBE -- V 1000 7 5 Base-to-Emitter Voltage, VBE -- V 1000 hFE -- IC Ta=75°C --25°C 25°C MCH3109 VCE= --2V hFE -- IC MCH3209 VCE=2V 7 5 Ta=75°C --25°C DC Current Gain, hFE DC Current Gain, hFE 3 2 3 2 25°C 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 1000 7 5 7 --10 IT03997 10 0.01 2 3 5 7 0.1 2 3 Ta=75°C 25°C --25°C 5 7 1.0 2 3 Collector Current, IC -- A 1000 5 7 10 IT03998 f T -- IC Gain-Bandwidth Product, f T -- MHz MCH3109 VCE= --10V f T -- IC MCH3209 VCE=10V 7 5 3 2 Gain-Bandwidth Product, f T -- MHz 5 3 2 100 7 5 3 2 100 7 5 3 2 10 --10 2 3 5 7 --100 2 3 5 7 --1000 2 3 10 0.01 2 3 5 7 100 2 3 5 7 1000 2 3 Collector Current, IC -- mA 2 IT03999 2 Cob -- VCB Collector Current, IC -- mA IT04000 Cob -- VCB MCH3209 f=1MHz MCH3109 f=1MHz Output Capacitance, Cob -- pF 100 7 5 Output Capacitance, Cob -- pF 2 3 5 7 2 3 5 IT04001 100 7 5 3 3 2 2 10 --1.0 --10 10 1.0 2 3 5 7 10 2 3 5 IT04002 Collector-to-Base Voltage, VCB -- V Collector-to-Base Voltage, VCB -- V No.7129-3/5 MCH3109 / MCH3209 --1.0 7 5 VCE(sat) -- IC MCH3109 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 2 3 VCE(sat) -- IC MCH3209 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT04003 C 75° Ta= °C 5°C 2 --25 C 75° Ta= °C --25 25 °C --0.001 --0.01 0.001 0.01 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A --10 7 5 Collector Current, IC -- A 10 7 5 5 7 10 IT04004 VCE(sat) -- IC VCE(sat) -- IC MCH3209 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 3 5 7 --0.1 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V MCH3109 IC / IB=50 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 3 5 7 0.1 2 C 75° Ta= °C 5°C --25 2 C 75° Ta= °C 5°C --25 2 --0.01 --0.01 2 3 5 7 --1.0 2 3 Collector Current, IC -- A --10 7 5 7 --10 IT04005 0.01 0.01 3 5 7 1.0 2 3 Collector Current, IC -- A 10 5 7 10 IT04006 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V MCH3109 IC / IB=50 VBE(sat) -- IC MCH3209 IC / IB=50 7 5 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 --1.0 7 5 3 2 Ta= --25°C 75°C 25°C 1.0 7 5 3 2 Ta= --25°C 75°C 25°C --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 10 7 5 5 7 --10 IT04007 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1.0 5 7 10 IT04008 ASO ICP=5A IC=3A 10 PC -- Ta 10 Collector Dissipation, PC -- W Collector Current, IC -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 1m ms 0µ s s 0.8 0 50 µs M ou DC 10 op era nt 0m ed s 0.6 on ac tio er n am ic 0.4 bo ar d( 0.01 0.1 MCH3109 / MCH3209 Ta=25°C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board (600mm2!0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 60 0m 0.2 m2 !0 .8m m ) 160 0 0 20 40 60 80 100 120 140 IT04010 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- °C IT03981 No.7129-4/5 MCH3109 / MCH3209 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.7129-5/5