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MCH3217

MCH3217

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    MCH3217 - NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications - Sanyo Semicon Dev...

  • 数据手册
  • 价格&库存
MCH3217 数据手册
Ordering number : ENN8183 MCH3217 MCH3217 Applications • NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8m) Conditions Ratings 15 15 6 1.5 3 300 0.7 150 --55 to +150 Unit V V V A A mA W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=12V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=300mA VCB=10V, f=1MHz 250 430 9.5 Conditions Ratings min typ max 0.1 0.1 400 MHz pF Unit µA µA Marking : CH Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12505EA TS IM TB-00001032 No.8183-1/4 MCH3217 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=750mA, IB=15mA IC=750mA, IB=15mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 15 15 6 30 160 15 Ratings min typ 80 0.83 max 120 1.2 Unit mV V V V V ns ns ns Package Dimensions unit : mm 2194A 0.25 0.3 3 2.1 1.6 Switching Time Test Circuit IB1 OUTPUT IB2 VR 50Ω RB PW=20µs D.C.≤1% 0.15 INPUT RL + + 470µF VCC=5V 0.25 0.65 2.0 (Bottom view) 0.07 2 1 220µF VBE= --5V 3 1 : Base 2 : Emitter 3 : Collector 1 2 (Top view) IC=20IB1= --20IB2=750mA 0.85 SANYO : MCPH3 1.5 IC -- VCE 30mA 1.2 Collector Current, IC -- A 2 4mA Collector Current, IC -- A 40mA 15m A 0m A 10 mA 8mA 6mA 5mA 1.5 IC -- VBE VCE=2V 1.0 0.9 3mA 50mA Ta= --2 5° C 0.5 0.6 2mA 25°C 0.3 1mA 0 0 0.2 0.4 0.6 0.8 IB=0 1.0 IT09014 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V 75°C IT09015 No.8183-2/4 MCH3217 1000 hFE -- IC VCE=2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 VCE(sat) -- IC IC / IB=20 7 5 0.1 7 5 3 2 DC Current Gain, hFE Ta=75°C 3 25°C --25°C = Ta °C 75 5°C 25 °C 2 --2 0.01 7 5 3 0.01 100 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 3 2 IT09016 VCE(sat) -- IC Collector Current, IC -- A 3 IT09017 VBE(sat) -- IC IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=50 0.1 7 5 1.0 Ta= --25°C 25°C = Ta 3 2 75 °C 7 --2 5°C ° 25 C 75°C 5 3 2 0.01 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1000 IT09018 5 f T -- IC Collector Current, IC -- A IT09019 Cob -- VCB VCE=10V Gain-Bandwidth Product, f T -- MHz 7 f=1MHz Output Capacitance, Cob -- pF 5 3 3 2 2 10 100 7 5 0.01 7 5 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- A 5 3 2 IT09020 ASO Collector-to-Base Voltage, VCB -- V 0.8 IT09021 PC -- Ta ICP=3A IC=1.5A 10µs Collector Dissipation, PC -- W 10 10 DC op ms 100µs 0.7 50 s 0µ Collector Current, IC -- A M 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 7 5 3 2 0.1 7 5 3 2 0m ou s n nt ed on 1m s era tio ac er am ic bo ar d (6 00 m m2 ! 0.01 0.1 Ta=25°C Single pulse Mounted on a ceramic board (600mm2!0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 0. 8m m ) 160 0 20 Collector-to-Emitter Voltage, VCE -- V IT09022 Ambient Temperature, Ta -- °C 40 60 80 100 120 140 IT09004 No.8183-3/4 MCH3217 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. PS No.8183-4/4
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