MCH3316

Ordering number : ENN8019 MCH3316 P-Channel Silicon MOSFET MCH3316 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings Unit --60 ±20 --1.2 --4.8 1 150 --55 to +150 V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0 VDS=--60V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=- 1mA VDS=--10V, ID=--0.6A ID=--0.6A, VGS=--10V ID=--0.3A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min typ max Unit V --60 --1 ±10 µA µA V S mΩ mΩ pF pF pF ns ns ns ns --1.2 0.8 1.5 400 540 265 24 16 8 6 28 20 --2.6 530 750 Marking : JR Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1004 TS IM TB-00000245 No.8019-1/4 MCH3316 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--30V, VGS=--10V, ID=--1.2A VDS=--30V, VGS=--10V, ID=--1.2A VDS=--30V, VGS=--10V, ID=--1.2A IS=--1.2A, VGS=0 Ratings min typ 6.4 1.0 1.0 max Unit nC nC nC --0.87 - 1.2 - V Package Dimensions unit : mm 2167A 0.25 0.3 3 0.15 Switching Time Test Circuit VIN 0V --10V VIN VDD= --30V 2.1 1.6 ID= --0.6A RL=50Ω 0.25 0.65 2.0 (Bottom view) 0.07 2 1 PW=10µs D.C.≤1% D VOUT G 3 MCH3316 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) P.G 50Ω S 0.85 SANYO : MCPH3 --1.2 ID -- VDS 0V --8.0V 0V --2.0 ID -- VGS VDS= --10V V --1.0 0 --3. --4 . V --1.8 --1.6 --10 . --6. 0 Drain Current, ID -- A Drain Current, ID -- A --0.8 --1.4 --1.2 --1.0 --0.8 --0.6 --0.2 --0.4 --0.2 Ta= 7 0 --0.5 --1.0 --1.5 --2.0 --2.5V 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 VGS= --2.0V --1.2 --1.4 --1.6 0 --2.5 25 °C --3.0 --25° C --0.6 5 °C --0.4 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V 1000 IT07456 1000 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT07457 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 900 800 700 600 500 400 300 200 0 --2 --4 --6 --8 --10 --12 --14 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID= --0.6A 900 800 700 600 500 400 300 200 100 --60 V --4 S= , VG 10V .3A = ---0 = V GS ID A, 0.6 = -ID --16 --18 --20 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT07690 Ambient Temperature, Ta -- °C IT07691 No.8019-2/4 MCH3316 5 yfs -- ID VDS= --10V 3 2 --1.0 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 3 Forward Current, IF -- A 2 ° 25 1.0 7 5 3 2 C 7 5 3 2 --0.1 = Ta --2 5° C 75 °C 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 --0.2 --0.4 Ta=7 5 7 5 °C 25°C --25° C --0.6 --0.8 --1.0 --1.2 IT07461 Drain Current, ID -- A 7 5 IT07460 7 5 3 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD= --30V VGS= --10V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 3 2 Ciss 2 tf 10 7 5 3 2 td(on) 100 7 5 3 2 tr Coss Crss 10 1.0 --0.1 2 3 5 7 --1.0 2 3 7 0 --5 --10 --15 --20 --25 --30 IT07463 Drain Current, ID -- A --10 IT07462 --10 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --30V ID= --1.2A --8 IDP= --4.8A