MCH3411

Ordering number : ENN7285 MCH3411 N-Channel Silicon MOSFET MCH3411 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2167A [MCH3411] 0.25 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 3 0.15 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.85 SANYO : MCPH3 Ratings 30 ±10 3 12 1 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=1A, VGS=2.5V Ratings min 30 1 ±10 0.4 3.5 5.0 69 84 90 118 1.3 typ max Unit V µA µA V S mΩ mΩ Marking : KL Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83002 TS IM TA-100052 No.7285-1/4 MCH3411 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0 Ratings min typ 270 38 23 10 30 42 52 3.7 0.7 0.5 0.86 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 4V 0V VIN PW=10µs D.C.≤1% ID=1.5A RL=10Ω VDD=15V D VOUT G MCH3411 P.G 50Ω S 25°C 3.0 ID -- VDS 4 4.5V .0V 2.5V 2.0V 5 ID -- VGS 25°C 75°C 1.5 V VDS=10V 2.5 4 Drain Current, ID -- A 2.0 Drain Current, ID -- A 10.0V 3 1.5 VGS=1.0V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.25 0.50 0.75 1.00 0 0 1.25 25°C 1.50 1.75 0.5 1 Ta= 7 1.0 5°C --25° C 2 Ta= -- 2.00 2.25 2.50 Drain-to-Source Voltage, VDS -- V 300 IT04632 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 150 IT04633 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 125 200 100 150 75 1.5A 100 V =2.5 , VGS 1.0A V I D= =4.0 , VGS 1.5A I D= ID=1.0A 50 50 25 0 0 2 4 6 8 10 12 IT04634 0 --60 --40 --20 0 20 40 60 80 100 120 140 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C IT04635 No.7285-2/4 MCH3411 Forward Transfer Admittance, yfs -- S 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 70.001 2 3 5 70.01 23 5 7 0.1 23 5 7 1.0 23 5 yfs -- ID VDS=10V 25 °C 10 7 5 3 2 IF -- VSD VGS=0 = Ta --2 C 5° °C 75 Forward Current, IF -- A 1.0 7 5 3 2 0.01 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 IT04637 0.001 Drain Current, ID -- A 100 7 IT04636 1000 7 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=15V VGS=4V Switching Time, SW Time -- ns 5 3 2 5 tf Ciss, Coss, Crss -- pF 3 2 100 7 5 tr 10 7 5 3 2 7 0.1 2 3 5 7 td(on) 3 2 10 1.0 2 3 5 0 5 10 15 20 25 30 IT04639 Drain Current, ID -- A 5 IT04638 3 2 10 7 5 VGS -- Qg Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V VDS=10V ID=3A 5° 25° C --25 C °C 0.1 7 5 3 2 Ta= 7 Ciss Coss Crss ASO IDP=12A ID=3A 4 Drain Current, ID -- A