MCH3415

Ordering number : ENN7995 MCH3415 MCH3415 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 60 ±20 1.5 6 0.9 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.75A ID=0.75A, VGS=10V ID=0.75A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 60 1 ±10 1.2 0.75 1.5 240 320 150 19 13 7 3 20 11 310 450 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : KQ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2504 TS IM TB-00000256 No.7995-1/4 MCH3415 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=30V, VGS=10V, ID=1.5A VDS=30V, VGS=10V, ID=1.5A VDS=30V, VGS=10V, ID=1.5A IS=1.5A, VGS=0 Ratings min typ 4.8 1.0 1.0 0.89 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2167A 0.25 Switching Time Test Circuit VIN VDD=30V 0.3 3 0.15 10V 0V VIN ID=0.75A RL=40Ω 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 PW=10µs D.C.≤1% D VOUT G 3 MCH3415 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) P.G 50Ω S 0.85 SANYO : MCPH3 1.5 ID -- VDS 8.0V 6.0V 3.0 ID -- VGS 2 25°C 5°C C Ta= 75 4.0 3.0V 2.5 1.2 10.0V Drain Current, ID -- A Drain Current, ID -- A 2.0 0.9 1.5 0.6 2.5V 0.3 °C 1.0 VGS=2.0V 0 0 0.3 0.6 0.9 1.2 1.5 IT07489 600 0 0 0.5 1.0 1.5 2.0 2.5 25° 0.5 --25 ° C 3.0 Ta= -3.5 Drain-to-Source Voltage, VDS -- V 600 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT07490 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 550 500 450 400 350 300 250 200 150 0 2 4 6 8 10 12 14 Ta=25°C ID=0.75A 550 500 450 400 350 300 250 200 150 100 --60 --40 --20 0 20 40 60 80 100 120 140 160 =0 ID .75 VG A, 4 S= V 0. I D= 75 G A, V 10 S= V 16 18 20 Gate-to-Source Voltage, VGS -- V IT07491 Ambient Temperature, Ta -- °C IT07492 No.7995-2/4 75° 4.0 VDS=10V V C MCH3415 5 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 7 5 3 2 IF -- VSD VGS=0 3 Forward Current, IF -- A 2 1.0 7 5 3 2 2 0.1 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0.01 0.4 0.6 Ta= 75° C 25 ° C --25 °C 0.8 C 5° -2 =°C Ta 75 1.0 7 5 3 °C 25 1.0 1.2 IT07494 Drain Current, ID -- A 5 3 IT07493 5 3 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 2 2 tf 10 7 5 3 2 Ciss, Coss, Crss -- pF Ciss 100 7 5 3 2 td(on) tr Coss Crss 1.0 0.1 VDD=30V VGS=10V 2 3 5 7 1.0 2 3 5 IT07495 10 7 0 5 10 15 20 25 30 IT07496 Drain Current, ID -- A 10 VGS -- Qg Drain-to-Source Voltage, VDS -- V 10 7 5 3 2 ASO Gate-to-Source Voltage, VGS -- V VDS=30V ID=1.5A Drain Current, ID -- A IDP=6A 1m 10