Ordering number : ENN8025
MCH3431
MCH3431
Features
• • •
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 30 ±12 3.5 14 1 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.8A ID=1.8A, VGS=4V ID=1A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 30 1 ±10 0.4 2.8 4.8 55 70 415 60 55 11 65 54 61 72 98 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns
Marking : ZG
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2504 TS IM TB-00000408 No.8025-1/4
MCH3431
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=4V, ID=3.5A VDS=10V, VGS=4V, ID=3.5A VDS=10V, VGS=4V, ID=3.5A IS=3.5A, VGS=0 Ratings min typ 5.1 0.95 1.4 0.87 1.2 max Unit nC nC nC V
Package Dimensions unit : mm 2167A
0.25
Switching Time Test Circuit
VIN
0.3 3 0.15
VDD=15V
4V 0V VIN ID=1.8A RL=8.3Ω VOUT
2.1
1.6
0.25
0.65 2.0
(Bottom view)
0.07
2
1
PW=10µs D.C.≤1%
D
G
3
1 : Gate 2 : Source 3 : Drain
1 2
(Top view)
P.G
50Ω
S
MCH3431
0.85
SANYO : MCPH3
3.5
ID -- VDS
4.0V
2.5V 2.0 V
3.5
ID -- VGS
VDS=10V
3.0
3.0
Drain Current, ID -- A
3.0V
2.5
Drain Current, ID -- A
1.5V
2.5
2.0
2.0
1.5
1.5
1.0
1.0
75 °C
0 0.2 0.4 0.6 0.8 1.0
25° C
Ta =
1.2
0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.5
VGS=1.0V
0.8 0.9 1.0
0 1.4 1.6 1.8
Drain-to-Source Voltage, VDS -- V
200
IT07566
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
120
--25 °C
IT07567
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
180 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 IT07641
100
80
60
V 1.0 4.0 I D= S= , VG V 1.8 I D=
VG A,
2. S=
5V
ID=1.8A 1.0A
40
20
0 --60
--10
40
90
140
190 IT07569
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
No.8025-2/4
MCH3431
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 2 3 5 7 0.1 23 5 7 1.0 23 5 7 10 IT07570
yfs -- ID
VDS=10V
Forward Transfer Admittance, yfs -- S
10 7 5 3 2
IF -- VSD
VGS=0
Forward Current, IF -- A
75 °C
0.1 7 5 3 2 0.01 7 5 3 2 0.3 0.4
0.001 0.2
0.5
0.6
25 °C -2 5
0.7 0.8
°C 25
Ta =
°C
= Ta
--
°C 25
75
°C
1.0 7 5 3 2
0.9
1.0
1.1
Drain Current, ID -- A
1000 7 5
SW Time -- ID
VDD=15V VGS=4V Ciss, Coss, Crss -- pF
1000 7 5 3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
IT07571
Switching Time, SW Time -- ns
3 2 100 7 5 3 2 10 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT07572
td(off) tf
100 7 5 3 2 0 2 4 6 8 10 12 14 16 18 20
tr
Coss
Crss
td(on)
Drain Current, ID -- A
4.5 4.0 3.5
Drain-to-Source Voltage, VDS -- V
3 2 10 7 5
IT07573
VGS -- Qg
VDS=10V ID=3.5A Drain Current, ID -- A
ASO
IDP=14A ID=3.5A