MCH3456

Ordering number : ENN8162 MCH3456 MCH3456 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 15 ±10 1.8 7.2 0.8 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=15V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 15 1 ±10 0.4 1.5 2.6 120 165 230 105 30 24 7.8 27 18 22 160 240 350 1.3 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns Marking : LH Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1504PE TS IM TB-00000382 No.8162-1/4 MCH3456 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=4V, ID=1.8A VDS=10V, VGS=4V, ID=1.8A VDS=10V, VGS=4V, ID=1.8A IS=1.8A, VGS=0 Ratings min typ 1.86 0.33 0.55 0.88 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2167A 0.25 Switching Time Test Circuit VIN 0.3 3 0.15 VDD=10V 4V 0V VIN ID=1A RL=10Ω VOUT 2.1 1.6 0.25 0.07 2 0.65 2.0 1 PW=10µs D.C.≤1% D G 3 (Bottom view) 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) P.G 50Ω S MCH3456 0.85 SANYO : MCPH3 1.6 ID -- VDS 6.0V 4. 0V 2.0 ID -- VGS °C Ta= --25 Ta= 75° C 0 0.2 0.4 0.6 0.8 1.0 1.2 V 3.0V 1.8 1.6 Drain Current, ID -- A 2.5 Drain Current, ID -- A 1.2 V 1.4 1.2 1.0 0.8 0.6 0.4 0.8 8.0V 1.5V 2.0 0.4 0.2 0 0.8 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25 °C VGS=1.0V --25 ° C 1.4 1.6 25° 1.8 2.0 IT08578 140 160 IT08580 Drain-to-Source Voltage, VDS -- V 400 IT08577 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 400 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 300 250 350 300 250 0.5A 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 I D= 200 150 100 50 0 --60 ID=0.1A 1.0A V =2.5 VGS .5A, 0 I D= =4.0V VGS .0A, I D=1 , VG 0.1A 1.8 S= V --40 --20 0 20 40 60 80 100 120 Gate-to-Source Voltage, VGS -- V IT08579 Ambient Temperature, Ta -- °C No.8162-2/4 7 C 5°C VDS=10V MCH3456 7 yfs -- ID VDS=10V 3 2 1.0 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 5 3 Forward Current, IF -- A 2 2 C 5° 7 5 3 2 0.1 7 5 3 2 1.0 7 5 3 2 Ta -25 =- °C °C 75 Ta= 75° C 25° C 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 0.4 0.5 0.6 0.7 --25 ° 0.8 C 0.9 1.0 1.1 IT08582 Drain Current, ID -- A 3 2 IT08581 3 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=10V VGS=4V tf td(off) 2 Switching Time, SW Time -- ns 100 5 3 2 10 7 5 3 2 1.0 0.01 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 2 4 6 8 10 12 14 16 Ciss, Coss, Crss -- pF 7 Ciss 100 7 5 td(on) tr 3 2 Coss Crss Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IT08583 2 10 7 5 Drain-to-Source Voltage, VDS -- V IT08584 VGS -- Qg ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=1.8A Drain Current, ID -- A IDP=7.2A 3 2 1.0 7 5 3 2 0.1 7 5 3 2