MCH3459

Ordering number : ENN8110 MCH3459 MCH3459 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 30 ±20 1.8 7.2 0.8 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=0.5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 30 1 ±10 1.2 0.78 1.3 150 290 95 22 16 6.2 4.5 13 6.4 195 410 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : LL Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1004PE TS IM TB-00000650 No.8110-1/4 MCH3459 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A IS=1.8A, VGS=0 Ratings min typ 3.2 0.74 0.42 0.93 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2167A 0.25 Switching Time Test Circuit VIN 0.3 3 0.15 VDD=15V 10V 0V VIN ID=1A RL=15Ω VOUT 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 PW=10µs D.C.≤1% D G 3 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) P.G 50Ω S MCH3459 0.85 SANYO : MCPH3 1.8 ID -- VDS V V 2.0 ID -- VGS Ta= --25 °C 75° C 1.5 2.0 6.0 4.0 1.4 Drain Current, ID -- A Drain Current, ID -- A 3.5 V 1.6 1.4 1.2 1.0 0.8 0.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3.0V VGS=2.5V 0.2 0 0 0.5 1.0 25° 0.4 Ta= 75° C --25° C C 2.5 3.0 3.5 4.0 25° 4.5 IT07279 140 160 IT07283 1.6 10.0 Drain-to-Source Voltage, VDS -- V 700 V 1.8 IT07277 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 500 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 450 400 350 300 250 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 120 600 500 400 , VG 0.5A I D= 4V S= 1.0A 300 ID=0.5A .0A I D=1 =10V , VGS 200 100 0 0 2 4 6 8 10 12 14 16 18 20 Gate-to-Source Voltage, VGS -- V IT07281 Ambient Temperature, Ta -- °C No.8110-2/4 C VDS=10V MCH3459 5 yfs -- ID VDS=10V 5 3 2 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 3 Forward Current, IF -- A 2 1.0 7 5 3 2 25 =- °C 1.0 7 5 Ta= 75° C Ta 7 5°C 0.1 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0.01 0.4 0.5 0.6 0.7 --25 0.8 0.9 °C 25 2 25° C °C 3 1.0 1.1 1.2 Drain Current, ID -- A 3 2 IT07285 3 2 SW Time -- ID VDD=15V VGS=10V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT07287 Switching Time, SW Time -- ns 100 7 5 3 2 10 7 5 3 2 1.0 0.01 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 0 5 10 15 20 25 30 IT07291 100 7 5 Ciss td(off) td(on) tf 3 2 tr Coss Crss Drain Current, ID -- A 10 9 IT07289 2 10 7 5 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO IDP=7.2A