MCH3476

Ordering number : ENA1952 MCH3476 SANYO Semiconductors DATA SHEET MCH3476 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 20 ±12 2 8 0.8 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7019A-003 2.0 3 2.1 1.6 0 t o 0.02 0.15 Product & Package Information • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 0.25 Packing Type : TL Marking FH LOT No. LOT No. 1 0.25 0.65 2 0.3 TL 0.85 Electrical Connection 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 1 3 0.07 2 http://semicon.sanyo.com/en/network N0211PE TKIM TC-00002601 No. A1952-1/4 MCH3476 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4.5V ID=0.5A, VGS=2.5V ID=0.3A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4.5V, ID=2A VDS=10V, VGS=4.5V, ID=2A VDS=10V, VGS=4.5V, ID=2A IS=2A, VGS=0V Ratings min 20 1 ±10 0.4 1.9 93 135 200 128 28 21 5.1 11 14.5 12 1.8 0.3 0.55 0.85 1.2 125 190 310 1.3 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 4.5V 0V VIN VDD=10V ID=1A RL=10Ω D VOUT VIN PW=10μs D.C.≤1% G MCH3476 P.G 50Ω S 2.0 ID -- VDS 6.0V 4.5V 2.5V 1.8 V Ta=25°C 2.5 ID -- VGS VDS=10V Drain Current, ID -- A 1.5V 1.0 Drain Current, ID -- A 1.5 8.0V 2.0 1.5 1.0 75 °C 0.5 Ta = 0 0.2 0.4 0.6 0.8 1.0 1.2 0.5 VGS=1.2V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 25° C 1.4 1.6 --25 °C 1.8 2.0 Drain-to-Source Voltage, VDS -- V IT16372 Gate-to-Source Voltage, VGS -- V IT16373 No. A1952-2/4 MCH3476 400 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=0.3A 0.5A Ta=25°C 400 350 300 250 200 150 100 50 0 --60 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 300 250 200 150 100 50 0 1A A =0.3 V, I D =1.8 VGS 0.5A , I D= =2.5V VGS =1.0A 4.5V, I D V GS= 0 1 2 3 4 5 6 7 8 9 10 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID IT16641 10 7 5 3 2 Ambient Temperature, Ta -- °C IS -- VSD IT16642 Forward Transfer Admittance, | yfs | -- S 7 5 VDS=10V VGS=0V 2 1.0 7 5 3 2 0.1 0.01 °C -25 C =Ta 75° °C 25 Source Current, IS -- A 3 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 1000 7 5 SW Time -- ID 5 7 10 IT16643 0.001 Ta= 7 5°C 25°C --25° C 0.4 0.6 0.8 1.0 1.2 IT16377 VDD=10V VGS=4.5V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT16644 Ciss 100 7 5 3 2 10 tf td(off) td(on) tr Coss Crss 0 2 4 6 8 10 12 14 16 18 20 Drain Current, ID -- A 4.5 4.0 3.5 VGS -- Qg Drain-to-Source Voltage, VDS -- V 10 7 5 3 2 ASO IT16379 Gate-to-Source Voltage, VGS -- V VDS=10V ID=2A Drain Current, ID -- A IDP=8A (PW≤10μs) ID=2A 1m 10 10 0μ s s 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.0 7 5 3 2 0.1 7 5 3 2 DC 10 ms op 0m s era tio n Operation in this area is limited by RDS(on). 0.01 0.1 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC IT16380 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16381 No. A1952-3/4 MCH3476 1.0 PD -- Ta When mounted on ceramic substrate (900mm2×0.8mm) Allowable Power Dissipation, PD -- W 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16382 Note on usage : Since the MCH3476 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2011. Specifications and information herein are subject to change without notice. PS No. A1952-4/4