MCH3914

Ordering number : ENA1511 MCH3914 SANYO Semiconductors DATA SHEET MCH3914 Features • • • • • High-Frequency Amplifier, Analog Switch Applications N-Channel Junction Silicon FET | yfs | is large. Ciss is small. Small package. FBET process. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg When mounted on ceramic substrate (600mm2×0.8mm) Conditions Ratings 15 --15 5 50 300 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)GDS IGSS VGS(off) Conditions IG=--10μA, VDS=0V VGS=--10V, VDS=0V VDS=5V, ID=10μA --0.6 --1.4 Ratings min --15 --1.0 --3.0 typ max Unit V nA V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 72209AC TK IM TC-00002014 No. A1511-1/4 MCH3914 Continued from preceding page. Parameter Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol IDSS | yfs |1 | yfs |2 Ciss Crss Conditions VDS=5V, VGS=0V VDS=5V, ID=10mA, f=1kHz VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=1MHz Ratings min 16.0* 14 14 21 29 4.9 1.4 typ max 50.0* Unit mA mS mS pF pF * : The MCH3914 is classified by IDSS as follows : (unit : mA) Marking Rank IDSS J7 7 16.0 to 32.0 J8 8 25.0 to 50.0 Package Dimensions unit : mm (typ) 7019A-006 0.25 2.0 3 0.15 2.1 1.6 0 t o 0.02 1 0.25 0.65 2 0.3 0.85 0.07 1 : Source 2 : Drain 3 : Gate SANYO : MCPH3 24 ID -- VDS VDS=0V 60 ID -- VGS VDS=5V 20 50 Drain Current, ID -- mA 16 --0.2V Drain Current, ID -- mA 40 8 --0.6V --0.8V --1.0V 20 ID 0 =5 SS 4 10 32 m --0.4 16 16 20 ITR02811 0 --2.8 --2.4 --2.0 --1.6 --1.2 --0.8 0 0 4 8 12 A A m 25 A m 20 12 --0.4V 30 m A mA 0 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V IT14783 No. A1511-2/4 MCH3914 50 ID -- VGS Forward Transfer Admittance, | yfs | -- mS VDS=5V IDSS=25mA 100 | yfs | -- IDSS VDS=5V f=1kHz 7 40 Drain Current, ID -- mA 5 30 20 Ta =-2 5° C 3 | yfs | =0V) (VGS 25 °C 10 75 °C 2 | yfs | (I =1 D 0mA) 0 --2.0 --1.6 --1.2 --0.8 --0.4 0 ITR02813 10 5 7 10 2 3 5 7 Gate-to-Source Voltage, VGS -- V 5 VGS(off) -- IDSS Drain Current, IDSS -- mA 10 100 IT14784 Ciss -- VDS VDS=5V ID=10μA Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V 7 VGS=0V f=1MHz 3 5 2 3 --1.0 2 7 5 5 7 10 2 3 5 7 1.0 Drain Current, IDSS -- mA 5 100 IT14785 350 7 1.0 2 3 5 7 10 2 ITR02816 Crss -- VDS Drain-to-Source Voltage, VDS -- V PD -- Ta Reverse Transfer Capacitance, Crss -- pF Allowable Power Dissipation, PD -- mW VGS=0V f=1MHz 300 250 200 150 100 50 0 When mounted on ceramic substrate (600mm2×0.8mm) 3 2 1.0 7 5 7 1.0 2 3 5 7 10 2 ITR02817 0 20 40 60 80 100 120 140 160 Drain-to-Source Voltage, VDS -- V Ambient Temperature, Ta -- °C IT14786 No. A1511-3/4 MCH3914 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2009. Specifications and information herein are subject to change without notice. PS No. A1511-4/4