MCH5811

Ordering number : ENN8059 MCH5811 MCH5811 Features • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • Composite type with a N-channel sillicon MOSFET (MCH3405) and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 20 ±10 1.5 6 0.8 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : QM Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1004 TS IM TB-00000604 No.8059-1/6 MCH5811 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=0.3A IF=0.5A VR=6V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 15 0.30 0.33 20 10 0.33 0.36 90 V V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=1.5A VDS=10V, VGS=10V, ID=1.5A VDS=10V, VGS=10V, ID=1.5A IS=1.5A, VGS=0 0.4 1.68 2.8 160 200 280 100 22 15 6.5 28 19 13 4.5 0.4 0.4 0.9 1.2 210 280 390 20 1 ±10 1.3 V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2195 0.25 Electrical Connection 5 0.3 4 2.1 1.6 4 0.15 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 1 2 3 0.07 3 0.25 2 1 Top view 0.65 2.0 (Bottom view) 5 4 0.85 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 1 2 3 (Top view) No.8059-2/6 MCH5811 Switching Time Test Circuit [MOSFET] VIN 4V 0V VIN PW=10µs D.C.≤1% ID=1A RL=10Ω VOUT 50Ω 10µs --5V 100Ω 10Ω VDD=10V trr Test Circuit [SBD] Duty≤10% 100mA 10mA D G 100mA trr P.G 50Ω S MCH5811 2.0 ID -- VDS 3.0V [MOSFET] 2.0 ID -- VGS VDS=10V [MOSFET] --25 °C Ta= 2.5 1.8 Drain Current, ID -- A 4.0V Drain Current, ID -- A 6.0V 1.5 V 1.4 1.2 1.0 0.8 1.2 10.0 0.8 V Ta= 75° C 0.4 0.4 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 400 Drain-to-Source Voltage, VDS -- V IT02901 RDS(on) -- VGS [MOSFET] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 350 300 250 200 150 100 50 0 --60 Gate-to-Source Voltage, VGS -- V IT02902 RDS(on) -- Ta [MOSFET] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 300 1.0A 250 200 150 100 50 0 0 2 4 6 8 10 IT02903 ID=0.5A V =2.5 VGS .5A, I D=0 =4.0V VGS 1.0A, I D= --40 --20 0 20 40 60 25 0.2 °C VGS=1.0V --25 °C 0.6 80 100 120 25 140 160 IT02904 1.6 1 V .8 1.6 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C No.8059-3/6 °C 75 °C V MCH5811 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 23 5 7 0.01 23 5 7 0.1 23 5 7 1.0 23 5 yfs -- ID [MOSFET] VDS=10V Forward Transfer Admittance, yfs -- S 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.2 0.3 0.4 IF -- VSD [MOSFET] VGS=0 = Ta --2 C 5° °C 75 Forward Current, IF -- A C 25° Ta= 75 0.5 °C C --25 °C 25° 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Drain Current, ID -- A 100 7 IT02905 SW Time -- ID [MOSFET] 1000 7 5 IT02906 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] Switching Time, SW Time -- ns 5 3 2 VDD=10V VGS=4V f=1MHz td(off) Ciss, Coss, Crss -- pF 3 2 tr 10 7 5 3 2 tf td(on) 100 7 5 3 2 Ciss Coss Crss 0 2 4 6 8 10 12 14 16 18 20 1.0 0.1 10 2 3 5 7 1.0 2 3 5 IT02907 Drain Current, ID -- A 10 9 VGS -- Qg [MOSFET] Gate-to-Source Voltage, VGS -- V VDS=10V ID=1.5A Drain Current, ID -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 IT07692 Drain-to-Source Voltage, VDS -- V IT02908 ASO [MOSFET] IDP=6.0A