MCH5823

Ordering number : ENN7757 MCH5823 MCH5823 Features • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-Channel Silicon MOSFET (MCH3339) and a Schottky Barrier Diode (SS10015M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit --12 ±12 --1.5 --6.0 0.8 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : QZ Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2004PE TS IM TB-00001070 No.7757-1/5 MCH5823 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=0.3A IF=0.5A VR=6V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 15 0.30 0.33 20 10 0.33 0.36 90 V V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--12V, VGS=0 VGS=±9.6V, VDS=0 VDS=--6V, ID=--1mA VDS=--6V, ID=--0.8A ID=--0.8A, VGS=-10V ID=--0.4A, VGS=-4.5V ID=--0.1A, VGS=-4V VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=-10V, ID=--1.5A VDS=--10V, VGS=-10V, ID=--1.5A VDS=--10V, VGS=-10V, ID=--1.5A IS=--1.5A, VGS=0 --1.0 0.72 1.2 200 340 370 145 45 35 7.5 20 16 12 3.8 0.5 0.5 --0.94 --1.5 270 490 530 --12 --1 ±10 --2.4 V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2195 0.25 Electrical Connection 5 4 0.3 4 5 0.15 2.1 1.6 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 1 2 3 0.25 0.65 2.0 (Bottom view) 0.07 3 2 1 Top view 5 4 0.85 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 1 2 3 (Top view) No.7757-2/5 MCH5823 Switching Time Test Circuit [MOSFET] 0V --10V VIN PW=10µs D.C.≤1% ID= --0.8A RL=12.5Ω VOUT 10µs --5V trr Test Circuit VDD= --10V VIN [SBD] Duty≤10% 100mA D G 100mA 50Ω 100Ω 10Ω P.G 50Ω MCH5823 trr S --2.0 ID -- VDS --1 0V .5V --4 [MOSFET] --2.0 ID -- VGS VDS= --10V [MOSFET] Ta= --25 25 °C °C --6 . --4 --1.8 --1.6 . 0V 0V --1.8 --1.6 Drain Current, ID -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain Current, ID -- A V --3.0 --1.4 --1.2 --1.0 --0.8 VGS= --2.5V --0.4 --0.2 0 --0.9 --1.0 0 --0.5 --1.0 --1.5 Ta =7 5°C --2 5°C --0.6 25 °C --2.0 --2.5 --3.0 75° --3.5 140 160 IT05616 --1.2 IT05618 800 IT05613 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS [MOSFET] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.4A ID= --0.1A 600 500 400 300 200 100 0 0 --2 --4 --6 --8 Ta=25°C 700 IT05614 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] 600 --0.8A 500 400 300 200 .0V = --4 , VGS A --0.1 V I D= --4.5 S= A, VG --0.4 I D= = --10V A, V GS I D= --0.8 100 0 --60 --10 --12 --40 --20 0 20 40 60 80 100 120 7 Forward Transfer Admittance, yfs -- S 5 3 IT05615 Gate-to-Source Voltage, VGS -- V yfs -- ID [MOSFET] VDS= --10V Ambient Temperature, Ta -- °C 5 3 2 IF -- VSD VGS=0 [MOSFET] Forward Current, IF -- A --1.0 7 5 2 25° C 5 3 2 --0.1 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 57 IT05617 --0.01 --0.4 --0.6 Ta= --0.8 75°C 7 2 --25 °C 1.0 25 °C Ta= 5° --2 C C 75° 3 --1.0 Drain Current, ID -- A Diode Forward Voltage, VSD -- V No.7757-3/5 C 10mA MCH5823 5 3 SW Time -- ID [MOSFET] VDD= --10V VGS= --10V 3 2 Ciss, Coss, Crss -- VDS Ciss [MOSFET] f=1MHz Switching Time, SW Time -- ns 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.01 Ciss, Coss, Crss -- pF 100 7 5 td(off) tf td(on) Coss Crss 3 2 tr 10 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 57 IT05619 0 --2 --4 --6 --8 --10 --12 Drain Current, ID -- A --10 --9 VGS -- Qg [MOSFET] Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --1.5A --10 7 5 3 2 --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 IT05621 Drain Current, ID -- A --1.0 7 5 3 2 --0.1 7 5 3 2 IT05620 Drain-to-Source Voltage, VDS -- V ASO [MOSFET] IDP= --6.0A