MCH6121

Ordering number : ENA1286 MCH6121 SANYO Semiconductors DATA SHEET MCH6121 Applications • PNP Epitaxial Planar Silicon Transistor DC / DC Converter Amplifier Relay drivers, lamp drivers, motor drivers, line switch. Features • • • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (600mm2×0.8mm) Conditions Ratings -15 -12 -5 -3 -5 -600 1 150 -55 to +150 Unit V V V A A mA W °C °C Marking : AX Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O0808EA TI IM TC-00001605 No. A1286-1/4 MCH6121 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB= -12V, IE=0A VEB= -4V, IC=0A VCE= -2V, IC= -500mA VCE= -2V, IC= -500mA VCB= -10V, f=1MHz IC= -1.5A, IB= -30mA IC= -1.5A, IB= -30mA IC= -10μA, IE=0A IC= -1mA, RBE=∞ IE= -10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. -15 -12 -5 30 90 14 200 380 40 -110 -0.85 -165 -1.2 Ratings min typ max -0.1 -0.1 560 MHz pF mV V V V V ns ns ns Unit μA μA Package Dimensions unit : mm (typ) 7022A-007 Switching Time Test Circuit PW=20μs D.C.≤1% IB1 IB2 VR 50Ω 1kΩ OUTPUT 0.25 2.0 6 5 4 0.15 INPUT RL 2.1 1.6 0 t o 0.02 + 220μF + 470μF VCC= --5V 0.25 1 0.65 2 3 0.3 VBE=5V --20IB1=20IB2=IC=--1.5A 0.85 1 2 3 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector SANYO : MCPH6 0.07 6 5 4 --2.0 IC -- VCE --14m A A --12m --3.0 IC -- VBE VCE=--2V --1.8 --10mA Collector Current, IC -- A Collector Current, IC -- A --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 --8mA --6mA --2.5 A --16m --2.0 Ta=75°C --4mA --1.5 --1.0 --2mA --0.5 IB=0mA 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 25°C --25 °C --1.0 --1.2 IT04545 Collector-to-Emitter Voltage, VCE -- V IT04544 Base-to-Emitter Voltage, VBE -- V No. A1286-2/4 MCH6121 1000 7 5 hFE -- IC VCE=--2V Gain-Bandwidth Product, fT -- MHz 1000 7 5 3 2 fT -- IC VCE= --2V Ta=75°C 25°C --25°C DC Current Gain, hFE 3 2 100 7 5 3 2 0.01 --0.01 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 100 Cob -- VCB 5 7 --10 IT04546 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 5 3 VCE(sat) -- IC IT04547 f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV IC / IB=20 Output Capacitance, Cob -- pF 7 2 5 --100 7 5 3 2 --10 7 5 3 2 --1.0 --0.01 2 3 5 7 --0.1 °C 25 = Ta °C 75 C 5° --2 3 2 10 --1.0 2 3 5 7 --10 2 3 2 3 5 7 --1.0 2 3 5 7 --10 IT04549 Collector-to-Base Voltage, VCB -- V 5 VCE(sat) -- IC IT04548 2 Collector Current, IC -- A VBE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=50 --1.0 7 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 --25°C 75 °C Ta = --100 7 5 3 2 °C 25 -- ° 25 C Ta=75°C 25°C 3 2 --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 Collector Current, IC -- A --10 7 5 3 ASO IT04550 1.2 Collector Current, IC -- A PC -- Ta IT04551 Collector Current, IC -- A 2 --1.0 7 5 3 2 --0.1 7 5 3 2 DC 10 0m m s op s Collector Dissipation, PC -- mW ICP= --5A IC= --3A