MCH6536_08

Ordering number : EN7645A MCH6536 SANYO Semiconductors DATA SHEET MCH6536 Applications • PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications MOSFET gate drivers, low-frequency power amplifier, high-speed switching, motor drivers. Features • • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting. Ultrasmall package permitting applied sets to be small and slim. Small ON-resistance (Ron). Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg When mounted on ceramic substrate (600mm2✕0.8m) When mounted on ceramic substrate (600mm2✕0.8m) Conditions Ratings (--15)20 (--12)15 (--)5 (-500)700 (-1.0)1.4 0.5 0.55 150 --55 to +150 Unit V V V mA A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=(--12)15V, IE=0A VEB=(-)4V, IC=0A VCE=(--)2V, IC=(--)10mA VCE=(--)2V, IC=(--)50mA 300 (490)330 Ratings min typ max (--)100 (--)100 (700)800 MHz Unit nA nA Marking : EJ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O0108 TI IM TC-00001643 / 42004EA TS IM TA-100667 No.7645-1/5 MCH6536 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)10V, f=1MHz IC=(--)200mA, IB=(--)10mA IC=(--)200mA, IB=(--)10mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ IE=(-)10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit (--15)20 (--12)15 (--)5 30 (57)77 (30)40 Ratings min typ (4)3.2 (-)150 (--)0.9 (--)300 (--)1.2 max Unit pF mV V V V V ns ns ns Package Dimensions unit : mm (typ) 7022A-012 0.25 2.0 6 5 4 0 to 0.02 0.15 Electrical Connection 6 5 4 1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR) Top view 2.1 1.6 1 0.25 1 2 3 0.3 2 3 0.65 0.85 1 2 3 1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR) SANYO : MCPH6 0.07 6 5 4 Switching Time Test Circuit [PNP] IB1 OUTPUT IB2 VR 50Ω RB [NPN] IB1 OUTPUT IB2 VR 50Ω + 220μF VBE= --5V + 470μF VCC=5V RB PW=20μs D.C.≤1% INPUT PW=20μs D.C.≤1% INPUT RL + 470μF VCC= --5V RL + 220μF VBE=5V IC=20IB1= --20IB2= --400mA IC=20IB1= --20IB2=500mA No.7645-2/5 MCH6536 --1.0m --0.9m A A --200 --180 IC -- VCE mA --0.8 --0.7mA [PNP] 200 IC -- VCE 0.9 mA A 0.8m [NPN] --0.6mA Collector Current, IC -- mA --0.5mA 180 160 0.7mA 0.6mA Collector Current, IC -- mA --160 --140 --120 --100 --80 --60 1.0mA --0.4mA --0.3mA 140 120 100 80 0.5mA 0.4mA 0.3mA 0.2mA --0.2mA 60 40 20 --0.1mA --40 --20 0 0 0.1mA IB=0mA 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IB=0mA --0.5 --1.0 --1.5 --2.0 IT05201 0 Collector-to-Emitter Voltage, VCE -- V --600 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 800 700 IT05490 [PNP] VCE= --2V IC -- VBE [NPN] VCE=2V --500 Collector Current, IC -- mA Collector Current, IC -- mA 600 500 400 300 200 100 --400 --300 --100 Ta= 7 5°C 25° C --25 °C --200 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT05202 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT05491 Base-to-Emitter Voltage, VBE -- V 1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V 1000 7 5 [PNP] VCE= --2V hFE -- IC 5°C 25°C --25 °C [NPN] VCE=2V 2 3 5 7 1000 IT05492 7 5 Ta=75°C 25°C 25°C DC Current Gain, hFE --25°C 3 DC Current Gain, hFE Ta=75°C 3 2 --25°C 2 100 7 100 7 --1.0 5 3 1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA --1000 7 5 7--1000 IT05203 2 3 5 7 10 2 3 5 7 100 VCE(sat) -- IC Collector Current, IC -- mA 1000 7 [PNP] IC / IB=20 VCE(sat) -- IC Ta= 7 [NPN] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 5 3 2 --100 7 5 3 2 100 7 5 3 2 2 5°C =7 Ta C 5° --2 C 5° = Ta °C 75 C 5° --2 25 °C --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 7--1000 IT05204 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 5 7 1000 IT05493 No.7645-3/5 MCH6536 --1000 7 VCE(sat) -- IC [PNP] IC / IB=50 1000 7 VCE(sat) -- IC [NPN] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 --100 7 5 3 2 °C 25 5°C =7 Ta 5°C --2 100 7 5 3 2 = Ta 2 °C 75 5°C --2 5°C --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA --10 7 5 7--1000 IT05205 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 VBE(sat) -- IC Collector Current, IC -- mA 10000 7 5 7 1000 IT05494 [PNP] IC / IB=20 VBE(sat) -- IC [NPN] IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 5 3 2 25°C --1.0 7 5 3 2 Ta= --25°C 75°C 1000 7 5 3 2 Ta= --25°C 75°C 25°C --0.1 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 3 5 7--1000 IT05206 100 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Cob -- VCB Collector Current, IC -- mA 10 5 7 1000 IT05495 [PNP] f=1MHz Cob -- VCB [NPN] f=1MHz Output Capacitance, Cob -- pF 2 Output Capacitance, Cob -- pF 7 5 10 7 5 3 2 3 2 1.0 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 1000 IT05207 fT -- IC Collector-to-Base Voltage, VCB -- V 7 IT05497 [PNP] VCE= --2V fT -- IC [NPN] VCE=2V Gain-Bandwidth Product, fT -- MHz Gain-Bandwidth Product, fT -- MHz 7 5 5 3 2 3 2 100 7 5 1.0 100 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 7--1000 IT05208 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 5 7 1000 IT05496 No.7645-4/5 MCH6536 10 7 5 Ron -- IB f=1MHz IN 1kΩ 1kΩ IB [PNP] OUT 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 Ron -- IB f=1MHz IN 1kΩ 1kΩ IB [NPN] OUT ON-resistance, Ron -- Ω 3 2 1.0 7 5 3 2 ON-resistance, Ron -- Ω 3 0.1 --0.1 2 3 5 7 --1.0 2 5 Base Current, IB -- mA 0.7 --10 IT06068 7 0.1 0.1 2 3 5 7 1.0 2 3 5 PC -- Ta Base Current, IB -- mA 7 10 IT06067 When mounted on ceramic substrate (600mm2✕0.8mm) 0.6 Collector Dissipation, PC -- W 0.55 0.5 0.4 To ta lD 0.3 1u iss nit ipa tio n 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT06387 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No.7645-5/5