MCH6544

Ordering number : EN8952 MCH6544 SANYO Semiconductors DATA SHEET MCH6544 Applications • NPN Epitaxial Planar Silicon Transistor Inverter Circuit / Driver Applications Relay drivers, lamp drivers, motor drivers. Features • • Composite type with an NPN transistor contained in one package facilitating high-density mounting. Ultrasmall package facilitates miniaturization in end products. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg When mounted on ceramic substrate (600mm2✕0.8mm) 1unit When mounted on ceramic substrate (600mm2✕0.8mm) Conditions Ratings 60 50 5 500 1.5 0.5 0.55 150 --55 to +150 Unit V V V mA A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=10mA VCE=10V, IC=50mA VCB=10V, f=1MHz 300 500 2.8 Conditions Ratings min typ max 100 100 800 MHz pF Unit nA nA Marking : ES Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408EA TI IM TC-00001383 No.8952-1/4 MCH6544 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turm-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=100mA, IB=10mA IC=100mA, IB=10mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 60 50 5 30 340 55 Ratings min typ 50 0.9 max 100 1.2 Unit mV V V V V ns ns ns Package Dimensions unit : mm (typ) 7022A-011 Electrical Connection 6 5 4 0.25 2.0 6 5 4 0.15 2.1 1.6 0 to 0.02 1 2 3 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 Top view 0.25 1 0.65 2 3 0.3 0.85 1 2 3 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 SANYO : MCPH6 0.07 6 5 4 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω RB RL + 220μF + 470μF VCC=25V VBE= --5V IC=20IB1= --20IB2=200mA No.8952-2/4 MCH6544 500 IC -- VCE A A1 5m 7mA 600 IC -- VBE VCE=2V 450 Collector Current, IC -- mA 30mA 350 300 250 200 150 100 50 0 0 3mA Collector Current, IC -- mA 20m 400 A 10m 8mA 5mA 500 400 2mA 1mA 600μA 300 200 200μA IB=0μA 100 200 300 400 500 600 700 800 900 1000 100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT05107 Collector-to-Emitter Voltage, VCE -- mV 1000 7 5 3 2 IT05106 3 hFE -- IC Base-to-Emitter Voltage, VBE -- V VCE(sat) -- IC Ta=75°C 25°C --25°C Ta=7 5°C 25°C --25°C IC / IB=10 2 3 5 7 10 2 3 VCE=2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 DC Current Gain, hFE 100 5 3 2 100 7 5 3 2 10 7 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05108 5 1.0 --2 5 7 100 5° C 25 °C Ta =7 5° C 2 7 3 5 7 1000 IT05411 Collector Current, IC -- mA 3 VCE(sat) -- IC Collector Current, IC -- mA 1000 7 VCE(sat) -- IC IC / IB=20 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 5 3 2 100 7 5 Ta =7 5° C 5° C 25 --2 °C 100 7 5 3 2 25 °C = Ta 75 °C 3 2 --2 C 5° 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05109 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05110 Collector Current, IC -- mA 10 7 VBE(sat) -- IC Collector Current, IC -- mA 10 Cob -- VCB f=1MHz IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 Output Capacitance, Cob -- pF 2 3 5 7 1000 IT05111 5 7 5 1.0 7 5 3 2 25°C Ta= --25°C 3 75°C 2 0.1 1.0 2 3 5 7 10 2 3 5 7 100 1.0 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA Collector-to-Base Voltage, VCB -- V IT05112 No.8952-3/4 MCH6544 1000 fT -- IC VCE=10V Gain-Bandwidth Product, fT -- MHz 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 Ron -- IB f=1MHz IN 1kΩ 1kΩ IB OUT 7 5 3 2 100 1.0 ON Resistance, Ron -- Ω 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05113 0.1 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- mA 0.6 PD -- Ta Base Current, IB -- mA 7 10 IT06092 Allowable Power Dissipation, PD -- W 0.55 0.5 When mounted on ceramic substrate (600mm2✕0.8mm) 0.4 To t 1u al t 0.3 di ss ip ni at io n 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT10744 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No.8952-4/4