MCH6545

Ordering number : EN8953 MCH6545 SANYO Semiconductors DATA SHEET MCH6545 Applications • PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting. Ultrasmall package allows applied sets to be made small and thin. Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg Mounted on a ceramic board (600mm2!0.8m) Mounted on a ceramic board (600mm2!0.8m) Conditions Ratings (--50)60 (--)50 (--)5 (--)500 (--)1.0 0.5 0.55 150 --55 to +150 Unit V V V mA A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)10mA VCE=(--)10V, IC=(-)50mA VCB=(--)10V, f=1MHz IC=(--)100mA, IB=(--)10mA IC=(--)100mA, IB=(--)10mA IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0A (--50)60 (-)50 (--)5 (200)300 (690)500 (3.8)2.8 (--60)50 (--)0.9 (--120)100 (--)1.2 Ratings min typ max (-)100 (-)100 (500)700 MHz pF mV V V V V Unit nA nA Marking : ET Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 32406EA MS IM TB-00002174 No.8953-1/5 MCH6545 Continued from preceding page. Parameter Turn-On Time Storage Time Fall Time Symbol ton tstg tf Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min typ (30)30 (170)340 (30)55 max Unit ns ns ns Package Dimensions unit : mm 7022A-011 2.0 0.15 Electrical Connection 6 5 4 6 5 4 0 to 0.02 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 Top view 2.1 1.6 0.25 0.25 1 0.65 2 3 0.3 1 2 3 0.85 1 2 3 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 SANYO : MCPH6 0.07 6 5 4 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω RB RL + 220µF + 470µF VCC=25V VBE= --5V IC=20IB1= --20IB2=200mA For PNP, the polarity is reversed. --40 m --450 --1 5mA A --10m 15m A --500 IC -- VCE A A mA 0m -25m --20 --3 - [PNP] 500 450 IC -- VCE 7mA 1 0mA [NPN] A Collector Current, IC -- mA Collector Current, IC -- mA --50m A --400 --350 --300 --250 --200 --150 --100 --50 0 0 400 350 300 250 20m A 8mA 5mA 30mA --5mA --2mA 3mA 2mA 1mA --1mA 200 150 100 50 0 0 100 200 300 400 500 600 700 800 --500µA 600µA 200µA IB=0µA 900 1000 --200µA IB=0µA --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV IT05118 Collector-to-Emitter Voltage, VCE -- mV IT05106 No.8953-2/5 MCH6545 --600 IC -- VBE [PNP] VCE= --2V 600 IC -- VBE [NPN] VCE=2V --500 500 Collector Current, IC -- mA --400 Collector Current, IC -- mA 400 --300 300 Ta=75 °C 25°C --25°C --200 200 --100 100 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT05119 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT05107 Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC Base-to-Emitter Voltage, VBE -- V 1000 7 5 3 2 [PNP] VCE= --2V hFE -- IC Ta=7 5°C 25°C --25°C [NPN] VCE=2V Ta=75°C 25°C --25°C DC Current Gain, hFE 3 2 DC Current Gain, hFE Ta=75°C 25°C --25°C 100 7 5 3 2 100 7 5 3 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 3 5 7--1000 IT05120 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05108 VCE(sat) -- IC Collector Current, IC -- mA 3 [PNP] Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV VCE(sat) -- IC [NPN] IC / IB=10 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 2 100 5 3 2 C 25° --2 5° C 2 10 7 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7 5 1.0 2 3 5 7 10 2 3 --2 5 7 100 5° C = Ta 75 °C 3 °C 25 Ta = 2 7 5 75 °C --100 7 3 5 7 1000 IT05411 Collector Current, IC -- mA --1000 IT05410 Collector Current, IC -- mA 3 VCE(sat) -- IC [PNP] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV VCE(sat) -- IC [NPN] Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 3 2 IC / IB=20 2 100 --100 7 5 3 2 Ta = 7 5 7 Ta= 5°C 5°C --2 °C 25 3 2 25°C --10 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 7--1000 IT05123 10 1.0 2 3 5 7 10 2 3 5 7 100 --2 2 3 5° C 75 °C 5 7 1000 IT05109 Collector Current, IC -- mA No.8953-3/5 MCH6545 3 2 VCE(sat) -- IC [PNP] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 1000 7 5 3 2 VCE(sat) -- IC [NPN] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 7 5 3 2 --100 7 5 3 2 --10 --1.0 100 7 5 3 2 7 Ta= 5°C --25 25 °C = Ta °C 75 --2 C 5° °C 25°C 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 2 5 7--1000 IT05124 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05110 Collector Current, IC -- mA 10 7 VBE(sat) -- IC [PNP] IC / IB=20 VBE(sat) -- IC [NPN] IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 --1.0 Ta= --25°C 25°C 75°C 7 1.0 7 5 3 2 25°C Ta= --25°C 5 75°C 3 2 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 10 5 7--1000 IT05125 0.1 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 10 5 7 1000 IT05111 Cob -- VCB [PNP] f=1MHz Cob -- VCB [NPN] f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 2 3 5 7 2 3 5 7 7 7 5 5 3 3 2 2 1.0 --1.0 --10 Collector-to-Base Voltage, VCB -- V 1000 --100 IT05122 1.0 1.0 2 3 5 7 10 2 3 5 7 100 f T -- IC Collector-to-Base Voltage, VCB -- V 1000 IT05112 [PNP] VCE= --10V Gain-Bandwidth Product, fT -- MHz fT -- IC [NPN] VCE=10V Gain-Bandwidth Product, f T -- MHz 7 7 5 5 3 3 2 2 100 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 7--1000 IT05121 100 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05113 Collector Current, IC -- mA No.8953-4/5 MCH6545 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.1 2 3 5 7 2 3 5 7 --10 IT06093 Ron -- IB f=1MHz IN 1kΩ 1kΩ IB [PNP] OUT 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 Ron -- IB f=1MHz IN 1kΩ 1kΩ IB [NPN] OUT ON Resistance, Ron -- Ω ON Resistance, Ron -- Ω --1.0 0.1 0.1 2 3 5 7 1.0 2 3 5 Base Current, IB -- mA 0.6 PD -- Ta Base Current, IB -- mA 7 10 IT06092 [PNP/NPN] Mounted on a ceramic board (600mm2!0.8mm) Allowable Power Dissipation, PD -- W 0.55 0.5 0.4 To t 1u al t 0.3 di ss ip ni at io n 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT10744 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No.8953-5/5