MCH6602

Ordering number : EN6445B MCH6602 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6602 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Conditions Ratings 30 ±10 0.35 1.4 0.8 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 30 1 ±10 0.4 0.15 0.22 2.9 3.7 6.4 7.0 5.9 2.3 3.7 5.2 12.8 1.3 typ max Unit V µA µA V S Ω Ω Ω pF pF pF Marking : FB Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12407 TI IM TC-00000415 / 70306 / 42806PE MS IM TB-00002288 / 30300 TS (KOTO) TA-2509 No.6445-1/5 MCH6602 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0V Ratings min typ 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7022A-006 Electrical Connection 6 0.25 2.0 0.15 5 4 6 5 4 0 to 0.02 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 2.1 1.6 0.25 1 0.65 2 3 0.3 1 2 3 0.85 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 0.07 6 5 4 Switching Time Test Circuit VIN VDD=15V ID=80mA RL=187.5Ω VIN 4V 0V D VOUT PW=10µs D.C.≤1% G P.G 50Ω MCH6602 S No.6445-2/5 MCH6602 0.16 0.14 0.12 0.10 0.08 ID -- VDS 2. 5V 0.30 ID -- VGS --25 Ta= V 3.5V 4.0V 3 .0 2.0 V 0.25 °C 75 °C 2.5 VDS=10V Drain Current, ID -- A Drain Current, ID -- A 6.0 V 0.20 0.15 VGS=1.5V 0.06 0.04 0.02 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.10 0.05 0 0 0.5 1.0 1.5 2.0 3.0 IT00030 Drain-to-Source Voltage, VDS -- V 10 9 IT00029 10 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- ID Ta=25°C VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 8 7 6 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 5 Ta=75°C 3 80mA 5 ID=40mA 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 25°C --25°C 2 1.0 0.01 2 3 5 7 0.1 2 25 °C 3 5 IT00032 Gate-to-Source Voltage, VGS -- V 10 IT00031 100 RDS(on) -- ID Drain Current, ID -- A RDS(on) -- ID VGS=2.5V 7 VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 5 3 2 5 Ta=75°C 25°C 3 --25°C 10 7 5 3 2 Ta=75°C --25°C 25°C 2 1.0 0.01 2 3 5 7 0.1 2 3 5 IT00033 1.0 0.001 2 3 5 7 0.01 2 3 5 IT00034 Drain Current, ID -- A 7 RDS(on) -- Ta Drain Current, ID -- A 1.0 yfs -- ID Forward Transfer Admittance, yfs -- S 7 5 VDS=10V 25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 6 5 3 2 4 3 V 40m =4.0 I D= , VGS A 80m I D= G A, V 2. S= 5V 2 Ta= -- 5°C 75°C 0.1 7 5 3 2 2 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 0.01 0.01 2 3 5 7 0.1 2 3 5 IT00036 Ambient Temperature, Ta -- °C IT00035 Drain Current, ID -- A No.6445-3/5 MCH6602 1.0 7 5 IS -- VSD VGS=0V Switching Time, SW Time -- ns 1000 7 5 3 2 SW Time -- ID VDD=15V VGS=4V Source Current, IS -- A 3 2 75 °C 25 °C --2 5°C td (off) tf tr Ta = 0.1 7 5 3 2 100 7 5 3 2 td(on) 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT00037 10 0.01 2 3 5 7 0.1 2 IT00038 100 7 5 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V Diode Forward Voltage, VSD -- V Drain Current, ID -- A 10 9 8 7 6 5 4 3 2 1 VGS -- Qg VDS=10V ID=150mA Ciss, Coss, Crss -- pF 3 2 10 7 5 3 2 Ciss Coss Crss 1.0 0 2 4 6 8 10 12 14 16 18 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 3 2 1.0 IT00039 1.0 Total Gate Charge, Qg -- nC IT00040 ASO Allowable Power Dissipation, PD -- W PD -- Ta IDP=1.4A 1m s PW≤10µs 0.8 M Drain Current, ID -- A 7 5 3 2 0.1 7 5 3 2 0.01 ou ID=0.35A 10m nte s do 0.6 na Operation in this area is limited by RDS(on). DC ope rat ion 100 ce ms ram ic bo 0.4 ard (9 00 mm 2 0.2 ✕0 .8 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 2 3 5 7 10 2 3 5 IT01117 mm )1 un it 160 0 0 20 40 60 80 100 120 140 1.0 Drain-to-Source Voltage, VDS -- V Ambient Temperature, Ta -- °C IT01118 No.6445-4/5 MCH6602 Note on usage : Since the MCH6602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. 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Specifications and information herein are subject to change without notice. PS No.6445-5/5