MCH6604

Ordering number : EN6459A MCH6604 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6604 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Conditions Ratings 50 ±10 0.25 1 0.8 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=50V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=50mA ID=50mA, VGS=4V ID=30mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 50 1 ±10 0.4 130 180 6 7.1 10 6.6 4.7 1.7 7.8 9.9 20 1.3 typ max Unit V µA µA V mS Ω Ω Ω pF pF pF Marking : FD Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 52506PE MS IM TB-00002287 / 60100 TS (KOTO) TA-2459 No.6459-1/5 MCH6604 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA IS=100mA, VGS=0V Ratings min typ 18 42 190 105 1.57 0.20 0.32 0.85 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7022A-006 2.0 0.15 Electrical Connection 6 5 4 6 5 4 0 to 0.02 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 2.1 1.6 0.25 0.25 1 0.65 2 3 0.3 0.85 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 0.07 6 5 4 Switching Time Test Circuit VDD=25V 4V 0V VIN VIN ID=50mA RL=500Ω D VOUT PW=10µs D.C.≤1% G P.G 50Ω S MCH6604 No.6459-2/5 MCH6604 0.10 0.09 0.08 ID -- VDS 3.0 0.20 ID -- VGS VDS=10V C 2.0 3.5V 4.0V V 0.16 Ta= --25° C 2. 5V V 2.0 0.18 Drain Current, ID -- A 0.07 Drain Current, ID -- A 0.06 0.05 0.04 0.03 0.02 0.01 0 0 0.2 0.12 0.10 0.08 0.06 0.04 0.02 0 0.4 0.6 0.8 1.0 IT00054 0 0.5 1.0 1.5 75° C 6.0 V V GS=1.5 0.14 V 25° 2.5 3.0 IT00055 Drain-to-Source Voltage, VDS -- V 12 11 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 100 7 RDS(on) -- ID Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 3 2 10 9 8 7 6 5 4 3 2 0 1 2 3 4 5 6 7 8 9 10 ID=30mA 50mA 10 7 5 3 2 Ta=75°C 25°C --25°C 1.0 0.01 2 3 5 7 0.1 2 3 Gate-to-Source Voltage, VGS -- V 100 7 IT00056 100 7 RDS(on) -- ID Drain Current, ID -- A IT00057 RDS(on) -- ID VGS=2.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 3 2 5 3 2 10 7 5 3 2 Ta=75°C 25°C --25°C 10 7 5 3 2 Ta=75°C 25°C --25°C 1.0 0.01 2 3 5 7 0.1 2 3 1.0 0.001 2 3 5 7 0.01 2 3 IT00059 Drain Current, ID -- A 14 IT00058 1.0 RDS(on) -- Ta Drain Current, ID -- A yfs -- ID Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS=10V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 12 10 8 6 .5V =2 V GS =4.0V A, 0m , V GS =3 I D 50mA I D= 5 Ta= --2 75°C °C 25°C 0.1 7 5 3 2 0.01 0.01 4 2 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 2 3 5 7 Ambient Temperature, Ta -- °C 0.1 2 3 IT00060 Drain Current, ID -- A IT00061 No.6459-3/5 MCH6604 5 3 IS -- VSD VGS=0V Switching Time, SW Time -- ns 1000 7 5 3 2 SW Time -- ID VDD=25V VGS=4V Source Current, IS -- A 2 td(off) tf Ta= 75° C 25 ° C 0.1 7 5 3 2 100 7 5 3 2 10 0.01 --25 °C tr td(on) 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT00062 2 3 5 7 100 7 5 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V Diode Forward Voltage, VSD -- V Drain Current, ID -- A 10 9 8 7 6 5 4 3 2 1 0.1 IT00063 VGS -- Qg VDS=10V ID=100mA Ciss, Coss, Crss -- pF 3 2 10 7 5 3 2 Ciss Coss Crss 0 5 10 15 20 25 30 35 40 45 50 1.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Drain-to-Source Voltage, VDS -- V 2 1.0 7 5 3 2 IT00064 1.0 Total Gate Charge, Qg -- nC IT00065 ASO PD -- Ta Allowable Power Dissipation, PD -- W IDP=1A 1m s PW≤10µs 100µs 0.8 M Drain Current, ID -- A ou ID=0.25A DC nt 10 10 op era ed ms on 0.6 ac er 0m am s ic bo 0.1 7 5 3 2 0.01 ar Operation in this area is limited by RDS(on). tio n 0.4 d( 90 0m m2 !0 0.2 .8m Ta=25°C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 10 2 3 5 m )1 un it 160 0 7 100 IT01739 0 20 40 60 80 100 120 140 1.0 Drain-to-Source Voltage, VDS -- V Ambient Temperature, Ta -- °C IT01740 No.6459-4/5 MCH6604 Note on usage : Since the MCH6604 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2006. Specifications and information herein are subject to change without notice. PS No.6459-5/5