MCH6627

Ordering number : ENN8000 MCH6627 MCH6627 Features • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 ±20 1.4 5.6 0.8 150 --55 to +150 P-channel -30 ±20 --1.0 --4.0 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.7A ID=0.7A, VGS=10V ID=0.4A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 30 1 ±10 1.2 0.6 1.1 230 400 65 14 8 5 4 11 3 300 560 2.6 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Symbol Conditions Ratings min typ max Unit Marking : WB Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2504 TS IM TB-00000453 No.8000-1/6 MCH6627 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=-1mA VDS=--10V, ID=-500mA ID=--500mA, VGS=-10V ID=--300mA, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--1A VDS=--10V, VGS=-10V, ID=--1A VDS=--10V, VGS=-10V, ID=--1A IS=--1A, VGS=0 --1.2 0.4 0.8 420 720 75 16 9 6 4 12 4 2.6 0.5 0.5 --0.89 --1.5 550 1000 --30 --1 ±10 --2.6 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A IS=1.4A, VGS=0 Ratings min typ 2.5 0.6 0.3 0.87 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2173A 0.25 Electrical Connection 6 0.3 4 2.1 1.6 5 4 0.15 5 6 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 0.25 32 0.65 2.0 0.07 1 6 5 4 (Bottom view) 0.85 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 1 2 3 1 2 3 (Top view) Switching Time Test Circuit [N-channel] VIN 10V 0V VIN PW=10µs D.C.≤1% ID=700mA RL=21.4Ω VOUT VDD=15V 0V --10V VIN PW=10µs D.C.≤1% ID= --500mA RL=30Ω VOUT [P-channel] VIN VDD= --15V D D G MCH6627 G MCH6627 P.G 50Ω S P.G 50Ω S No.8000-2/6 MCH6627 VDS=10V 25°C 75 ° 25° C C 3.5 4.0 IT03295 2.0 ID -- VDS V 6V 5V [Nch] 1.4 ID -- VGS Ta= -0 0.5 1.0 1.5 2.0 2.5 [Nch] 10 8V 4V Drain Current, ID -- A 1.2 Drain Current, ID -- A 1.5 1.0 0.8 1.0 VGS=3V 0.5 0.6 0.2 0 0 0.2 0.4 0.6 0.8 1.0 IT03294 0 25 3.0 Drain-to-Source Voltage, VDS -- V 800 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 800 [Nch] Ta=25°C RDS(on) -- Ta 75 °C °C --25 °C 0.4 Ta = [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 600 500 400 300 200 100 0 2 3 4 5 6 7 8 9 10 IT03296 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 600 500 400 300 200 100 0 --60 ID=0.4A 0.7A 0.4A I D= =4V , VGS =10V , VGS .7A I D=0 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 3 yfs -- ID Ambient Temperature, Ta -- °C 5 3 2 IT03297 Forward Transfer Admittance, yfs -- S [Nch] VDS=10V IF -- VSD [Nch] VGS=0 2 Forward Current, IF -- A 1.0 7 5 ° 25 C 1.0 7 5 3 2 0.1 7 5 3 2 = Ta 75 °C --2 5°C 3 2 0.1 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT03299 Drain Current, ID -- A 5 3 IT03298 SW Time -- ID [Nch] VDD=15V VGS=10V 100 7 5 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V Ta=75 °C 25°C --25°C [Nch] f=1MHz Switching Time, SW Time -- ns 2 Ciss, Coss, Crss -- pF td(off) 10 7 5 3 2 3 2 td(on) Coss 10 tr tf Crss 7 5 3 1.0 5 7 0.1 2 3 5 7 1.0 2 3 0 5 10 15 20 25 30 IT03301 Drain Current, ID -- A IT03300 Drain-to-Source Voltage, VDS -- V No.8000-3/6 MCH6627 10 VGS -- Qg VDS=10V ID=1.4A [Nch] 10 7 5 3 2 ASO IDP=5.6A [Nch]