MCH6635

Ordering number : ENN8217 MCH6635 P-Channel Silicon MOSFET MCH6635 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board(900mm2!0.8mm) 1unit Conditions Ratings --20 ±10 --0.8 --3.2 0.8 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=±8V, VDS=0 VDS=-10V, ID=--100µA VDS=-10V, ID=--400mA ID=--400mA, VGS=--4V ID=--200mA, VGS=--2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min --20 --1 ±10 --0.4 0.5 0.85 0.69 0.96 76 17.5 11 8.2 15 12 11.5 0.9 1.35 --1.3 typ max Unit V µA µA V S Ω Ω pF pF pF ns ns ns ns Marking : WK Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12805PE TS IM TB-00001041 No.8217-1/4 MCH6635 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--10V, VGS=-4V, ID=--800mA VDS=--10V, VGS=-4V, ID=--800mA VDS=--10V, VGS=-4V, ID=--800mA IS=--800mA, VGS=0 Ratings min typ 1.18 0.32 0.24 --0.95 --1.5 max Unit nC nC nC V Package Dimensions unit : mm 2173A 0.25 Electrical Connection 6 0.3 4 2.1 1.6 5 4 0.15 5 6 0.25 32 0.65 2.0 0.07 1 6 5 4 0.85 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 1 2 3 1 2 3 Switching Time Test Circuit VIN 0V --4V VIN PW=10µs D.C.≤1% ID= --400mA RL=25Ω VOUT VDD= --10V D G P.G 50Ω MCH6635 S V --6 .0V -5.0 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0 --0.1 --4 .0 V V --2.5 Drain Current, ID -- A --0.6 Drain Current, ID -- A --8. 0 --2.0V --0.4 VGS= --1.5V 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 25 °C --25 °C Ta = 75 °C --0.2 --1.5 C 25 75° °C C --2.0 --0.8 ID -- VDS V --0.8 ID -- VGS Ta= --25 ° --3 .0 V VDS= --10V --2.5 IT09183 Drain-to-Source Voltage, VDS -- V IT09180 Gate-to-Source Voltage, VGS -- V No.8217-2/4 MCH6635 2.0 1.8 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 --60 --40 --20 0 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 --2 --4 --6 --8 IT09184 ID= --0.2A --0.4A --0 I D= = --2 VGS .2A, .5V , VG 0.4A I D= -- --4. S= 0V 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 3 yfs -- ID Ambient Temperature, Ta -- °C --1.0 7 5 3 IT09185 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.001 VDS= --10V Forward Current, IF -- A 2 --0.1 7 5 3 2 °C 25 = Ta --2 C 5° 75 °C Ta=7 5°C 3 2 2 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 IT09186 --0.001 --0.3 --0.4 --0.5 --0.6 --0.7 --25°C --0.8 25°C --0.01 7 5 --0.9 --1.0 --1.1 --1.2 Drain Current, ID -- A 2 100 SW Time -- ID 3 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT09187 VDD= --10V VGS= --4V Ciss, Coss, Crss -- pF 2 Switching Time, SW Time -- ns 7 5 3 2 10 7 5 3 2 1.0 --0.01 10 7 5 2 3 5 7 --0.1 2 3 5 --1.0 IT09188 7 5 3 2 7 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 100 7 5 3 2 Ciss td (off) td(on) tf tr Coss Crss Drain Current, ID -- A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.2 0.4 0.6 0.8 1.0 VGS -- Qg Drain-to-Source Voltage, VDS -- V IT09189 ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --800mA Drain Current, ID -- A IDP= --3.2A