MCH6662

Ordering number : EN8999 MCH6662 SANYO Semiconductors DATA SHEET MCH6662 Features • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance Nch : RDS(on)1=120mΩ(typ.) 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Conditions Ratings 20 ±10 2.0 8.0 0.8 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7022A-006 2.0 6 5 4 0 t o 0.02 0.15 Product & Package Information • Package : MCPH6 • JEITA, JEDEC : SC-88, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 0.25 Packing Type : TL Marking LOT No. LOT No. 2.1 1.6 XP 0.25 1 0.65 2 3 0.3 TL 0.85 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 Electrical Connection 6 5 4 0.07 6 5 4 1 2 3 Top view http://semicon.sanyo.com/en/network 20812PE TKIM TC-00002705 No.8999-1/4 MCH6662 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=2A, VGS=0V VDS=10V, VGS=4.5V, ID=2A See specified Test Circuit. VDS=10V, f=1MHz Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1.0A, VGS=4.5V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V Ratings min 20 1 ±10 0.4 1.9 120 170 255 128 28 21 5.1 11 14.5 12 1.8 0.3 0.55 0.85 1.2 160 240 380 1.3 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Fig1. Switching Time Test Circuit 4.5V 0V VIN VDD=10V VIN PW=10μs D.C.≤1% G D ID=1.0A RL=10Ω VOUT P.G MCH6662 50Ω S 2.0 ID -- VDS 6.0V 4.5V 2.5V 1.8 V Ta=25°C 2.5 ID -- VGS VDS=10V Drain Current, ID -- A 1.5V 1.0 Drain Current, ID -- A 1.5 8.0V 2.0 1.5 1.0 75 °C 0.5 Ta = 0 0.2 0.4 0.6 0.8 1.0 1.2 0.5 VGS=1.2V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 25° C 1.4 1.6 --25 °C 1.8 2.0 Drain-to-Source Voltage, VDS -- V IT16372 Gate-to-Source Voltage, VGS -- V IT16373 No.8999-2/4 MCH6662 600 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=0.1A Ta=25°C 600 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 500 0.5A 1A 500 400 400 300 300 200 200 0.1A , I D= =1.8V V GS A I =0.5 2.5V, D V GS= 1.0A .5V, I D= V GS=4 100 100 0 0 1 2 3 4 5 6 7 8 9 10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID IT16712 10 7 5 3 2 Ambient Temperature, Ta -- °C IT16713 IS -- VSD Forward Transfer Admittance, | yfs | -- S 7 5 VDS=10V VGS=0V 2 1.0 7 5 3 2 0.1 0.01 °C -25 C =Ta 75° °C 25 Source Current, IS -- A 3 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 1000 7 5 SW Time -- ID 5 7 10 IT16643 0.001 Ta= 7 5°C 25°C --25° C 0.4 0.6 0.8 1.0 1.2 IT16377 VDD=10V VGS=4.5V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT16644 Ciss 100 7 5 3 2 10 tf td(off) td(on) tr Coss Crss 0 2 4 6 8 10 12 14 16 18 20 Drain Current, ID -- A 4.5 4.0 3.5 VGS -- Qg Drain-to-Source Voltage, VDS -- V 10 7 5 3 2 ASO IT16379 Gate-to-Source Voltage, VGS -- V VDS=10V ID=2A Drain Current, ID -- A IDP=8A (PW≤10μs) ID=2A 10 ms 10 0μ 1m s s 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.0 7 5 3 2 0.1 7 5 3 2 DC 10 op 0m s era tio n Operation in this area is limited by RDS(on). 0.01 0.1 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC IT16380 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16714 No.8999-3/4 MCH6662 1.0 PD -- Ta When mounted on ceramic substrate (900mm2×0.8mm) 1unit Allowable Power Dissipation, PD -- W 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16715 Note on usage : Since the MCH6662 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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