MCH6937

Ordering number : EN8040A MCH6937 SANYO Semiconductors DATA SHEET MCH6937 Features • TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density mounting. Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature [Common Rating] Total Dissipation Storage Temperature PT Tstg Mounted on a ceramic board (600mm2✕0.8mm) 0.55 --55 to +150 W °C VDSS VGSS ID IDP PD Tch Mounted on a ceramic board (600mm2✕0.8mm) 30 ±10 150 600 0.5 150 V V mA mA W °C VCBO VCEO VEBO IC ICP PC Tj Mounted on a ceramic board (600mm2✕0.8mm) -30 -30 --5 --300 --600 0.5 150 V V V mA mA W °C Symbol Conditions Ratings Unit Marking : EY Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30707 TI IM TC-00000563 / 12805EA TS IM TB-00001159 No.8040-1/6 MCH6937 Electrical Characteristics at Ta=25°C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [FET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0V 30 10 V µA µA V S 3.7 5.2 12.8 Ω Ω Ω pF pF pF ns ns ns ns nC nC nC 1.2 V ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=--30V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--10mA VCE=--10V, IC=--50mA VCB=--10V, f=1MHz IC=--100mA, IB=--5mA IC=--100mA, IB=--5mA IC=--10µA, IE=0A IC=--1mA, RBE=∞ IE=--10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --30 --30 -5 39 200 48 200 520 3 --110 --0.9 --220 --1.2 --100 --100 500 MHz pF mV V V V V ns ns ns nA nA Symbol Conditions Ratings min typ max Unit ±10 0.4 0.15 0.22 2.9 3.7 6.4 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.3 Package Dimensions unit : mm (typ) 7022A-017 2.0 0.15 Electrical Connection 6 0.25 5 4 6 5 4 0 to 0.02 1 : Source 2 : Gate 3 : Collector 4 : Emitter 5 : Base 6 : Drain Top view 2.1 1.6 0.25 1 0.65 2 3 0.3 1 2 3 0.85 1 2 3 1 : Source 2 : Gate 3 : Collector 4 : Emitter 5 : Base 6 : Drain SANYO : MCPH6 0.07 6 5 4 No.8040-2/6 MCH6937 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω RB + 220µF VBE=5V + 470µF MCH6937 PW=10µs D.C.≤1% VIN 4V 0V ID=80mA RL=187.5Ω VIN VDD=15V D RL VOUT G VCC= --12V P.G 50Ω S IC=20IB1= --20IB2= --100mA --200 --180 IC -- VCE --1 .6m A [TR] A --1.0mA --400 IC -- VBE Collector Current, IC -- mA --140 --120 --100 --80 --60 --40 --20 0 0 .8 --1 Collector Current, IC -- mA --160 mA m --1.4 1.2m A -- [TR] VCE= --2V --0.8mA --300 --2.0 m A --0.6mA --0.4mA --200 5°C 25°C --0.8 --0.2mA --100 IB=0mA --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 0 --0.2 --0.4 --0.6 --1.0 IT04097 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 IT04096 7 hFE -- IC Base-to-Emitter Voltage, VBE -- V [TR] VCE= --2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV VCE(sat) -- IC Ta= 7 5 3 2 --100 7 5 3 2 [TR] IC / IB=20 Ta=75°C 25°C DC Current Gain, hFE 3 --25°C 2 5 Ta=7 °C 100 7 5 --1.0 --25°C C 25° 2 3 5 7 --10 2 3 5 7 --100 2 3 5 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 --25° C 2 3 5 IT04099 2 3 5 IT04101 Collector Current, IC -- mA 3 IT04098 VBE(sat) -- IC Collector Current, IC -- mA 1000 [TR] IC / IB=20 Gain-Bandwidth Product, f T -- MHz fT -- IC [TR] VCE= --10V Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 7 5 2 3 --1000 Ta= --25°C 7 2 75°C 5 25°C 100 7 5 --1.0 3 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA IT04100 Collector Current, IC -- mA No.8040-3/6 MCH6937 10 Cob -- VCB [TR] f=1MHz 5 Ron -- IB f=1MHz IN 1kΩ 1kΩ IB [TR] OUT 3 Output Capacitance, Cob -- pF 7 2 5 ON-Resistance, Ron -- Ω 10 7 5 3 2 3 2 1.0 7 1.0 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT06066 Collector-to-Base Voltage, VCB -- V 0.6 IT04102 PC -- Ta Base Current, IB -- mA [TR] Collector Dissipation, PC -- W 0.5 M ou nt 0.4 ed on ac er 0.3 am ic bo ar d( 0.2 60 0m m2 ✕ 0.8 0.1 m m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 0.16 0.14 0.12 0.10 0.08 IT06744 ID -- VDS 2. 5V [FET] 0.30 ID -- VGS VDS=10V [FET] V Drain Current, ID -- A Drain Current, ID -- A V 6.0 0.15 VGS=1.5V 0.06 0.04 0.02 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.10 0.05 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT00030 Drain-to-Source Voltage, VDS -- V 10 9 IT00029 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 7 [FET] Ta=25°C RDS(on) -- ID 75 °C 0.20 25 VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 8 7 6 Ta=75°C 3 80mA 5 25°C --25°C ID=40mA 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 2 1.0 0.01 2 3 5 7 0.1 2 °C [FET] 3 5 IT00032 4.0V Gate-to-Source Voltage, VGS -- V IT00031 Drain Current, ID -- A Ta= --25 3.5V 3.0 2.0 V 0.25 °C No.8040-4/6 MCH6937 10 RDS(on) -- ID [FET] VGS=2.5V 3 RDS(on) -- ID [FET] VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 5 Ta=75°C 25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2 10 3 --25°C Ta=75°C 7 5 2 --25°C 25°C 3 1.0 0.01 2 3 5 7 0.1 2 3 5 IT00033 2 0.001 2 3 5 7 0.01 2 3 5 IT00034 Drain Current, ID -- A 7 RDS(on) -- Ta Drain Current, ID -- A 7 [FET] yfs -- ID [FET] VDS=10V Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 6 5 4 40 I D= mA , =2. V GS A, 5V 0V 3 °C --25 Ta= 75°C 25°C 3 80 I D= m =4. V GS 2 0.1 2 7 5 0.01 1 --60 --40 --20 0 20 40 60 80 100 120 140 160 2 3 5 7 0.1 2 3 5 IT00036 Ambient Temperature, Ta -- ¡C 5 3 IT00035 Drain Current, ID -- A 5 3 IS -- VSD [FET] VGS=0V SW Time -- ID [FET] VDD=15V VGS=4V Switching Time, SW Time -- ns Source Current, IS -- A 2 2 td (off) tf Ta = 25° C 0.1 7 5 3 2 75 °C 100 7 5 3 2 --25 °C tr td(on) 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT00037 10 0.01 2 3 5 7 0.1 2 IT00038 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V Drain Current, ID -- A 10 9 [FET] f=1MHz VGS -- Qg [FET] Gate-to-Source Voltage, VGS -- V VDS=10V ID=150mA 8 7 6 5 4 3 2 1 Ciss, Coss, Crss -- pF 10 7 5 3 2 Ciss Coss Crss 1.0 0 2 4 6 8 10 12 14 16 18 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V IT00039 Total Gate Charge, Qg -- nC IT00040 No.8040-5/6 MCH6937 0.6 PD -- Ta [FET] 0.6 0.55 PT -- Ta M [Common] Allowable Power Dissipation, PD -- W 0.5 ou Total Dissipation, PT -- W M 0.5 ou nt nt 0.4 ed ed on 0.4 on ac ac er 0.3 am er am ic bo 0.3 ic ar bo d( ar d 0.2 60 (6 0m m2 ✕ 0.2 00 m 0.1 0.8 m2 ✕ m 0. m )1 0.1 8m m un ) it 0 160 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C IT01118 Ambient Temperature, Ta -- °C IT07146 Note on usage : Since the MCH6937 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2007. Specifications and information herein are subject to change without notice. PS No.8040-6/6