PCP1104

Ordering number : ENA1347 PCP1104 SANYO Semiconductors DATA SHEET PCP1104 Applications • PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers. Features • • • • • • Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. High allowable power dissipation. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (450mm2×0.8mm) Tc=25°C Conditions Ratings -50 -50 -5 -1.5 -3 -200 1.3 3.5 150 -55 to +150 Unit V V V A A mA W W °C °C Marking : RG Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network N1208EA MS IM TC-00001720 No. A1347-1/4 PCP1104 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB= -40V, IE=0A VEB= -4V, IC=0A VCE= -2V, IC= -100mA VCE= -10V, IC= -300mA VCB= -10V, f=1MHz IC= -0.5A, IB= -10mA IC= -0.3A, IB= -6mA IC= -0.5A, IB= -10mA IC= -10μA, IE=0A IC= -1mA, RBE=∞ IE= -10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. -50 -50 -5 35 170 30 200 420 9 -280 -145 -0.81 -430 -220 -1.2 Ratings min typ max -0.1 -0.1 560 MHz pF mV mV V V V V ns ns ns Unit μA μA Package Dimensions unit : mm (typ) 7007A-004 Top View 4.5 1.6 1.5 Switching Time Test Circuit PW=50μs D.C.≤1% INPUT RB 50Ω 2.5 + 820μF VCC= --12V IC=--20IB1=20IB2=--0.5A 0.4 RL IB1 IB2 OUTPUT 1 0 .4 0.5 1.5 2 3 3.0 0.75 1.0 4.0 1 : Base 2 : Collector 3 : Emitter Bot t om View SANYO : PCP A --1.0 IC -- VCE --50 m 0m A 0 --3 --1.6 IC -- VBE VCE= --2V Collector Current, IC -- A Collector Current, IC -- A --0.8 --4 m A --20 mA A --10m 8mA -A --6m --1.4 --1.2 --1.0 --0.8 --0.6 --4mA --0.4 --0.2 --0.2 0 IB=0mA 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT14115 0 0 --0.2 --0.4 --0.6 Ta=7 5°C 25°C --25°C --0.8 --1.0 --0.4 --2mA --0.6 --1.2 IT14116 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V No. A1347-2/4 PCP1104 7 5 hFE -- IC VCE= --2V Gain-Bandwidth Product, f T -- MHz Ta=75°C 5 3 2 1000 7 5 3 2 100 7 5 3 2 --0.01 f T -- IC VCE= --10V DC Current Gain, hFE 3 2 25°C --25°C 100 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 100 7 Cob -- VCB IT14117 7 5 Collector Current, IC -- A VCE(sat) -- IC IT01649 f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=20 Output Capacitance, Cob -- pF 5 3 2 3 2 --0.1 7 5 3 2 25 °C 10 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT01651 7 Ta= 5°C 5°C --2 --0.01 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector-to-Base Voltage, VCB -- V 3 2 VCE(sat) -- IC Collector Current, IC -- A 3 VBE(sat) -- IC IT14118 IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --1.0 7 5 3 2 --0.1 7 5 3 2 --1.0 Ta=--25°C 7 5 25° C 75°C Ta= C --25° 75°C 25°C 3 2 --0.01 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 3 2 ASO IT14119 1.6 Collector Current, IC -- A PC -- Ta IT14111 ICP= --3A 10