PCP1203

Ordering number : ENA1348 PCP1203 SANYO Semiconductors DATA SHEET PCP1203 Applications • NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, Inverters, IGBT gate drivers. Features • • • • • • Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. High allowable power dissipation. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (450mm2×0.8mm) Tc=25°C Conditions Ratings 40 30 5 1.5 5 300 1.3 3.5 150 -55 to +150 Unit V V V A A mA W W °C °C Marking : QJ Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network N1208EA MS IM TC-00001722 No. A1348-1/4 PCP1203 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=30V, IE=0A VEB=4V, IC=0A VCE=2V, IC=100mA VCE=10V, IC=300mA VCB=10V, f=1MHz IC=0.75A, IB=15mA IC=0.75A, IB=15mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 40 30 5 35 205 30 200 500 8 150 0.85 225 1.2 Conditions Ratings min typ max 0.1 0.1 560 MHz pF mV V V V V ns ns ns Unit μA μA Package Dimensions unit : mm (typ) 7007A-004 Top View 4.5 1.6 1.5 Switching Time Test Circuit IB1 IB2 RB 50Ω 2.5 + 820μF VCC=12V 0.4 RL OUTPUT PW=50μs D.C.≤1% INPUT 1 0 .4 0.5 1.5 2 3 1.0 4.0 IC=20IB1= --20IB2=0.75A 3.0 0.75 1 : Base 2 : Collector 3 : Emitter Bot t om View SANYO : PCP 2.0 IC -- VCE mA 50 40mA 1.6 IC -- VBE VCE=2V 1.8 30mA 1.4 Collector Current, IC -- A Collector Current, IC -- A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 20mA 1.2 1.0 0.8 10mA 8mA 6mA 4mA 2mA 0.4 0.2 IB=0mA 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.2 0.4 0.6 Ta=7 5°C 25°C --25°C 0.8 1.0 0.6 1.2 IT14122 Collector-to-Emitter Voltage, VCE -- V IT14121 Base-to-Emitter Voltage, VBE -- V No. A1348-2/4 PCP1203 7 5 hFE -- IC VCE=2V Ta=75°C 3 2 f T -- IC VCE=10V Gain-Bandwidth Product, f T -- MHz 5 7 0.1 2 3 5 7 1.0 2 3 1000 7 5 3 2 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 2 1.0 IT01680 DC Current Gain, hFE 3 25°C --25°C 2 100 7 5 0.01 2 3 Collector Current, IC -- A 100 7 Cob -- VCB IT14123 5 Collector Current, IC -- A VCE(sat) -- IC f=1MHz 3 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 Output Capacitance, Cob -- pF 5 3 2 0.1 7 5 3 2 25 °C 10 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Ta= °C 75 5°C --2 0.01 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector-to-Base Voltage, VCB -- V 7 5 VCE(sat) -- IC IT01682 3 Collector Current, IC -- A VBE(sat) -- IC IT14124 IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 1.0 0.1 7 5 3 2 C 25° Ta=--25°C 7 5 C 75° Ta= C --25° 75°C 25°C 3 2 0.01 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 10 7 5 ASO 10 IT14125 1.6 Collector Current, IC -- A PC -- Ta IT14126 ICP=5A IC=1.5A 0m m ss C op