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PCP1208

PCP1208

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    PCP1208 - LED Back Light - Sanyo Semicon Device

  • 详情介绍
  • 数据手册
  • 价格&库存
PCP1208 数据手册
Ordering number : ENA1836 PCP1208 SANYO Semiconductors DATA SHEET PCP1208 Features • • • NPN Epitaxial Planar Silicon Transistor LED Back Light • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (450mm2×0.8mm) Tc=25°C Conditions Ratings 220 200 8 0.7 2 140 1.3 3.5 150 -55 to +150 Unit V V V A A mA W W °C °C Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 1.5 Product & Package Information • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1000 pcs./reel Packing Type : TD 2.5 1.0 4.0 Marking LOT No. 1 0.4 0.5 1.5 3.0 2 3 0.4 TD Electrical Connection 2 0.75 1 1 : Base 2 : Collector 3 : Emitter Bottom View 3 SANYO : PCP http://semicon.sanyo.com/en/network 12611CB TKIM TC-00002563 No. A1836-1/4 QO PCP1208 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=100V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA VCE=10V, IC=100mA VCB=10V, f=1MHz IC=0.35A, IB=35mA IC=0.35A, IB=35mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 220 200 8 50 2 70 200 120 9 115 0.82 200 1.2 Ratings min typ max 1 1 560 MHz pF mV V V V V ns μs ns Unit μA μA Switching Time Test Circuit PW=50μs D.C.≤1% INPUT RB 50Ω + 820μF VCC=100V RL IB1 IB2 OUTPUT IC=10IB1= --10IB2=0.3A 1.0 0.9 IC -- VCE 100mA 0.20 IC -- VCE 0μ A8 00 μA 80mA Collector Current, IC -- A 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 μA 600 μ 700 A 500μA 400μA Collector Current, IC -- A 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 60mA 50mA 40mA 30mA 20mA 4mA 6mA 8mA 90 1m A 300μA 200μA 10mA 100μA 2mA IB=0mA 0.9 1.0 IB=0μA 0 1 2 3 4 5 6 7 8 9 10 Collector-to-Emitter Voltage, VCE -- V 0.8 0.7 IC -- VBE IT15952 1000 7 5 3 2 Collector-to-Emitter Voltage, VCE -- V hFE -- IC IT15953 VCE=5V Ta=75°C VCE=5V Collector Current, IC -- A DC Current Gain, hFE 0.6 0.5 0.4 0.3 0.2 0.1 0 25°C --25°C 100 7 5 3 2 10 7 5 3 2 Ta= 75° C 25°C --25°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.0 0.01 2 3 5 7 0.1 2 3 5 Base-to-Emitter Voltage, VBE -- V IT15954 Collector Current, IC -- A 7 1.0 IT15955 No. A1836-2/4 PCP1208 100 7 5 3 2 hFE -- IC Ta=25°C Gain-Bandwidth Product, fT -- MHz 1000 7 5 3 2 fT -- IC VCE=10V DC Current Gain, hFE 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 1.0 0.5 V .0V =5 E VC V 2.0 V 100 7 5 3 2 10 0.01 0.1 2 3 5 Collector Current, IC -- A 100 7 Cob -- VCB 1.0 IT15956 7 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 1.0 7 VCE(sat) -- IC 7 1.0 IT15957 f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=10 Output Capacitance, Cob -- pF 5 3 2 5 3 2 10 7 5 3 2 1.0 0.1 0.1 7 5 3 2 0.01 0.01 7 Ta= 5°C °C --25 C 25° 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 10 7 5 VCE(sat) -- IC 5 7 100 IT15958 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 1.0 7 1.0 IT15959 VBE(sat) -- IC Ta= --25°C IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=10 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 5 25°C 75°C 3 ° Ta=75 C 25°C 2 --25°C 2 3 5 Collector Current, IC -- A 10 7 5 3 2 1.0 IT15960 7 0.1 0.01 2 3 5 7 0.1 2 3 5 ASO Collector Current, IC -- A 1.4 1.3 1.2 PC -- Ta 7 1.0 IT15961 Collector Current, IC -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 IC=0.7A D 10 C 0m 1m s s
PCP1208
1. 物料型号: - 型号:ENA1836

2. 器件简介: - 该器件为三洋半导体生产的NPN外延平面硅晶体管,用于LED背光。

3. 引脚分配: - 封装类型:PCP - JEITA, JEDEC标准:SC-62, SOT-89, TO-243

4. 参数特性: - 集电极-发射极电压(VCEO):200V - 集电极电流(IC):0.7A - 低集电极-发射极饱和电压(VCE(sat)):0.115V(典型值,IC=0.35A) - 高速开关(tf):70ns(典型值,IC=0.3A)

5. 功能详解: - 该晶体管具有高速开关特性,允许高功耗,并且符合无卤素标准。

6. 应用信息: - 适用于需要高速开关和高功耗应用的场景。

7. 封装信息: - 封装尺寸:7007B-004 - 最小包装数量:1000 pcs./reel - 包装类型:TD Marking
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