SBE602

Ordering number : EN8965 SBE602 SANYO Semiconductors DATA SHEET SBE602 Applications • Schottky Barrier Diode (Twin Type • Cathode Common) 30V, 70mA Rectifier High frequency rectification (switching regulators, converters, choppers). Features • • • • • Low forward voltage (VF max=0.55V). Fast reverse recovery time (trr max=10ns). Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall-sized package permitting SBE602-applied sets to be made small and slim. Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions Ratings 30 35 70 2 --55 to +125 --55 to +125 Unit V V mA A °C °C Electrical Characteristics at Ta=25°C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Therrmal Resistance Symbol VR VF IR1 IR2 C trr Rth(j-a) IR=20µA IF=70mA VR=2V VR=15V VR=10V, f=1MHz IF=IR=10mA, See specified Test Circuit. Mounted in Cu-foiled area of 0.72mm2!0.03mm on glass epoxy board 5.5 10 300 Conditions Ratings min 30 0.55 75 5.0 typ max Unit V V nA µA pF ns °C / W Marking : SQ Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1806SB SY IM TC-00000234 No.8965-1/3 SBE602 Package Dimensions unit : mm (typ) 7019A-002 2 1 Electrical Connection 2.0 0.25 0.15 3 2.1 1.6 0 to 0.02 3 1 : Anode 2 : Anode 3 : Cathode Top view 1 0.25 0.65 2 0.3 0.85 0.07 1 : Anode 2 : Anode 3 : Cathode SANYO : MCPH3 trr Test Circuit Duty≤10% 10mA 50Ω 10µs 100Ω 10Ω --5V trr 3 2 0.1 7 5 3 2 0.01 7 5 100 10mA 1mA IF -- VF 1000 IR -- VR Ta=125°C Reverse Current, IR -- µA Forward Current, IF -- A 100°C 10 75°C 1.0 50°C 25°C 5°C 100 °C 75° C 50°C 25°C 0°C --25° C 3 2 0.001 0 0.1 Ta= 12 0.01 0.2 0.3 0.4 0.5 0.6 0.7 IT11425 0 5 10 15 20 25 30 35 IT11426 0.1 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0 0 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO Reverse Voltage, VR -- V 4.0E--06 3.5E--06 3.0E--06 2.5E--06 2.0E--06 PR(AV) -- VR Rectangular wave θ 360° (1) (2) (4) (3) (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave V 360° θ R 180° VR 360° (1) (2) (3) Sine wave 180° 360° Sine wave 1.5E--06 1.0E--06 5.0E--07 0.0E+00 0 5 10 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 (4) 15 20 25 30 35 IT11428 Average Output Current, IO -- A IT11427 Peak Reverse Voltage, VR -- V No.8965-2/3 SBE602 3 C -- VR Surge Forward Current, IFSM(Peak) -- A f=1MHz 2.8 IFSM -- t Current waveform 50Hz sine wave IS 20ms t Interterminal Capacitance, C -- pF 2 2.4 2.0 10 7 5 1.6 1.2 0.8 3 0.4 0 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Reverse Voltage, VR -- V IT11429 Time, t -- s ID00235 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. PS No.8965-3/3