SBE818

Ordering number : ENA1379 SBE818 SANYO Semiconductors DATA SHEET SBE818 Applications • Low IR Schottky Barrier Diode 30V, 2.0A Rectifier High frequency rectification (switching regulators, converters, choppers). Features • • • • • Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting. Small switching noise. Low forward voltage (IF=2.0A, VF max=0.62V). Low reverse current (VR=15V, IR max=7.5μA). Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm). Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 30 30 When mounted on ceramic substrate, Rectangular wave 180°C When mounted on glass epoxy substrate 50Hz sine wave, 1 cycle 2.0 1.5 20 --55 to +125 --55 to +125 Unit V V A A A °C °C VRSM IO IFSM Tj Tstg Marking : SC *: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3 and Terminal 5 (or 6). Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network D0308SB MS IM TC-00001737 No. A1379-1/4 SBE818 Electrical Characteristics at Ta=25°C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF1 VF2 VF3 IR C trr Rth(j-a)1 Rth(j-a)2 IR=1mA IF=1.0A IF=1.5A IF=2.0A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. When mounted in Cu-foiled area of 0.96mm2×0.03mm on glass epoxy substrate When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings min 30 0.48 0.53 0.57 30 10 100 65 0.53 0.58 0.62 7.5 typ max Unit V V V V μA pF ns °C / W °C / W Package Dimensions unit : mm (typ) 7045-004 Electrical Connection 1 : Anode1 2 : NC 3 : Anode2 4 : Anode2(NC) 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 Top view 8 0.2 0.2 8 5 0.125 7 6 5 1.7 2.1 1 2 3 4 1 0.5 2.0 4 0.2 1 : Anode1 2 : NC 3 : Anode2 4 : Anode2(NC) 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 SANYO : EMH8 trr Test Circuit Duty≤10% 100mA 100mA 10mA 50Ω 10μs 0.05 0.75 *: Terminal 4 is used for the purposes such as test. Although it is connected to Anode 2, please handle it as NC Terminal 100Ω 10Ω --5V trr No. A1379-2/4 SBE818 3 2 1E+00 7 5 3 2 IF -- VF 1E+04 1E+03 IR -- VR Ta=125°C 100°C 75°C Forward Current, IF -- μA Reverse Current, IR -- μA 1E+02 1E+01 1E+00 1E-01 1E-02 1E-03 50°C 3 2 Ta =1 100 25°C °C 75° C 50° C 25 ° C 0°C --25 °C 1E-01 7 5 25°C 0°C 1E-02 7 5 3 2 --25°C 1E-03 0 0.1 0.2 0.3 0.4 0.5 0.6 IT14256 1E-04 0 5 10 15 20 25 30 IT14257 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO (1) Reverse Voltage, VR -- V 5.0E--05 4.5E--05 4.0E--05 3.5E--05 3.0E--05 2.5E--05 2.0E--05 1.5E--05 1.0E--05 VR PR(AV) -- VR (4) (2) (3) (5) (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave VR 360° θ (1) (2) Rectangular wave θ 360° (3) 180° 360° Sine wave (4) Sine wave 180° 360° 2.0 2.5 IT14258 5.0E--06 0.0E+00 0 5 10 15 20 25 30 35 IT14259 Average Output Current, IO -- A 150 Ta -- IO Average Reverse Voltage, VR -- V 150 Ambient Temperature, Ta -- °C 100 Ambient Temperature, Ta -- °C 125 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC Ta -- IO 125 100 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC Rectangular wave 75 θ 50 360° 75 Rectangular wave θ 360° 50 25 Sine wave 0.2 (3) (1) 0.6 0.8 1.0 1.2 Sine wave 180° 180° 360° 0.4 (2) 1.4 (4) 1.6 (5) 1.8 2.0 25 (1) 0.5 1.0 0 0 0 360° 0 (2) (4) 1.5 (3) (5) 2.0 2.5 IT14261 Average Output Current, IO -- A 5 3 2 IT14260 24 C -- VR Average Output Current, IO -- A IFSM -- t IS Surge Forward Current, IFSM(Peak) -- A f=1MHz Interterminal Capacitance, C -- pF Current waveform 50Hz sine wave 20 16 20ms t 100 7 5 3 2 12 8 4 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Reverse Voltage, VR -- V IT13217 Time, t -- s IT13214 No. A1379-3/4 SBE818 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice. PS No. A1379-4/4