SCH1343

Ordering number : ENA1994 SCH1343 SANYO Semiconductors DATA SHEET SCH1343 Features • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=55mΩ(typ.) 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --20 ±10 --3.5 --14 1 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7028-002 1.6 0.05 0.2 654 0.2 Product & Package Information • Package : SCH6 • JEITA, JEDEC : SOT-563 • Minimum Packing Quantity : 5,000 pcs./reel Packing Type : TL Marking LOT No. LOT No. 1.6 1.5 YU 0.05 1 2 0.56 3 0.5 TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 Electrical Connection 1, 2, 5, 6 0.25 3 4 http://semicon.sanyo.com/en/network N1611PE TKIM TC-00002663 No. A1994-1/4 SCH1343 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=--3.5A, VGS=0V VDS=--10V, VGS=--4.5V, ID=--3.5A VDS=--10V, f=1MHz Conditions ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--2A ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.5A, VGS=--1.8V Ratings min --20 --1 ±10 --0.4 6 55 78 115 1220 82 72 8.8 See specified Test Circuit. 35 123 61 11 1.9 1.9 --0.83 --1.2 72 110 173 --1.3 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN VDD= --10V 0V --4.5V VIN PW=10μs D.C.≤1% G D ID= --2A RL=5Ω VOUT P.G SCH1343 50Ω S --3.5 ID -- VDS V --2.5V --8.0V --4.5V --7.0 --6.5 --6.0 --5.5 ID -- VGS Ta= --2 5°C 75°C --3.0 --1.8V Drain Current, ID -- A Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 --5.0 --4.5 --4.0 --3.5 --3.0 --2.5 --1.5 --1.0 --0.5 0 --2.0 --1.4V VGS= --1.3V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 25° --25° C C --1.5V Ta= 7 5°C --2.0 --2.5 25°C VDS= --10V --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V IT16652 Gate-to-Source Voltage, VGS -- V IT16653 No. A1994-2/4 SCH1343 250 RDS(on) -- VGS --1.0A --2.0A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --0.5A Ta=25°C 250 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 200 150 150 100 100 --0.5A ,I = --1.8V D V GS= --1.0A V, I D= = --2.5 V GS = --2.0A 4.5V, I D V GS= -- 50 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID IT16654 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Ambient Temperature, Ta -- °C IS -- VSD IT16655 Forward Transfer Admittance, | yfs | -- S 7 5 VDS= --10V VGS=0V 2 = Ta 1.0 7 5 3 2 0.1 --0.01 --2 C 5° 75 °C 25 °C Source Current, IS -- A 3 Ta=75 ° 0 --0.2 --0.4 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 1000 7 5 5 7 --10 IT16656 --0.01 --25°C --0.6 25°C --0.8 C --1.0 --1.2 --1.4 SW Time -- ID VDD= --10V VGS= --4.5V td(off) tf 10000 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT16657 f=1MHz Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Ciss, Coss, Crss -- pF Ciss 1000 7 5 3 2 100 7 5 3 2 10 0 --5 --10 --15 --20 IT16659 tr td(on) Coss Crss Drain Current, ID -- A --4.5 --4.0 --3.5 VGS -- Qg IT16658 --100 7 5 3 2 Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --3.5A IDP= --14A (PW≤10μs) Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --3.5A DC 10 100 1m μs s ms 10 op 0m s on er ati Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 5 7--0.1 23 5 7--1.0 23 5 7--10 23 --0.01 --0.01 2 3 Total Gate Charge, Qg -- nC IT16660 Drain-to-Source Voltage, VDS -- V 57 --100 IT16661 No. A1994-3/4 SCH1343 1.2 PD -- Ta When mounted on ceramic substrate (900mm2×0.8mm) Allowable Power Dissipation, PD -- W 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16662 Note on usage : Since the SCH1343 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2011. Specifications and information herein are subject to change without notice. PS No. A1994-4/4