SCH1404

Ordering number : ENN8103 SCH1404 N-Channel Silicon MOSFET SCH1404 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 30 ±20 2.5 10 0.8 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=10V ID=1A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 30 1 ±10 1.2 1.8 3.0 84 125 180 42 25 7.0 2.8 18.5 4.4 110 175 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : KD Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2404PE TS IM TB-0000167 No.8103-1/4 SCH1404 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=10V, ID=2.5A VDS=10V, VGS=10V, ID=2.5A VDS=10V, VGS=10V, ID=2.5A IS=2.5A, VGS=0 Ratings min typ 4.9 0.93 0.63 0.85 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2221A 1.6 0.05 Switching Time Test Circuit VIN 10V 0V VDD=15V 0.2 654 0.2 PW=10µs D.C.≤1% VIN ID=1.5A RL=10Ω D VOUT 1.6 1.5 0.05 1 2 3 0.5 0.56 G 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 SCH1404 P.G 50Ω S 0.25 4.0 ID -- VDS 5.0V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 ID -- VGS 5°C Ta= -2 75°C 3.6 3.2 Drain Current, ID -- A 6.0V 8.0V 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 0 3. V Ta=7 5°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 25 °C --25°C VGS=2.5V Drain Current, ID -- A 10.0 V 3.0 25°C 3.5 4.0 VDS=10V V 4.0 4.5 Drain-to-Source Voltage, VDS -- V 250 IT02942 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 250 IT02943 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 200 150 1.5A ID=1.0A 150 1.0A I D= I D=1.5 =4V , VGS 100 100 =10V A, V GS 50 50 0 0 2 4 6 8 10 12 14 16 18 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT08154 Ambient Temperature, Ta -- °C IT08155 No.8103-2/4 SCH1404 10 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IF -- VSD VGS=0 C 25° 1.0 7 5 3 2 = Ta --2 C 5° 75° C Forward Current, IF -- A Ta=7 5°C 25°C 0.3 0.4 0.5 0.6 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0.01 0.2 --25° C 0.7 0.8 0.9 1.0 1.1 1.2 Drain Current, ID -- A 100 7 IT02946 1000 7 5 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT02947 Switching Time, SW Time -- ns 5 3 2 VDD=15V VGS=10V Ciss, Coss, Crss -- pF 3 2 td(off) Ciss 10 7 5 3 2 td(on) tf 100 7 5 Coss 3 2 10 tr Crss 1.0 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 9 10 IT02948 2 10 7 5 7 0 5 10 15 20 25 30 IT02949 Drain-to-Source Voltage, VDS -- V VGS -- Qg ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=2.5A Drain Current, ID -- A IDP=10A