SCH1416

Ordering number : ENN7725 SCH1416 SCH1416 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±20 2 8 0.8 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=0.5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 20 1 ±10 1.2 0.84 1.4 120 310 77 29 21 6.5 3 10.5 4.2 160 440 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : KR Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53104 TS IM TA-100780 No.7725-1/4 SCH1416 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=10V, ID=2A VDS=10V, VGS=10V, ID=2A VDS=10V, VGS=10V, ID=2A IS=2A, VGS=0 Ratings min typ 2.9 0.7 0.4 0.88 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2221 Top View 1.6 Side View 0.2 Switching Time Test Circuit VIN 10V 0V VIN PW=10µs D.C.≤1% VDD=10V 654 0.15 D ID=1A RL=10Ω VOUT 1.6 1.5 0.05 0.05 1 23 0.5 Bottom View 0.25 Side View 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 G P.G 50Ω S SCH1416 0.56 2.0 ID -- VDS 10V 2.0 ID -- VGS Ta= --25 °C 75° C 1.5 2.0 2.5 1.8 V 6.0 4.0 V 1.6 1.6 Drain Current, ID -- A Drain Current, ID -- A 3.5 1.2 V 1.4 1.2 1.0 0.8 0.8 0.4 0.4 0.2 0 1.0 0 0.5 1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 25 VGS=2.5V Drain-to-Source Voltage, VDS -- V 800 Ta= 7 3.0V 5°C °C --2 5°C 0.6 3.0 3.5 4.0 25° 4.5 IT06918 140 160 IT06920 VDS=10V IT06917 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 600 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=1.0A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 600 500 0.5A 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 400 .5A I D=0 300 =4V , VGS 200 0V , V S=1 I D=1.0A G 100 0 --60 --40 --20 0 20 40 60 80 100 120 Gate-to-Source Voltage, VGS -- V IT06919 Ambient Temperature, Ta -- °C No.7725-2/4 C SCH1416 3 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 2 1.0 7 5 3 2 0.1 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IF -- VSD VGS=0 C 5° --2 °C = 75 Ta Forward Current, IF -- A 25 °C 3 2 23 5 7 0.01 23 5 7 0.1 23 5 7 1.0 23 5 0.01 0.3 0.4 0.5 0.01 0.001 Ta= 75°C 25°C --25°C 0.6 0.7 0.8 0.1 7 5 0.9 1.0 1.1 1.2 Drain Current, ID -- A 3 2 IT06921 3 2 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT06922 VDD=10V VGS=10V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 100 7 5 3 2 100 7 5 tf td(off) Ciss 10 7 5 3 2 1.0 0.01 td(on) 3 2 Coss tr Crss 10 2 3 5 7 0.1 2 3 5 Drain Current, ID -- A 10 9 1.0 IT06923 10 7 5 3 2 7 0 2 4 6 8 10 12 14 16 18 20 VGS -- Qg Drain-to-Source Voltage, VDS -- V IT06924 ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=2A Drain Current, ID -- A IDP=8A ID=2A 10