SCH2816

Ordering number : ENN8080 SCH2816 SCH2816 Features • • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • Composite type with an N-channel silicon MOSFET (SCH1416) and a Schottky barrier diode (SS05015) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 0.5 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 20 ±20 1.6 6.4 0.6 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : QR Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81004 TS IM TA-4249 No.8080-1/6 SCH2816 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=0.5mA IF=0.5A VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 15 0.4 13 10 0.44 90 V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=800mA ID=800mA, VGS=10V ID=400mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=1.6A VDS=10V, VGS=10V, ID=1.6A VDS=10V, VGS=10V, ID=1.6A IS=1.6A, VGS=0 1.2 0.72 1.2 120 310 77 29 21 6.5 3 10.8 4.4 2.9 0.7 0.4 0.86 1.2 160 440 20 1 ±10 2.6 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2230A 1.6 0.05 0.2 654 0.2 Electrical Connection 6 5 4 1.6 1.5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain Top view 0.05 1 2 3 0.5 0.56 1 2 3 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 0.25 No.8080-2/6 SCH2816 Switching Time Test Circuit [MOSFET] trr Test Circuit [SBD] VIN 10V 0V VIN PW=10µs D.C.≤1% VDD=10V Duty≤10% 100mA ID=800mA RL=12.5Ω D VOUT 10µs G --5V trr SCH2816 P.G 50Ω S 2.0 ID -- VDS 10V [MOSFET] 2.0 ID -- VGS VDS=10V 100mA 50Ω 100Ω 10Ω [MOSFET] Ta= --25 °C 75° C 1.5 2.0 1.8 V 6.0 4.0 V 1.6 1.6 Drain Current, ID -- A Drain Current, ID -- A 3.5 1.2 V 1.4 1.2 1.0 0.8 0.8 0.4 0.4 0.2 0 1.0 0 0.5 1.0 VGS=2.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ta= 7 3.0V 5 °C 25 °C --2 5°C 0.6 2.5 3.0 3.5 4.0 25° 4.5 140 160 IT07351 800 Drain-to-Source Voltage, VDS -- V IT06917 RDS(on) -- VGS [MOSFET] Ta=25°C 600 Gate-to-Source Voltage, VGS -- V IT06918 RDS(on) -- Ta [MOSFET] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=800mA 600 500 400mA 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 400 00mA I D=4 300 =4V , VGS 200 A I D=800m 100 , V GS=1 0V 0 --60 --40 --20 0 20 40 60 80 100 120 Gate-to-Source Voltage, VGS -- V IT07350 Ambient Temperature, Ta -- °C No.8080-3/6 C 10mA SCH2816 3 yfs -- ID VDS=10V °C [MOSFET] Forward Transfer Admittance, yfs -- S 2 1.0 7 5 3 2 0.1 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IF -- VSD [MOSFET] VGS=0 = Ta --2 5 °C °C 75 Forward Current, IF -- A 25 Ta= 7 0.4 0.5 0.6 5°C 0.7 0.01 0.001 23 5 7 0.01 23 5 7 0.1 23 5 7 1.0 23 5 0.01 0.3 --25°C 0.8 25°C 0.9 1.0 1.1 1.2 Drain Current, ID -- A 3 2 IT06921 SW Time -- ID [MOSFET] VDD=10V VGS=10V Ciss, Coss, Crss -- pF 3 2 IT06922 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Switching Time, SW Time -- ns 100 7 5 3 2 100 7 5 tf td(off) Ciss 10 7 5 3 2 1.0 0.01 td(on) 3 2 Coss tr Crss 10 2 3 5 7 0.1 2 3 5 Drain Current, ID -- A 10 9 1.0 IT06923 10 7 5 3 2 7 0 2 4 6 8 10 12 14 16 18 20 VGS -- Qg [MOSFET] IT06924 Drain-to-Source Voltage, VDS -- V ASO [MOSFET] Gate-to-Source Voltage, VGS -- V VDS=10V ID=1.6A Drain Current, ID -- A