SCH2819

Ordering number : ENN8291 SCH2819 SCH2819 Features • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 0.5 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 30 ±12 1.5 6 0.6 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : QU Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005PE MS IM TB-00001351 No.8291-1/6 SCH2819 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=0.5mA IF=0.5A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 30 0.42 13 10 0.48 120 V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=800mA ID=800mA, VGS=4V ID=400mA, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=1.5A VDS=10V, VGS=4V, ID=1.5A VDS=10V, VGS=4V, ID=1.5A IS=1.5A, VGS=0V 0.4 1.3 2.2 165 210 130 22 16 9 20 23 29 2.2 0.52 0.52 0.9 1.2 215 295 30 1 ±10 1.3 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 7028-003 Electrical Connection 6 1.6 5 4 0.05 0.2 654 0.2 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain Top view 1.6 1.5 1 0.05 2 3 1 23 0.5 0.56 0.25 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 No.8291-2/6 SCH2819 Switching Time Test Circuit [MOSFET] trr Test Circuit [SBD] VIN 4V 0V VIN PW=10µs D.C.≤1% VDD=15V Duty≤10% 100mA 10mA trr ID=800mA RL=18.75Ω D VOUT G --5V SCH2819 P.G 50Ω S 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 ID -- VDS 3.0V [MOSFET] 2.0 1.8 1.6 ID -- VGS VDS=10V Ta= --25 °C 75° C 1.0 100mA 10µs 50Ω 100Ω 10Ω [MOSFET] Drain Current, ID -- A 2.5 V Drain Current, ID -- A 4.0V 1.5V 1.4 1.2 1.0 0.8 0.6 0.4 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 25 VGS=1.0V Drain-to-Source Voltage, VDS -- V IT06102 RDS(on) -- VGS [MOSFET] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.2 °C -25°C Ta= 75° C 1.5 2.0 25 °C 2.5 500 500 450 400 350 300 250 200 150 100 50 0 --60 --40 IT06103 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 450 400 350 300 ID=800mA 400mA 250 200 150 100 50 0 0 2 4 6 8 10 IT06104 V =2.5 VGS =4.0V I D= , VGS 0mA 0 I D=8 A, 400m --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C IT06105 No.8291-3/6 SCH2819 10 yfs -- ID [MOSFET] Forward Transfer Admittance, yfs -- S 7 5 VDS=10V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IS -- VSD [MOSFET] VGS=0V 2 C 25° 1.0 7 5 3 2 5 °C --2 C Ta= 75° Source Current, IS -- A 3 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0.01 0.2 0.3 0.4 0.5 Ta= 7 5 °C 25° C --25 °C 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Drain Current, ID -- A 1000 7 5 IT06106 SW Time -- ID [MOSFET] VDD=15V VGS=4V 1000 7 5 IT06107 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Switching Time, SW Time -- ns 3 100 7 5 3 2 10 7 5 3 2 1.0 0.01 Ciss, Coss, Crss -- pF 2 3 2 Ciss 100 7 5 3 2 10 td(off) tf td(on) tr Coss Crss 0 5 10 15 20 25 30 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 5 7 10 IT06108 10 7 5 3 2 VGS -- Qg [MOSFET] Gate-to-Source Voltage, VGS -- V VDS=10V ID=1.5A Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V IT06109 ASO [MOSFET] IDP=6A