Ordering number : ENN8368
SCH2821
SCH2821
Features
• •
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications
•
Composite type with an N-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 0.5 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 20 ±12 1.6 6.4 0.6 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit
Marking : QW
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63005PE MS IM TB-00001455 No.8368-1/6
SCH2821
Electrical Characteristics at Ta=25°C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=0.5mA IF=0.5A VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 15 0.4 13 10 0.46 90 V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±9.6V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=800mA ID=800mA, VGS=10V ID=400mA, VGS=4.5V ID=400mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=1.6A VDS=10V, VGS=10V, ID=1.6A VDS=10V, VGS=10V, ID=1.6A IS=1.6A, VGS=0V 1.2 0.9 1.5 90 130 145 158 36 27 6.6 9.8 24.5 10 4.9 0.61 0.74 0.81 1.2 120 185 210 20 1 ±10 2.6 V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Package Dimensions unit : mm 7028-003
1.6 0.05 0.2
Electrical Connection
6 5 4
654
0.2
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain
Top view
1.6
1.5
1
1 23 0.5
0.56
2
3
0.05
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6
0.25
No.8368-2/6
SCH2821
Switching Time Test Circuit
[MOSFET]
trr Test Circuit
[SBD]
VIN 10V 0V VIN PW=10µs D.C.≤1%
VDD=10V
Duty≤10% 100mA 10mA trr
ID=800mA RL=12.5Ω
10µs
G
--5V
SCH2821 P.G 50Ω
S
8.0V 6.0V
.5V 4 .0V
1.6
ID -- VDS
=2 V GS
[MOSFET]
1.6
ID -- VGS
VDS=10V
100mA
D
VOUT
50Ω
100Ω
10Ω
[MOSFET]
3.0
.5V
1.4 1.2 1.0 0.8 0.6
Drain Current, ID -- A
0.8
Drain Current, ID -- A
10V
1.2
5.0
V4
V
°C
0.4 0.2 0 0 0.5 1.0 1.5 2.0
0.4
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
2.5
25°C --2 5°C
3.0
Ta=7 5
3.5
300
Drain-to-Source Voltage, VDS -- V IT09848 RDS(on) -- VGS [MOSFET] Ta=25°C
300
Gate-to-Source Voltage, VGS -- V IT09849 RDS(on) -- Ta [MOSFET]
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
250
250
ID=0.8A
200
200
0.4A
150
150
I D=
100
100
V =4.5 VGS 4A, 0. I D= =10V A, V GS I D=0.8
, VG 0.4A
4V S=
50
50
0 0 2 4 6 8 10 IT09850
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
IT09851
No.8368-3/6
SCH2821
3
yfs -- ID
VDS=10V
25
C 5°
[MOSFET]
Forward Transfer Admittance, yfs -- S
2 1.0 7 5 3 2 0.1 7 5 3 2
7 5 3
IS -- VSD
[MOSFET] VGS=0V
°C
2
Source Current, IS -- A
= Ta
--2
1.0 7 5 3 2 0.1 7 5 3 2
75
°C
5°C
0.01 0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
Drain Current, ID -- A
3 2
5 7 1.0 2 IT09852
0.01 0.4
0.5
0.6
0.7
--25° C
0.8
Ta= 7
25°C
0.9
1.0
1.1
SW Time -- ID
[MOSFET] VDD=10V VGS=10V
Ciss, Coss, Crss -- pF
5 3 2
IT09853 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET]
f=1MHz
Switching Time, SW Time -- ns
100 7 5 3 2
Ciss
td(off)
100 7 5 3 2
tf
10 7 5 3 2 1.0 0.01
td(on)
Coss Crss
tr
10 2 3 5 7 0.1 2 3 5
Drain Current, ID -- A
10 9
1.0 IT09854 10 7 5 3 2
7
0
2
4
6
8
10
12
14
16
18
20
VGS -- Qg
[MOSFET]
IT09855 Drain-to-Source Voltage, VDS -- V ASO [MOSFET]
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=1.6A
Drain Current, ID -- A
IDP=6.4A
1m
10
