SFT1102

Ordering number : ENA1167 SFT1102 SANYO Semiconductors DATA SHEET SFT1102 Applications • PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / DC converters, relay drivers, lamp drivers, motor drivers. Features • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings --150 --150 --150 --7 --2 --3 --400 1 15 150 --55 to +150 Unit V V V V A A mA W W °C °C Marking : T1102 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73008EA TI IM TC-00001474 No. A1167-1/4 SFT1102 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=-80V, IE=0A VEB=-4V, IC=0A VCE=-5V, IC=--100mA VCE=-10V, IC=--100mA VCB=-10V, f=1MHz IC=-1A, IB=--100mA IC=-0.5A, IB=--50mA IC=-1A, IB=--100mA IC=- μA, IE=0A -10 IC=-100μA, RBE=0Ω IC=-1mA, RBE=∞ IE=--10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 200 70 20 --200 --100 -0.85 --150 --150 --150 --7 55 840 40 --400 --200 --1.2 Ratings min typ max --1 --1 560 MHz pF mV mV V V V V V ns ns ns Unit μA μA Package Dimensions unit : mm (typ) 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm (typ) 7003-003 0.5 4 4 5.5 7.0 1.5 6.5 5.0 2.3 0.5 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 5.5 7.0 0.85 0.5 1.2 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT VR 50Ω RB + 220μF VBE=5V + 470μF VCC= --75V RL IB1 IB2 OUTPUT IC= --10IB1=10IB2= --0.7A No. A1167-2/4 SFT1102 --500mA --2.0 IC -- VCE A 0m --5 0 --2.0 IC -- VCE --16 0mA --120m A A --100m 0mA --8 --60mA --40mA --20mA --10mA --5mA --25 0m A --200mA --160mA Collector Current, IC -- A Collector Current, IC -- A --1.5 --120mA --80mA --60mA --40mA --1.5 --1.0 --1.0 --100mA --0.5 --25 0mA -- 200m A --20mA --10mA --5mA IB=0mA 0 --0.1 --0.2 --0.3 --0.4 --0.5 IT13557 --0.5 0 0 0 --1 --2 --3 --4 IB=0mA --5 IT13558 Collector-to-Emitter Voltage, VCE -- V --2.5 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 7 hFE -- IC VCE= --5V --2.0 5 3 Ta=75°C VCE= --5V Collector Current, IC -- A --1.5 DC Current Gain, hFE 2 25°C --25°C 100 7 5 3 2 --1.0 --0.5 Ta=7 5 °C 25°C --25°C 10 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT13559 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Base-to-Emitter Voltage, VBE -- V 100 Collector Current, IC -- A IT13560 fT -- IC Cob -- VCB f=1MHz VCE= --10V Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 100 7 5 5 3 3 2 2 10 7 10 --0.01 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector Current, IC -- A 3 2 IT13561 3 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 5 7 --100 IT13562 VBE(sat) -- IC IC / IB=10 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --1.0 Ta=--25°C 7 5 25°C 75°C 25°C Ta=75°C --25°C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 --0.01 --0.01 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --10 2 3 Collector Current, IC -- A IT13563 Collector Current, IC -- A IT13564 No. A1167-3/4 SFT1102 5 3 2.5 2 ASO ICP= --3A