SFT1201

Ordering number : ENA1168 SFT1201 SANYO Semiconductors DATA SHEET SFT1201 Applications • NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings 150 150 120 7 2.5 4 500 1 15 150 --55 to +150 Unit V V V V A A mA W W °C °C Marking : T1201 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73008EA TI IM TC-00001476 No. A1168-1/4 SFT1201 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=100V, IE=0A VEB=5V, IC=0A VCE=5V, IC=100mA VCE=10V, IC=100mA VCB=10V, f=1MHz IC=1A, IB=100mA IC=1A, IB=100mA IC=10μA, IE=0A IC=100μA, RBE=0Ω IC=1mA, RBE=∞ IE=10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 150 150 120 7 50 1250 60 200 130 13 100 0.85 150 1.2 Ratings min typ max 1 1 560 MHz pF mV V V V V V ns ns ns Unit μA μA Package Dimensions unit : mm (typ) 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm (typ) 7003-003 6.5 5.0 2.3 4 4 1.5 0.5 0.5 5.5 7.0 5.5 7.0 0.8 1.6 1.2 7.5 1 0.6 2 0.8 0.85 0.7 0.85 0.5 3 0 to 0.2 1.2 2.5 1.2 0.6 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT VR IB1 OUTPUT IB2 RB RL 50Ω + 100μF VBE= --5V + 470μF VCC=60V IC=10IB1= --10IB2=0.5A No. A1168-2/4 SFT1201 2.5 IC -- VCE mA 200 160 mA 120mA 100mA 80mA 60mA 2.5 IC -- VCE 120mA 100mA 80mA 250 mA Collector Current, IC -- A Collector Current, IC -- A 2.0 2.0 60mA mA 40mA 1.5 500 1.5 40mA 20mA 1 A 60m mA 20mA 200 1.0 1.0 10mA 0.5 10mA 5mA 2mA 5mA 0.5 1mA IB=0mA 0 1 2 3 4 5 IT13534 0 0 0.1 0.2 0.3 IB=0mA 0.4 0.5 IT13533 0 Collector-to-Emitter Voltage, VCE -- V 3.0 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 1000 hFE -- IC VCE=5V 2.5 7 5 VCE=5V Ta=75°C 25°C Collector Current, IC -- A DC Current Gain, hFE 3 2 2.0 --25°C 1.5 100 7 5 3 2 10 0.01 1.0 5°C 25°C 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT13535 Ta= 7 --25°C 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Base-to-Emitter Voltage, VBE -- V 3 Collector Current, IC -- A 7 IT13536 fT -- IC Cob -- VCB f=1MHz VCE=10V Gain-Bandwidth Product, fT -- MHz 5 Output Capacitance, Cob -- pF 2 3 5 7 2 3 5 7 2 3 2 100 7 5 10 7 5 3 2 0.01 0.1 Collector Current, IC -- A 7 3 2 1.0 IT13537 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 3 5 7 100 IT13538 VBE(sat) -- IC IC / IB=10 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 0.1 7 5 1.0 Ta= --25°C 7 5 °C 25 3 2 75°C 25°C °C Ta=75 --25°C 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 3 0.01 0.01 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A IT13539 Collector Current, IC -- A IT13540 No. A1168-3/4 SFT1201 7 5 3 2 ASO ICP=4A IC=2.5A 10 0m