SFT1345

Ordering number : EN8987 SFT1345 SANYO Semiconductors DATA SHEET SFT1345 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications • • ON-resistance RDS(on)1=210mΩ(typ.) 4V drive Input Capacitance Ciss=1020pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --11 --44 1.0 35 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7518-004 6.5 5.0 1.5 4 2.3 0.5 Package Dimensions unit : mm (typ) 7003-004 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 t o 0.2 1.2 0.6 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2.5 0 .85 0.7 5.5 7.0 0 .85 0.5 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251, SOT-553 • Minimum Packing Quantity : 500 pcs./bag Product & Package Information Electrical Connection • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252, SOT-428 • Minimum Packing Quantity : 700 pcs./reel 2,4 Marking(TP, TP-FA) T1345 LOT No. Packing Type(TP-FA) : TL 1 TL 3 http://semicon.sanyo.com/en/network 72011PA TKIM TC-00002610 No.8987-1/4 SFT1345 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1mA, VGS=0V VDS=--100V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--5.5A ID=--5.5A, VGS=--10V ID=--3A, VGS=--4.5V ID=--3A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--50V, VGS=--10V, ID=--11A VDS=--50V, VGS=--10V, ID=--11A VDS=--50V, VGS=--10V, ID=--11A IS=--11A, VGS=0V Ratings min --100 --1 ±10 --1.2 8.5 210 225 235 1020 72 43 9.5 25 105 55 21 3.6 4.5 --0.93 --1.5 275 315 330 --2.6 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 0V --10V VIN VDD= --50V VIN PW=10μs D.C.≤1% G D ID= --5.5A RL=9.1Ω VOUT P.G SFT1345 50Ω S --11 --10 ID -- VDS --8 6. 0V -1 0. Drain Current, ID -- A --6 --1 --6 Drain Current, ID -- A --8 4 V -.0 --10 --8 --6 --4 --2 0 0 °C 25 0 --0.5 --1.0 --1.5 --2.0 --2.5 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --25 --3.0 °C --2 Tc= 7 --4 5°C VGS= --3.0V --3.5 --4.0 25° --4.5 IT116542 .5 V V --3.5 Tc= -Gate-to-Source Voltage, VGS -- V 0V --12 Drain-to-Source Voltage, VDS -- V IT16541 No.8987-2/4 C 75 --4 .0V 25°C Tc=25°C Single pulse --16 --14 ID -- VGS VDS= --10V Single pulse V °C .0 SFT1345 500 RDS(on) -- VGS ID= --3A --5.5A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 450 400 350 300 250 200 150 100 50 0 0 --2 --4 --6 --8 --10 Tc=25°C Single pulse 500 450 400 350 300 250 200 150 100 50 RDS(on) -- Tc Single pulse V -4 =GS -3. =, ID .0 V 0A -10 =GS V .0 -5. =, ID V 5A -4 =GS V 0 -3. =, ID .5V A --12 --14 --16 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.01 2 3 5 7--0.1 23 5 7--1.0 2 3 5 7--10 23 | yfs | -- ID IT16543 --100 7 5 3 2 Case Temperature, Tc -- °C IT16544 IS -- VSD Forward Transfer Admittance, | yfs | -- S VDS= --10V Single pulse Source Current, IS -- A VGS=0V Single pulse °C 25 °C -25 =Tc °C 75 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Drain Current, ID -- A 1000 7 5 57 --100 IT16545 --0.01 7 5 3 2 --0.001 --0.2 --0.3 --0.4 Tc= 7 --0.5 --0.6 --0.7 --25 °C --0.8 5°C 25° C --0.9 --1.0 --1.1 --1.2 SW Time -- ID VDD= --50V VGS= --10V 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT16546 Switching Time, SW Time -- ns 3 Ciss, Coss, Crss -- pF 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 td (off) tf tr Ciss td(on) Coss Crss 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 IT16548 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT16547 10 Drain Current, ID -- A --10 --9 VGS -- Qg Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 ASO Gate-to-Source Voltage, VGS -- V VDS= --50V ID= --11A Drain Current, ID -- A IDP= --44A (PW≤10μs) ID= --11A 10 0m --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 25 IT116549 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 1m 10 s ms s DC 10 10 0μ s μs op era tio n Operation in this area is limited by RDS(on). --0.01 --0.1 Tc=25°C Single pulse 23 5 7--1.0 2 3 5 7 --10 23 57 --100 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 57 --1000 IT16550 No.8987-3/4 SFT1345 1.2 PD -- Ta Allowable Power Dissipation, PD -- W 40 35 30 25 20 15 10 5 0 PD -- Tc Allowable Power Dissipation, PD -- W 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16551 Case Temperature, Tc -- °C IT16552 Note on usage : Since the SFT1345 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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