SFT1350

Ordering number : ENA1874 SFT1350 SANYO Semiconductors DATA SHEET SFT1350 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications • • ON-resistance RDS(on)1=45mΩ(typ.) 4.5V drive Input Capacitance Ciss=590pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --40 ±20 --19 --76 1.0 23 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7518-004 6.5 5.0 1.5 4 2.3 0.5 Package Dimensions unit : mm (typ) 7003-004 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 t o 0.2 1.2 0.6 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2.5 0 .85 0.7 5.5 7.0 0 .85 0.5 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK • Minimum Packing Quantity : 500 pcs./bag Product & Package Information Electrical Connection • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK • Minimum Packing Quantity : 700 pcs./reel 2, 4 Marking(TP, TP-FA) T1350 LOT No. Packing Type(TP-FA) : TL 1 TL 3 http://semicon.sanyo.com/en/network D1510PA TKIM TC-00002500 No. A1874-1/4 SFT1350 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1mA, VGS=0V VDS=--40V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--9.5A ID=--9.5A, VGS=--10V ID=--5A, VGS=--4.5V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--20V, VGS=--10V, ID=--19A VDS=--20V, VGS=--10V, ID=--19A VDS=--20V, VGS=--10V, ID=--19A IS=--19A, VGS=0V Ratings min --40 --1 ±10 --1.7 8.7 45 73 590 85 61 8 40 52 44 12 3.6 2.0 --1.03 --1.2 59 105 --2.6 typ max Unit V μA μA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 0V --10V VIN VDD= --20V VIN PW=10μs D.C.≤1% G D ID= --9.5A RL=2.1Ω VOUT P.G SFT1350 50Ω S --20 ID -- VDS .0V --6 .0 V .0V --10 --8 --18 --16 --25 Drain Current, ID -- A .0V --20 --12 --10 --8 --6 --4 --2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --4.0V --15 --10 --5 0 0 --1 --2 Tc= 75° --25 C °C VGS= --3.5V 25 °C --3 --4 --5 25° C --6 --1 6 --14 Drain Current, ID -- A Tc= --4.5V --25 °C 75° C Tc=25°C --30 ID -- VGS VDS= --10V --7 IT16108 Drain-to-Source Voltage, VDS -- V IT16056 Gate-to-Source Voltage, VGS -- V No. A1874-2/4 SFT1350 300 RDS(on) -- VGS Tc=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 160 140 120 100 80 60 40 20 0 --60 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 ID= --5A 200 --9.5A 150 = VGS = -, ID .5V --4 5.0A 100 0.0 = --1 VGS = --9 V, I D .5A 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 | yfs | -- ID IT16071 --100 7 5 3 2 Case Temperature, Tc -- °C IS -- VSD IT16068 Forward Transfer Admittance, | yfs | -- S VDS= --10V VGS=0V 25°C Tc= °C --25 C 75° Source Current, IS -- A --10 7 5 3 2 --1.0 7 5 3 2 Tc= 75°C Drain Current, ID -- A 1000 7 5 5 7 --100 IT16109 --0.01 7 5 3 2 --0.001 0 --0.2 --0.4 --0.6 --25°C --0.8 --0.1 7 5 3 2 25°C --1.0 --1.2 IT16072 SW Time -- ID VDD= --20V VGS= --10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT16073 td (off) tf tr 100 7 5 3 2 10 Coss Crss td(on) 0 --5 --10 --15 --20 --25 --30 --35 --40 Drain Current, ID -- A --10 VGS -- Qg Drain-to-Source Voltage, VDS -- V --1000 7 5 3 2 ASO IT16074 Gate-to-Source Voltage, VGS -- V VDS= --20V ID= --19A --8 Drain Current, ID -- A --6 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 IDP= --76A (PW≤10μs) ID= --19A DC op era 10 tio ms 1m 10 s 10μ s 0μ s --4 --2 n Operation in this area is limited by RDS(on). 10 0m s 0 0 2 4 6 8 10 12 IT116064 --0.1 --0.1 Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 --100 IT16065 No. A1874-3/4 SFT1350 1.2 PD -- Ta Allowable Power Dissipation, PD -- W 30 PD -- Tc Allowable Power Dissipation, PD -- W 1.0 25 23 20 0.8 0.6 15 0.4 10 0.2 5 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16066 Case Temperature, Tc -- °C IT16067 Note on usage : Since the SFT1350 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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