SFT1407

Ordering number : ENA0764 SFT1407 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SFT1407 Features • • • General-Purpose Switching Device Applications Motor drive application. Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10µs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 45 ±20 14 56 1.0 20 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=45V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=7A ID=7A, VGS=10V ID=7A, VGS=4V Ratings min 45 1 ±10 1.2 5.8 9.7 21 29 28 41 2.6 typ max Unit V µA µA V S mΩ mΩ Marking : T1407 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40407PA TI IM TC-00000275 No. A0764-1/4 SFT1407 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=24V, VGS=10V, ID=14A VDS=24V, VGS=10V, ID=14A VDS=24V, VGS=10V, ID=14A IS=14A, VGS=0V Ratings min typ 2225 260 190 27 50 150 80 40 6 8 0.92 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7518-004 6.5 5.0 2.3 Package Dimensions unit : mm(typ) 7003-004 6.5 5.0 2.3 1.5 4 1.5 0.5 0.5 4 7.0 5.5 0.8 1.6 7.5 1 0.5 2 0.8 1.2 3 0 to 0.2 1.2 0.6 0.6 2.5 0.85 0.7 5.5 7.0 0.85 0.5 1.2 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit VIN 10V 0V VIN ID=7A RL=3.3Ω VOUT VDD=24V D PW=10µs D.C.≤1% G P.G 50Ω S SFT1407 No. A0764-2/4 SFT1407 14 ID -- VDS 6.0V 4.0 V V 14 ID -- VGS VDS=10V 12 3.5 8.0 V 12 Drain Current, ID -- A 10. 0V 10 Drain Current, ID -- A 3.3V 10 8 1 6 .0 V 8 6 6 VGS=3.0V 4 4 0 0 0.2 0.4 0.6 0.8 1.0 IT12253 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 60 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 60 25° C IT12254 100 120 140 2 2 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID=7A 50 50 40 40 30 30 =7A , ID =4V 7A VGS , I D= =10V VGS 20 20 10 10 0 0 2 4 6 8 10 12 14 16 0 --60 --40 --20 0 20 40 60 Ta =7 5°C 80 --25° C 160 Gate-to-Source Voltage, VGS -- V 3 IT12255 5 3 2 Ambient Temperature, Ta -- °C IT12256 yfs -- ID IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS=10V 5°C 2 10 7 5 3 2 = Ta 5 --2 °C °C 75 Source Current, IS -- A 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.2 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.4 Ta=7 5 0.6 --25° C 0.8 °C 25°C 1.0 1.2 IT12258 Drain Current, ID -- A 3 2 IT12257 5 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=24V VGS=10V Ciss, Coss, Crss -- pF 3 Switching Time, SW Time -- ns Ciss 2 100 7 5 tf 1000 7 5 3 2 3 2 td(on) tr Coss Crss 10 7 0.1 100 2 3 5 7 1.0 2 3 5 7 10 2 3 0 5 10 15 20 25 30 35 40 45 Drain Current, ID -- A IT12259 Drain-to-Source Voltage, VDS -- V IT12260 No. A0764-3/4 SFT1407 10 9 VGS -- Qg VDS=24V ID=14A Drain Current, ID -- A 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=56A