SFT1440

Ordering number : ENA1816 SFT1440 SANYO Semiconductors DATA SHEET SFT1440 Features • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)=6.2Ω(typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 600 ±30 1.5 6.0 1.0 20 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7518-004 6.5 5.0 1.5 4 2.3 0.5 Package Dimensions unit : mm (typ) 7003-004 6.5 5.0 4 2.3 1.5 0.5 7.0 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 t o 0.2 1.2 0.6 2.5 0 .85 0.7 0 .85 0.5 1.2 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251, SOT553 • Minimum Packing Quantity : 500 pcs./bag Product & Package Information Electrical Connection 2,4 • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252, SOT428 • Minimum Packing Quantity : 700 pcs./reel Marking(TP, TP-FA) T1440 LOT No. Packing Type(TP-FA) : TL 1 TL 3 http://semicon.sanyo.com/en/network 81110PE TK IM TC-00002437 No. A1816-1/4 SFT1440 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±24V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=0.8A ID=0.8A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=300V, VGS=10V, ID=1.5A VDS=300V, VGS=10V, ID=1.5A VDS=300V, VGS=10V, ID=1.5A IS=1.5A, VGS=0V Ratings min 600 100 ±10 3.0 1.0 6.2 130 25 4.0 9.1 15 18 19 6.3 1.4 3.6 0.85 1.2 8.1 5.0 typ max Unit V μA μA V S Ω pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 10V 0V VIN VDD=200V VIN PW=10μs D.C.≤1% G D ID=0.8A RL=250Ω VOUT P.G SFT1440 50Ω S 2.0 1.8 1.6 ID -- VDS 10 V 2.0 ID -- VGS Tc= --2 5°C VDS=10V 15 V 8V 1.8 25°C 7V 1.6 Drain Current, ID -- A Drain Current, ID -- A 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 75°C 6V VGS=5V 0 2 4 6 8 10 12 14 16 18 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IT15876 Drain-to-Source Voltage, VDS -- V IT15875 Gate-to-Source Voltage, VGS -- V No. A1816-2/4 SFT1440 20 18 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 18 16 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 16 14 12 10 8 6 4 2 2 4 6 ID=0.8A 14 12 10 8 6 4 2 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 8 10 12 14 16 18 20 22 24 26 28 30 Gate-to-Source Voltage, VGS -- V 3 | yfs | -- ID IT15877 3 2 1.0 7 5 Case Temperature, Tc -- °C IT15878 IS -- VSD Forward Transfer Admittance, | yfs | -- S 2 1.0 VDS=10V VGS=0V Source Current, IS -- A 7 5 3 2 0.1 7 5 3 2 0.01 0.001 °C 25 3 2 0.1 7 5 0.01 7 5 3 2 2 3 5 7 0.01 2 3 5 7 0.1 2 3 Drain Current, ID -- A 100 7 5 7 1.0 2 IT15879 0.001 0.2 0.4 Tc= 7 3 2 0.6 --25° C 0.8 25°C C 5° --2 = Tc °C 75 5°C 1.0 1.2 IT15880 SW Time -- ID VDD=200V VGS=10V Ciss, Coss, Crss -- pF 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 5 Ciss 100 7 5 3 2 10 7 5 3 2 tf 3 2 td (off) Coss tr 10 7 5 0.1 2 3 5 7 2 3 td(on) Crss 1.0 1.0 0 5 10 15 20 25 30 35 40 45 50 Drain Current, ID -- A 16 14 12 10 8 6 4 2 0 IT15893 10 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO IT15894 Gate-to-Source Voltage, VGS -- V VDS=300V ID=1.5A Drain Current, ID -- A IDP=6.0A (PW≤10μs) 10 ID=1.5A DC op 1.0 7 5 3 2 0.1 7 5 3 2 10 era tio 10 1m s m s 0μ s 10 μs 0m s Operation in this area is limited by RDS(on). n( Ta =2 5° C ) 0 1 2 3 4 5 6 7 8 IT15895 0.01 1.0 Tc=25°C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 1000 IT15884 No. A1816-3/4 SFT1440 1.2 PD -- Ta Allowable Power Dissipation, PD -- W 25 PD -- Tc Allowable Power Dissipation, PD -- W 1.0 20 0.8 No 0.6 15 he at sin k 10 0.4 0.2 5 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT15885 Case Temperature, Tc -- °C IT15886 Note on usage : Since the SFT1440 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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