SFT1443

Ordering number : ENA1896 SFT1443 SANYO Semiconductors DATA SHEET SFT1443 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications • • ON-resistance RDS(on)1=180mΩ(typ.) 4V drive Input Capacitance Ciss=490pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 100 ±20 9 36 1 19 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7518-004 6.5 5.0 1.5 4 2.3 0.5 Package Dimensions unit : mm (typ) 7003-004 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 t o 0.2 1.2 0.6 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2.5 0 .85 0.7 5.5 7.0 0 .85 0.5 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK • Minimum Packing Quantity : 500 pcs./bag Product & Package Information Electrical Connection • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK • Minimum Packing Quantity : 700 pcs./reel 2,4 Marking(TP, TP-FA) T1443 LOT No. Packing Type(TP-FA) : TL 1 TL 3 http://semicon.sanyo.com/en/network D1510PA TKIM TC-00002450 No. A1896-1/4 SFT1443 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4.5A ID=3A, VGS=10V ID=1.5A, VGS=4.5V ID=1.5A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=50V, VGS=10V, ID=9A VDS=50V, VGS=10V, ID=9A VDS=50V, VGS=10V, ID=9A IS=9A, VGS=0V Ratings min 100 1 ±10 1.5 4 180 195 205 490 34 19 8 10 34 24 9.8 1.8 1.6 1.03 1.2 225 275 290 2.6 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 10V 0V VIN VDD=50V VIN PW=10μs D.C.≤1% G D ID=4.5A RL=11.1Ω VOUT P.G SFT1443 50Ω S 9 8 7 ID -- VDS Tc=-25°C 1 0 0. V 8.0 V 10 ID -- VGS VDS=10V V 4.5 V 6.0 4.0V 9 8 Drain Current, ID -- A V Drain Current, ID -- A 6 5 4 3 2 16 7 6 5 4 .0 3.5V 3.0V 1 0 2 1 Tc= 75° C 0 0.5 1.0 1.5 2.0 2.5 VGS=2.5V 0 0.5 1.0 1.5 2.0 2.5 3.0 IT16177 0 3.0 25° 3.5 C --25°C 4.0 3 4.5 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V IT16178 No. A1896-2/4 SFT1443 450 RDS(on) -- VGS Tc=25°C ID=1.5A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 450 400 350 300 250 200 150 100 50 0 --60 --40 --20 0 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 350 3.0A 300 250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 =4 V GS = V GS =1 , ID 0V . .5A VG =4 S =1 ID V, .5 .5A =3. , ID .0V 10 0A 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 | yfs | -- ID IT16179 10 7 5 3 2 Case Temperature, Tc -- °C IT16180 IS -- VSD Forward Transfer Admittance, | yfs | -- S VDS=10V VGS=0V 25°C 0.01 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 IT16182 Drain Current, ID -- A 100 7 10 IT16181 1000 7 5 7 0.001 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=50V VGS=10V Ciss, Coss, Crss -- pF Tc=7 5°C 25°C --25° C 5°C Tc= --2 75°C Source Current, IS -- A 1.0 7 5 3 2 0.1 7 5 3 2 f=1MHz 3 2 tf 10 7 5 3 2 1.0 0.1 td(on) tr 100 7 5 3 2 10 Coss Crss 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 10 9 5 7 100 IT16183 0 5 10 15 20 25 30 IT16184 VGS -- Qg Drain-to-Source Voltage, VDS -- V 100 7 5 3 2 ASO Gate-to-Source Voltage, VGS -- V VDS=50V ID=9A Drain Current, ID -- A IDP=36A (PW≤10μs) ID=9A DC 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 10μ 10 ope s 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ms ion 10 1m s 0μ s rat Operation in this area is limited by RDS(on). 10 0m s 0.01 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC IT16185 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16186 No. A1896-3/4 SFT1443 1.2 PD -- Ta Allowable Power Dissipation, PD -- W 25 PD -- Tc Allowable Power Dissipation, PD -- W 1.0 20 19 0.8 15 0.6 10 0.4 0.2 5 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16187 Case Temperature, Tc -- °C IT16188 Note on usage : Since the SFT1443 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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