SMP3003

Ordering number : ENA1655 SMP3003 SANYO Semiconductors DATA SHEET SMP3003 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --75 ±20 --100 --400 90 150 --55 to +150 468 --60 Unit V V A A W °C °C mJ A Note : *1 VDD=--48V, L=100μH, IAV=--60A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=--1mA, VGS=0V VDS=--75V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA --1.2 Ratings min --75 --10 ±10 --2.6 typ max Unit V μA μA V Marking : MP3003 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 21710QA TK IM TC-00002253 No. A1655-1/3 SMP3003 Continued from preceding page. Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, ID=--50A ID=--50A, VGS=--10V ID=--50A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--48V, VGS=--10V, ID=--100A VDS=--48V, VGS=--10V, ID=--100A VDS=--48V, VGS=--10V, ID=--100A IS=--100A, VGS=0V Ratings min typ 140 6.2 8.0 13400 1000 740 95 1000 800 820 280 50 55 --1.0 --1.5 8.0 11 max Unit S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7001-003 10.2 0.2 4.5 1.3 1.5M AX 9.9 8.8 3.0 1 0.8 2 3 1.2 0 t o 0.3 0.4 2.7 2.55 2.55 1.35 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.55 2.55 Switching Time Test Circuit VIN VDD= --48V 1.4 Avalanche Resistance Test Circuit L ≥50Ω RG 0V --10V VIN PW=10μs D.C.≤1% G D ID= --50A RL=0.96Ω VOUT 0V --10V SMP3003 50Ω VDD P.G SMP3003 50Ω S No. A1655-2/3 SMP3003 3 2 SW Time -- ID td (off) VDD= --48V VGS= --10V Switching Time, SW Time -- ns --1000 7 5 3 2 ASO IDP= --400A ID= --100A PW≤10μs 10 1m 10 s m DC 100m s op s era tio n 7 5 3 2 tf Drain Current, ID -- A 1000 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 0μ s 10 μs tr Operation in this area is limited by RDS(on). 100 7 5 --0.1 2 3 5 7 --1.0 td(on) 2 3 5 7 --10 2 3 5 7 --100 IT15359 Tc=25°C 2 3 5 7 --10 2 3 --0.1 Single pulse 5 7 --1.0 --0.1 2 3 Drain Current, ID -- A 100 PD -- Tc Drain-to-Source Voltage, VDS -- V 120 EAS -- Ta 5 7--100 2 IT15360 Allowable Power Dissipation, PD -- W Avalanche Energy derating factor -- % 0 20 40 60 80 100 120 140 160 90 80 70 60 50 40 30 20 10 0 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT14184 Case Temperature, Tc -- °C IT15361 Ambient Temperature, Ta -- °C Note on usage : Since the SMP3003 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice. PS No. A1655-3/3