TN5D01A_11

Ordering number : ENA1446 TN5D01A SANYO Semiconductors DATA SHEET TN5D01A Features • • • • • • ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (Variable Output Type) High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET). Over current protection function (Self recovery type). Under voltage protection function. Over temperature protection function (Self recovery type). Soft start function (Variable subject to externally-connected capacitor). Stand-by mode function (Compatible with soft start terminal). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Maximum Input Voltage Maximum Output Current Drain-to-Source Voltage of built-in MOSFET Drain Current of built-in MOSFET (DC) Drain Current of built-in MOSFET (Pulse) FB Pin Maximum Input Voltage SS Pin Maximum Input Voltage Allowable Power Dissipation Operating Temperature Junction Temperature Storage Temperature Symbol VIN max IO max VDSS ID IDP Vfb VSS PD Topr Tj Tstg Tc=25°C PW≤10μs, duty cycle≤1% Conditions Ratings 57 5 --60 -9 --36 5 7 2.0 15 --25 to +125 150 --55 to +150 Unit V A V A A V V W W °C °C °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 71509IQ TK IM TC-00002025 No. A1446-1/11 TN5D01A Recommended Operating Conditions Parameter Input Voltage Output Voltage Output Current Operating Temperature Range Symbol VIN VOUT IOUT Topr rec Ta=25°C Ta=25°C, VOUT / VIN ≥ 0.1 Ta=25°C Conditions Ratings 10 to 30 2.7 to 4.9 0 to 5 --10 to + 85 Unit V V A °C Electrical Characteristics at Ta=25°C, See Specified Test Circuit (VOUT=3.3V) Parameter Reference Voltage Efficiency Drain-to-Source Breakdown Voltage of built-in MOSFET Drain-to-Source On Resistance of built-in MOSFET Switching Frequency Maximum Duty Line Regulation Load Regulation Output Voltage Temperature Coefficient *1 Over-Current-Protection-Operation -Threshold Current Under-Voltage-Protection-Operation -Threshold Voltage Under-Voltage-Protection-Operation -Release Voltage Under-Voltage-Protection Hysteresis Voltage Over-Temperature-Protection-Operation -Threshold-Temperature *1 Over-Temperature-Protection-Operation -Release Temperature *1 Over-Temperature-Protection-Operation -Hysteresis Temperature *1 SS Terminal Current Standby Operating Voltage Standby Current Symbol VFB η V(BR)DSS RDS(on) Freq Duty max ΔVline ΔVload ΔVO/ΔTa Iocp Vuvlo on Vuvlo off Vuvlo hys Ttsd on Ttsd off Ttsd hys ISS Vstb on Istb VIN=20V VIN=20V VIN=20V, VSS=0V Conditions VIN=20V, IOUT=3A VIN=20V, IOUT=3A ID=--1mA, VIN, GND, Vfb, VSS=0V ISW=5A VIN=20V, IOUT=3A VIN=20V, Vfb=0V VIN=10 to 30V, IOUT=3A VIN=20V, IOUT=0.5 to 5A VIN=20V, IOUT=3A, Ta=--25 to 125°C VIN=20V 5.1 7.2 8.1 120 88 Ratings min 1.12 typ 1.15 82 --60 100 150 92 30 35 ±0.33 7.5 8.0 9.0 1.0 165 140 25 10 0.3 500 10 8.8 9.9 180 96 60 60 max 1.18 Unit V % V mΩ kHz % mV mV mV / °C A V V V °C °C °C μA V μA Note: the values with “*1” are our targeted values, but not guaranteed. No. A1446-2/11 TN5D01A Package Dimensions unit : mm (typ) 7531-001 10.0 3.2 3.5 4.5 2.8 16.0 7.2 17.5 (1.6) 2.4 8.9 0.9 0.5 12 1.27 2.54 3.81 3 45 0.7 2.75 21.4 1 : VIN 2 : GND 3 : SWOUT 4 : FB 5 : SS SANYO : TO-220FI5H-HCC 1.27 2.54 Block Diagram VIN 1 Under Voltage Protect Over Temperature Protect Over Current Protect SENSE Pch MOSFET OUTPUT 3 SWOUT OSC SS 5 SOFTSTART Band Gap + -GND 2 AMP -COMP + 4 FB No. A1446-3/11 TN5D01A Pin Functions Pin No. 1 2 3 4 5 Symbol VIN GND SWOUT FB SS GND Pulse Voltage Output Feedback from Output Voltage For Soft Start Capacitor Connection and Standby Mode Switching Function Power Supply Input (Maximum 57V) Application Circuit Example 1 VIN VIN 5 SS + 2 GND SWOUT 3 VOUT FB 4 + GND GND 7 5 3 2 Forward Bias A S O Allowable Power Dissipation, PD -- W IDP= --36A