TN6Q04

Ordering number : ENN8294 TN6Q04 ExPD (Excellent Power Device) TN6Q04 Features • • • • • Quasi-Resonant Switching Power Supply ExPD Quasi-resonant type original control IC. High voltage power MOSFET with current sense. Low input voltage protection (self reset) Overvoltage protection (latch). Overcurrent protection (pulse-by-pulse). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDD Pin Applied Voltage FB Pin Applied Voltage EDGE Pin Applied Voltage Allowable Power Dissipation Operating Temperature Junction Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS ID IDP VDD VFB VEDGE PD Topr Tj Tstg EAS IAV 3-5 3-5 3-5 3-5 3-5 4-5 1-5 2-5 Tc=25°C PW≤10µs, duty cycle≤1% Conditions Ratings 650 5.5 16.5 --0.3 to 16.7 --0.3 to VDD+0.3 --0.3 to VDD+0.3 2 35 --25 to +125 150 --55 to +150 155 5.5 unit V A A V V V W W °C °C °C mJ A [All voltage parameters are absolute voltage referenced to GND] *1 VDD=50V, L=10mH, IAV=5.5A *2 L≤10mH, single pulse Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32505IQ TS IM TB-00001322 No.8294-1/4 TN6Q04 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance [IC] Power Supply Line Breakdown Voltage Overvoltage Input Latch Shutdown Threshold Voltage Burst Mode Start Threshold Voltage Burst Mode Stop Threshold Voltage Burst Mode Hysteresis Voltage Low Voltage Protection ReleaseThreshold Voltage (Latch Reset Threshold Voltage) Low Voltage Protection Operation Threshold Voltage Low Voltage Protection Hysteresis Voltage Feedback Detection Threshold Voltage Edge Signal Release Threshold Voltage Edge Signal Detection Threshold Voltage Edge Signal Hysteresis Voltage Reference Oscillation Frequency Maximum Oscillation Frequency Power Supply Current (at start-up) Minimum ON Time Step Drive Voltage Step Drive Gate Voltage V(BR)DD OVP VBon VBoff ∆VB UVH UVL ∆UV VFB VEDGE-H VEDGE-L ∆VEDGE fosc fmax IDD(on) ton(min) tstep VGstep 4-5 IDD=1mA, VFB=0 4-5 4-5 VEDGE=VDD 4-5 VEDGE=VDD 4-5 VEDGE=VDD 4-5 4-5 4-5 1-5 2-5 2-5 2-5 3-5 VEDGE=0 3-5 4-5 3-5 3-5 3-5 30 150 0.58 2.3 1.6 16.7 15.7 15.2 14.6 16.5 16.0 15.4 0.6 9.1 8.0 9.9 8.8 1.1 0.70 2.6 1.9 0.7 35 180 200 300 200 VDD--5.7 40 210 0.82 2.9 2.2 10.7 9.6 17.3 16.8 16.2 V V V V V V V V V V V V kHz kHz µA ns ns V V(BR)DSS IDSS RDS(on) Ciss Coss 3-5 ID=1mA, VDD=0 3-5 VDS=650V, VDD=0 3-5 ID=2.8A, VDD=15V VDS=20V, f=1MHz VDS=20V, f=1MHz 650 1 1.2 1450 250 1.6 V mA Ω pF pF Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2249 10.0 4.5 3.2 2.8 3.5 16.0 7.2 2.4 (5.3) (4.0) 0.7 (0.9) 1.5 3.0 6.5 0.9 2.54 1.27 12 3 45 2.54 1.27 13.3 0.5 10.3 1.27 2.54 1.27 2.54 6.0 1 : FB 2 : EDGE 3 : DRAIN 4 : VDD 5 : SOURCE SANYO : TO-220FI5H No.8294-2/4 TN6Q04 Block Diagram VDD pin EDGE pin 4 Internal power supply Undervoltage protection 2 Falling edge detection Overvoltage protection Reference voltage Oscillator Latch circuit Burst circuit 3 DRAIN pin Overcurrent / FB comparator Logic Driver FB pin 1 5 SOURCE (GND) pin Pin Definitions and Functions Pin No. 1 2 3 4 5 Symbol FB EDGE DRAIN VDD SOURCE (GND) Name Overcurrent / feedback terminal EDGE dtection terminal DRAIN terminal Power supply terminal Source (Ground) terminal Delay EDGE voltage input Power MOSFET drain Input for start-up voltage and drive voltage Power MOSFET source (ground) Function Overcurrent detection / voltage control input Sample Application Circuit Starting resistors Voltage resonance capacitor Snubber circuit +B + 5 + 4 OCP Input voltage compensation resistor 3 2 GND 1 + Error amplifier FB / OCP adjusting resistor VCC circuit Delay time setting capacitor and resistor No.8294-3/4 TN6Q04 3 2 10 7 5 Forward Bias ASO IDP=16.5A ID=5.5A 1m 10 10 m 1 DC 00m s op s era tio n s 0µ s Allowable Power Dissipation, PD -- W