TN8R04

Ordering number : ENN7688 TN8R04 ExPD (Excellent Power Device) TN8R04 Features • • • • • Switching Regulator IC for RCC Method Power Supplies Applications Original control IC for Delay RCC-type. High voltage power MOSFET with current sense. Overload protection. Only few external components required. Small Full-Isolation package : TO-220FI5H. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Drain Current (DC) Drain Current (Pulse) IC Input Voltage Allowable Power Dissipation Operating Temperature Junction Temperature Storage Temperature Symbol VDS ID IDP VIN PD Topr Tj Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 800 3.5 10.5 30 2.0 Tc=25°C 30 --25 to +125 150 --55 to +150 Unit V A A V W W °C °C °C Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Cutoff Voltage Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance [IC] Restriction of Drive Voltage Detection Voltage of Feedback and Overload Amplifier VIN(OV) VFB IIN=1mA, VFB=0 VDELAY, VIN=10V, IIN=50mA 30 2.0 V V V(BR)DSS IDSS VGS(off) RDS(on) Ciss Coss ID=1mA, VDELAY=0 VDS=800V, VDELAY=0 VDS=10V, ID=1mA ID=1.8A, VDELAY=15V VDS=20V, f=1MHz VDS=20V, f=1MHz 800 1.0 3.0 2.3 1100 170 4.0 2.9 V mA V Ω pF pF Symbol Conditions Ratings min typ max Unit Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13004 TS IM TA-100895 No.7688-1/4 TN8R04 Recommend Operating Conditions at Ta=25°C Parameter IC Input Voltage Operating Frequency Symbol VIN FOSC Conditions Ratings ±10 to ±25 20 to 200 Unit V kHz Package Dimensions unit : mm 2226 10.0 4.5 3.2 2.8 3.5 16.0 7.2 2.4 (5.3) (4.0) 0.7 (0.9) 1.5 3.0 6.5 0.9 2.54 1.27 3 12 45 2.54 1.27 13.3 0.5 10.3 1.27 2.54 1.27 2.54 Block Diagram VIN 4 Detection of Timing Signal 3 DRAIN Sense MOS DELAY 2 Restriction of Drive Voltage FB 1 Feedback and Overload Amplifier 6.0 1 : FB 2 : Delay 3 : Drain 4 : VIN 5 : Source SANYO : TO-220FI5H P.MOS 5 SOURCE (GND) Pin Definitions and Functions Pin No. 1 2 3 4 5 Symbol FB DELAY DRAIN VIN SOURCE (GND) Function Input for feedback voltage and current sense Input for timing signal Power MOSFET Drain Input for Start-up voltage and drive voltage Power MOSFET Source (Ground) No.7688-2/4 TN8R04 Circuit Function Diagram [Feedback control] Snubber Circuit VIN(AC) + 5 Start-up Resistor 4 3 Pin Definitions 1 : FB 2 : DELAY 3 : DRAIN 4 : VIN 5 : SOURCE (GND) 2 GND 1 Drive Circuit Error Detection Input Compensation Resistor Feedback Control Capacitor Resonant Capacitor Timing Capacitor + VOUT [Semi-regulated control] Snubber Circuit VIN(AC) + 5 Start-up Resistor 4 3 2 GND 1 Drive Circuit Resonant Capacitor Timing Capacitor + VOUT Feedback Control Capacitor Input Compensation Resistor + Pin Definitions 1 : FB 2 : DELAY 3 : DRAIN 4 : VIN 5 : SOURCE (GND) Error Detection No.7688-3/4 TN8R04 3 2 10 7 5 Forward Bias ASO Allowable Power Dissipation, PD -- W IDP=10.5A ID=3.5A