TND017MP_07

Ordering number : EN6481D TND017MP / SW SANYO Semiconductors DATA SHEET TND017MP TND017SW Features • • • • • ExPD(Excellent Power Device) Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications N-channel MOSFET built in. Overheat protection. Overcurrent protection (Self recovery type current limiting function). Overvoltage protection. TND017SW incorporates two sets of circuit. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Output Current Input Voltage Allowable Power Dissipation Operating Supply Voltage Operating Temperature Junction Temperature Storage Temperature Symbol VDS IO(DC) VIN TND017MP PD VDS(opr) Topr Tj Tstg TND017SW Mounted on a ceramic board (1200mm2✕0.8mm) 1unit TND017SW Mounted on a ceramic board (1200mm2✕0.8mm) Conditions Ratings 60 1.5 --0.3 to +10 1.0 1.7 2.0 40 --40 to +85 Internally Limited --55 to +150 Unit V A V W W W V °C °C °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O2407 TI IM TC-00000975 / 90507 TI IM TC-00000883 / 72606IP MS IM / 12501TS TA-3183 / 42000TS (KOTO) TA-2832 No.6481-1/6 TND017MP / SW Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Clamp Voltage Output-OFF Current Input Threshold Voltage Protection Circuit Operating Input Voltage Drain-to-Source ON Resistance Input Current (Output On) Overheat Detecting Temperature Overcurrent Detecting Current Overcurrent Limit (Peak) Input Clamp Voltage Symbol VDS, clamp IDSS1 IDSS2 VIN(th) VIN(opr) RDS(on) IIN Tj(sd) Is ILMT VIN, clamp Conditions VIN=0V, IO=1mA VIN=0V, VDS=50V VIN=0V, VDS=12V VDS=5V, IO=1mA VIN=5V, IO=1A VIN=5V VIN=5V, IO=1A VIN=5V VIN=5V Ratings min 60 10 5 1.0 4 0.3 0.25 120 3.0 3.5 10 150 4.0 4.5 1.5 2.0 10 0.4 0.6 190 5.0 5.5 typ max Unit V µA µA V V Ω mA °C A A V IIN=1mA Notes : 1. Overcurrent protection circuit limits the output current to the range of overcurrent limit value. or below. 2. During overheat protecting operation, output current is once turned off and then recovers after the input voltage falls to the reset voltage (1.0V) Package Dimensions unit : mm (typ) 7520-003 [TND017MP] 6.0 5.0 4.7 Package Dimensions unit : mm (typ) 7005-005 [TND017SW] 8 5 0.3 8.5 4.4 1.0 0.5 0.6 0.5 3.0 6.0 0.5 14.0 1 4 0.43 1.5 1.8 MAX 0.2 5.0 123 1 : GND 2 : OUT 3 : IN 1.45 1 : GND1 2 : IN1 3 : GND2 4 : IN2 5 : OUT2 6 : OUT2 7 : OUT1 8 : OUT1 SANYO : SOP8 0.595 1.27 1.45 SANYO : MP Block Diagram OUT(D) Overcurrent protective circuit IN Output current control ESD protective circuit Overheat protective circuit Overvoltage protective circuit Gate shutdown circuit Latch GND(S) 0.1 No.6481-2/6 TND017MP / SW 0.5 RDS(on) -- Ta IO=1A 0.6 RDS(on) -- VIN IO=1A 0.4 0.5 5V =4V VIN Drain-to-Source ON Resistance, RDS(on) -- Ω Drain-to-Source ON Resistance, RDS(on) -- Ω 0.4 Ta=85°C 25°C 0.3 6V 0.3 0.2 --40°C 0.2 0.1 0.1 0 --50 0 --25 0 25 50 75 100 IT02011 1.0 2 3 4 5 6 7 8 9 10 IT02012 Ambient Temperature, Ta -- °C 0.6 IIN -- Ta VIN=5V Input Voltage, VIN -- V IIN -- VIN Ta=25°C 0.9 0.8 0.5 Input Current, IIN -- mA Input Current, IIN -- mA 0.4 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.3 Protection op eration 0.2 Normal oper ation 0.1 0 --50 0 --25 0 25 50 75 100 IT02013 5 0 1 2 3 4 5 6 7 8 9 10 Ambient Temperature, Ta -- °C 6.0 IS -- Ta Overcurrent Detecting Current, IS -- A Input Voltage, VIN -- V IT02014 IS -- VIN Ta=25°C Overcurrent Detecting Current, IS -- A 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 --50 4 VIN=6V 3 5V 4V 2 1 --25 0 25 50 75 100 IT02015 0 4.0 4.5 5.0 5.5 6.0 IT02016 Ambient Temperature, Ta -- °C 7 ILMT -- Ta VIN=5V Input Voltage, VIN -- V 7 ILMT -- VIN Ta=25°C 6 6 Overcurrent Limit, ILMT -- A 5 Overcurrent Limit, ILMT -- A --25 0 25 50 75 100 IT02017 5 4 4 3 3 2 2 1 0 --50 1 0 4.0 4.5 5.0 5.5 6.0 IT02018 Ambient Temperature, Ta -- °C Input Voltage, VIN -- V No.6481-3/6 TND017MP / SW Drain-to-Source Clamp Voltage, VDS, Clamp -- V 70 69 68 67 66 65 64 63 62 61 60 --50 --25 0 25 50 75 100 IT02019 2.0 VDS, clamp -- Ta Input Clamp Voltage, VIN, Clamp -- V VIN=0V IO=1mA 12.5 VIN, clamp -- Ta IIN=1mA 12.0 11.5 11.0 10.5 10.0 --50 --25 0 25 50 75 100 IT02020 Ambient Temperature, Ta -- °C 2.5 Ambient Temperature, Ta -- °C VIN(th) -- Ta VDS=5V IO=1mA IO -- VIN VDS=24V Threshold Voltage, VIN(th) -- V 2.0 1.5 Output Current, IO -- A 1.5 1.0 1.0 0.5 0 --50 --25 0 25 50 75 100 IT02021 0 0.5 1.0 1.5 2.0 --40 °C 2.5 0.5 Ta= 8 5°C 25°C 3.0 3.5 IT02022 Ambient Temperature, Ta -- °C Overheat Detecting Temperature, Tj(sd) -- °C 200 Tj(sd) -- VIN Allowable Power Dissipation, PD -- W Input Voltage, VIN -- V 1.2 PD -- Ta TND017MP 180 1.0 160 0.8 140 0.6 120 0.4 100 0.2 80 4.0 4.5 5.0 5.5 6.0 IT02023 0 --40 --20 0 20 40 60 80 100 IT02024 Allowable Power Dissipation, PD(Circuit2) -- W 2.0 1.8 PD(Circuit2) -- PD(Circuit1) TND017SW Input Voltage, VIN -- V Ambient Temperature, Ta -- °C 2.5 PD -- Ta TND017SW M 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 ou nte Allowable Power Dissipation, PD -- W 2.0 do na ce ram 1.7 1.5 To tal Di ic ssi pa bo tio ard (1 1u 1.0 n 20 nit 0m m2 ✕0 .8m m) 0.5 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 --40 Mounted on a ceramic board (1200mm2✕0.8mm) --20 0 20 40 60 80 100 IT02026 Allowable Power Dissipation, PD(Circuit1) -- W IT02025 Ambient Temperature, Ta -- °C No.6481-4/6 TND017MP / SW Sample Application Circuit AC24V AC100V Lamp Lamp Lamp OUT TND017MP / SW GND IN 5V 5V Microcontroller Microcontroller OUT 1 IN 1 TND017SW OUT 2 IN 2 5V Microcontroller GND 1, 2 Another Sample Application Circuit (Solenoid drive) AC24V AC100V Solenoid OUT TND017MP / SW GND IN 5V 5V MicroMicrocontroller controller IN 1 OUT 1 Solenoid OUT 2 IN 2 5V Microcontroller TND017SW GND 1, 2 Operation Description • The output power MOSFET will be turned on when the input voltage exceeds the input threshold voltage (4 to 6V is recommended), and then the lamp will be turned on by the current flowing to the lamp. Conversely, the output power MOSFET will be turned off when the input voltage goes below the input threshold voltage, and the lamp will be turned off. • The inrush current that occurs during normal lamp operation is limited to a preset value by the built-in overcurrent protecting circuit, which makes the lamp life longer. • The internal overcurrent protection function limits the current of output power MOSFET when output current of at least the overcurrent detecting current value flows at load short. Besides, if the device temperature exceeds the allowable power dissipation, overheat protection function protects the power switch from being broken down by shutting down the MOSFET when Tj comes to 150°C (typical). • Shutdown state will be kept after overheat protection operation and the system will be reset when the input voltage goes to or below the reset voltage (1V). • As an example of application circuit, DC voltage can also be controlled as a solenoid drive. Addition • The diode between OUT and GND in the block diagram is parasitic diode of the MOSFET. • Not apply a voltage on IN terminal during the period when OUT voltage is lower then GND voltage when driving a solenoid or a motor. • Be sure connect a diode between OUT terminal and GND terminal when you want to apply a voltage on IN terminal under the above-stated state (that is, OUT Voltage < GND Voltage). No.6481-5/6 TND017MP / SW SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2007. Specifications and information herein are subject to change without notice. PS No.6481-6/6