TND027SW_11

TND027SW_11

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    TND027SW_11 - Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications - Sanyo Semicon ...

  • 详情介绍
  • 数据手册
  • 价格&库存
TND027SW_11 数据手册
Ordering number : EN7437C TND027SW SANYO Semiconductors DATA SHEET TND027SW Features • • • • • ExPD(Excellent Power Device) Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications N-channel MOSFET built in Overheat protection (Self recovery type) Overcurrent protection (Self recovery type current limiting function) Overvoltage protection Incorporates two sets of circuit Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Output Current Input Voltage Allowable Power Dissipation Operating Supply Voltage Operating Temperature Junction Temperature Storage Temperature Symbol VDS IO(DC) VIN PD VDS(opr) Topr Tj Tstg When mounted on ceramic substrate (1200mm2×0.8mm) Iunit When mounted on ceramic substrate (1200mm2×0.8mm) Conditions Ratings 60 1.5 --0.3 to +10 1.3 1.7 40 --40 to +85 150 --55 to +150 Unit V A V W W V °C °C °C Package Dimensions unit : mm (typ) 7005A-005 5.0 0.8 8 5 0.2 0.3 Product & Package Information • Package : SOP8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TL Marking 0.1 6.0 4.4 0.8 1 1.27 4 0.43 1.8 MAX 1.5 1 : GND1 2 : IN1 3 : GND2 4 : IN2 5 : OUT2 6 : OUT2 7 : OUT1 8 : OUT1 SANYO : SOP8 TL TND 027 LOT No. Block Diagram Overcurrent protective circuit IN Output current control Overheat protective circuit OUT(D) Overvoltage protective circuit 0.7 Gate shutdown circuit ESD protective circuit GND(S) http://semicon.sanyo.com/en/network O2611 TKIM/D2607IP TIIM TC-00001114/O2203 TSIM/51503 TSIM TA-100479 No.7437-1/5 TND027SW Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Clamp Voltage Output-OFF Current Input Threshold Voltage Protection Circuit Operating Input Voltage Drain-to-Source ON Resistance Input Current (Output On) Over-Heat Detecting Temperature Over-Current Detecting Current Over-Current Limit (Peak) Input Clamp Voltage Symbol VDS, clamp IDSS1 IDSS2 VIN(th) VIN(opr) RDS(on) IIN Tj(sd) Is ILMT VIN, clamp Conditions VIN=0V, IO=1mA VIN=0V, VDS=50V VIN=0V, VDS=12V VDS=5V, IO=1mA VIN=5V, IO=1A VIN=5V VIN=5V, IO=1A VIN=5V VIN=5V IIN=1mA 120 3.0 3.0 10 Ratings min 60 10 5 1.0 4 0.3 150 6.0 6.0 1.5 2.0 10 0.4 0.6 190 9.0 9.0 typ max Unit V μA μA V V Ω mA °C A A V Notes : 1. Overcurrent protection circuit limits the output current to the range of overcurrent limit value. 2. During overheat protecting operation, output current is turned off. 0.5 RDS(on) -- Ta IO=1A 1.0 RDS(on) -- VIN IO=1A 0.4 Drain-to-Source ON Resistance, RDS(on) -- Ω 4V 0.3 Drain-to-Source ON Resistance, RDS(on) -- Ω 5V 0.8 0.6 6V 0.2 0.4 Ta=85°C 0.1 0.2 25°C --40°C 0 --50 0 --25 0 25 50 75 100 IT05233 1.4 0 2 4 6 8 10 12 IT05234 Ambient Temperature, Ta -- °C 0.12 IIN -- Ta VIN=5V Input Voltage, VIN -- V IIN -- VIN Ta=25°C 0.10 1.2 Input Current, IIN -- mA Input Current, IIN -- mA 1.0 0.08 0.8 0.06 ( I IN 0.6 or abn ma l) 0.04 0.4 0.02 0.2 IIN(normal) 0 --50 0 --25 0 25 50 75 100 IT05235 0 2 4 6 8 10 IT05236 Ambient Temperature, Ta -- °C Input Voltage, VIN -- V No.7437-2/5 TND027SW 9 IS -- Ta Overcurrent Detecting Current, IS -- A 9 IS -- VIN Ta=25°C Overcurrent Detecting Current, IS -- A 8 8 7 7 6V 5V 6 4V 6 5 5 4 4 3 --50 3 --25 0 25 50 75 100 IT05237 12 4 5 6 7 8 9 10 IT05238 Ambient Temperature, Ta -- °C 9 ILMT -- Ta 6V Input Voltage, VIN -- V ILMT -- VIN Ta=25°C Overcurrent Limit, ILMT -- A Overcurrent Limit, ILMT -- A 50 75 100 IT05239 13 8 10 7 5V 8 4V 6 6 5 4 4 2 3 --50 0 --25 0 25 4 5 6 7 8 9 10 IT05240 Ambient Temperature, Ta -- °C Drain-to-Source Clamp Voltage, VDS, Clamp -- V 70 VDS, clamp -- Ta Input Clamp Voltage, VIN, Clamp -- V VIN=0V IO=1mA Input Voltage, VIN -- V VIN, clamp -- Ta IIN=1mA 68 12 66 64 11 62 10 60 9 58 56 --50 --25 0 25 50 75 100 IT05241 8 --50 --25 0 25 50 75 100 IT05242 Ambient Temperature, Ta -- °C 2.0 Ambient Temperature, Ta -- °C 2.0 VIN(th) -- Ta VDS=5V IO=1mA IO -- VIN VDS=24V 1.8 1.6 Threshold Voltage, VIN(th) -- V 1.8 Output Current, IO -- A 1.2 1.0 0.8 0.6 0.4 0.2 1.2 1.0 0.8 --50 0 --25 0 25 50 75 100 IT05243 1 2 3 IT05244 Ambient Temperature, Ta -- °C Input Voltage, VIN -- V --40° C 1.4 Ta= 8 5°C 25°C 1.6 1.4 No.7437-3/5 TND027SW Overheat Detecting Temperature, Tj(sd) -- °C 160 158 156 154 152 150 148 146 144 142 140 4.0 4.5 5.0 5.5 6.0 IT05245 1.8 1.7 1.6 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 --40 Tj(sd) -- VIN Allowable Power Dissipation, PD(Circuit2) -- W 1.4 1.3 1.2 PD(Circuit2) -- PD(Circuit1) Allowable Power Dissipation, PD -- W When mounted on ceramic substrate (1200mm2×0.8mm) Input Voltage, VIN -- V PD -- Ta Total Dissipation 1unit 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.3 1.5 --20 0 20 40 60 80 100 IT05248 Allowable Power Dissipation, PD(Circuit1) -- W IT05247 Ambient Temperature, Ta -- °C Sample Application Circuit AC24V AC100V Lamp OUT Lamp Lamp TND027SW GND IN 5V 5V Microcontroller Microcontroller OUT 1 IN 1 TND027SW OUT 2 IN 2 5V Microcontroller GND 1, 2 Another Sample Application Circuit (Solenoid drive) AC24V AC100V Solenoid OUT OUT 1 IN 5V 5V MicroMicrocontroller controller IN 1 Solenoid OUT 2 IN 2 5V Microcontroller TND027SW GND TND027SW GND 1, 2 No.7437-4/5 TND027SW Operation Description • The output power MOSFET will be turned on when the input voltage exceeds the input threshold voltage (4 to 6V is recommended), and then the lamp will be turned on by the current flowing to the lamp. Conversely, the output power MOSFET will be turned off when the input voltage goes below the input threshold voltage, and the lamp will be turned off. • The inrush current that occurs during normal lamp operation is limited to a preset value by the built-in overcurrent protecting circuit, which makes the lamp life longer. • The internal overcurrent protection function limits the current of output power MOSFET when output current of at least the overcurrent detecting current value flows at load short. Besides, if the device temperature exceeds the allowable power dissipation, overheat protection function protects the power switch from being broken down by turning off the current of output power MOSFET when Tj comes to 150°C (typical). • As an example of application circuit, DC voltage can also be controlled as a solenoid drive. Addition • The diode between OUT and GND in the block diagram is parasitic diode of the MOSFET. • Not apply a voltage on IN terminal during the period when OUT voltage is lower then GND voltage when driving a solenoid or a motor. • Be sure connect a diode between OUT terminal and GND terminal when you want to apply a voltage on IN terminal under the above-stated state (that is, OUT Voltage < GND Voltage). Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2011. Specifications and information herein are subject to change without notice. PS No.7437-5/5
TND027SW_11
1. 物料型号: - Ordering number: EN7437C

2. 器件简介: - 该器件是SANYO Semiconductors生产的ExPD(Excellent Power Device)系列的低侧电源开关,适用于灯、继电器和电机驱动应用。 - 特点包括内置N沟道MOSFET、过热保护(自恢复型)、过流保护(自恢复型电流限制功能)和过压保护。

3. 引脚分配: - 封装类型为SOP8,遵循JEITA, JEDEC标准SC-87, SOT-96。 - 最小包装数量为1,000 pcs./reel。

4. 参数特性: - 绝对最大额定值包括:漏源电压VDS为60V,输出电流IO(DC)为1.5A,输入电压VIN为-0.3到+10V,允许功耗PD为1.3W(安装在1200mmx0.8mm陶瓷基板上),工作电源电压Vps(opr)为40V,工作温度Topr为-40到+85°C,结温Tj为150°C,存储温度Tstg为-55到+150°C。

5. 功能详解: - 当输入电压超过输入阈值电压(推荐4到6V)时,输出功率MOSFET将被打开,并通过流向灯的电流点亮灯。相反,当输入电压低于输入阈值电压时,输出功率MOSFET将被关闭,灯将熄灭。 - 内置的过流保护电路限制了正常灯操作期间产生的浪涌电流,延长了灯的使用寿命。 - 内部过热保护功能在设备温度超过允许功耗时,通过关闭输出功率MOSFET的电流来保护电源开关,防止因结温达到150°C(典型值)而导致损坏。

6. 应用信息: - 除了作为灯驱动外,该器件还可以用于控制直流电压作为继电器驱动。

7. 封装信息: - 封装类型为SOP8,遵循JEITA, JEDEC标准SC-87, SOT-96。
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