TND313S

Ordering number : ENA0418 TND313S SANYO Semiconductors DATA SHEET ExPD (Excellent Power Device) TND313S Features • • • • • • • • General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive, Switching Power Supply, and DC / DC Converter Applications Inverter buffer. Monolithic structure (High voltage CMOS process adopted). Withstand voltage of 25V is assured. Wide range of operating voltage : 4.5V to 25V. Peak outpout current : 2A. Fast switching time (25ns typical at 1000pF load). Fully compatible input to TTL / CMOS. (VIH=not more than 2.6V, at VDD=4.5 to 25V) Built-in input pull-down resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Supply Voltage Input Voltage Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDD VIN PD max Tj Tstg Conditions Ratings 0 to 25 GND--0.3 to VDD+0.3 0.3 --55 to +150 --55 to +150 Unit V V W °C °C Recommended Operating Conditions at Ta=25°C Parameter Operating Supply Voltage Operating Temperature Symbol VDD Topr Conditions Ratings 4.5 to 25 --40 to +125 Unit V °C Electrical Characteristics (AC Characteristics) at Ta=25°C, VDD=18V, VIN=5V Parameter Turn-On Rise Time Turn-Off Fall Time Delay Time Symbol tr tf tD1 tD2 CL=1000pF CL=1000pF CL=1000pF CL=1000pF Conditions Ratings min typ 20 25 30 45 max 35 40 45 60 Unit ns ns ns ns Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D0606IP TI IM TB-00001539 No. A0418-1/5 TND313S Electrical Characteristics (DC Characteristics) at Ta=25°C, VDD=4.5 to 25V Parameter Logic “1” Input Voltage Logic “0” Input Voltage Logic “1” Input Bias Current Logic “0” Input Bias Current High Level Output Voltage Low Level Output Voltage VDD Supply Current Output High Short Circuit Pulse Current Output Low Short Circuit Pulse Current Output On Resistance Symbol VIH VIL IIN+ IIN-VOH VOL Isupp IO+ IO-ROUT VIN=VDD=25V VIN=0V or VDD IO=0A IO=0A VDD=10V, VIN=3V, (both inputs) VDD=10V, VIN=0V, (both inputs) VDD=18V, PW≤10µs, VOUT=0V VDD=18V, PW≤10µs, VOUT=18V VDD=18V, Iload=10mA, VOUT=“H” VDD=18V, Iload=10mA, VOUT=“L” --1 VDD--0.1 0.1 1.0 2.0 2.0 4 3 6 5 4.5 0.2 20 Conditions Ratings min 2.6 0.8 55 1 typ max Unit V V µA µA V V mA mA A A Ω Ω Package Dimensions unit : mm (typ) 7005-007 8 5 0.3 4.4 6.0 0.2 1 4 0.43 5.0 1 : NC 2 : IN A 3 : GND 4 : IN B 5 : OUT B 6 : VDD 7 : OUT A 8 : NC SANYO : SOP8 0.595 1.27 Block Diagram VDD 0.1 1.5 1.8 MAX IN INVERTING OUT NON-INVERTING GND No. A0418-2/5 TND313S Switching Time Measuring Circuit VDD=18V 4.7µF 0.1µF TND313S INPUT A OUTPUT A 1000pF OUTPUT B 1000pF INPUT B INPUT RISE AND FALL TIMES=5ns +5V 10% tD1 +18V INPUT 90% +0.4V tD2 90% 10% 10% tr INVERTING OUTPUT 0V 90% tf tD1 +18V NONINVERTING OUTPUT 0V 10% tr 90% tD2 90% 10% tf 50 tr -- Tc VDD=18V VIN=5V CL=1000pF 50 tr -- VDD VIN=5V CL=1000pF Turn-On Rise Time, tr -- ns Turn-On Rise Time, tr -- ns 40 40 30 30 20 20 10 10 0 --50 0 --25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 IT03751 Case Temperature, Tc -- °C 50 IT03750 50 tf -- Tc VDD=18V VIN=5V CL=1000pF Turn-Off Fall Time, tf -- ns Supply Voltage, VDD -- V tf -- VDD VIN=5V CL=1000pF Turn-Off Fall Time, tf -- ns 40 40 30 30 20 20 10 10 0 --50 0 --25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 IT03753 Case Temperature, Tc -- °C IT03752 Supply Voltage, VDD -- V No. A0418-3/5 TND313S 50 tD1 -- Tc VDD=18V VIN=5V CL=1000pF Delay Time, tD1 -- ns 100 tD1 -- VDD VIN=5V CL=1000pF 40 80 Delay Time, tD1 -- ns 30 60 20 40 10 20 0 --50 0 --25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 IT03764 Case Temperature, Tc -- °C 100 IT03763 200 tD2 -- Tc VDD=18V VIN=5V CL=1000pF Delay Time, tD2 -- ns Supply Voltage, VDD -- V tD2 -- VDD VIN=5V CL=1000pF 80 Delay Time, tD2 -- ns 150 60 100 40 50 20 0 --50 0 --25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 IT03757 Case Temperature, Tc -- °C 4 IT03756 4 IO(+) -- Tc VDD=18V Output "Low" Short Circuit Pulsed Current, IO(--) -- A Supply Voltage, VDD -- V IO(--) -- Tc VDD=18V Output "High" Short Circuit Pulsed Current, IO(+) -- A 3 3 2 2 1 1 0 --50 --25 0 25 50 75 100 125 150 0 --50 --25 0 25 50 75 100 125 150 Case Temperature, Tc -- °C 3.5 IT03758 0.40 Case Temperature, Tc -- °C IT03759 IO(±) -- VDD Allowable Power Dissipation, PD -- W PD -- Ta 3.0 VIN=5V CL=10µF 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 Output High/Low Short Circuit Pulsed Current, IO(±) -- A 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 IT11081 0 20 40 60 80 100 120 140 160 Supply Voltage, VDD -- V Ambient Temperature, Ta -- °C IT03760 No. A0418-4/5 TND313S Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No. A0418-5/5